DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 8

Technical content

CMOS Omnipolar High Sensitivity Micropower Hall Switch 1 V3.10 Nov 1, 201 3 Packages Features and Benefits 3 pin SOT23 (suffix SO) 3 pin SIP (suffix UA) – Operation down to 2.5V – Micropower consumption for battery powered applications – High sensitivity for direct reed switch replacement applications – Omnipolar, output switches with absolute value of North or South pole from magnet Functional Block Diagram Application Examples – Solid-state switch – Handheld Wireless Handset Awake Switch – Lid close sensor for battery powered devices – Magnet proximity sensor for reed switch replacement in low duty cycle applications General Description The SS239 Omnipolar Hall effect sensor IC is fabr i- cated from mixed signal CMOS technology. It incor- porates advanced chopper-stabilization techniques to provide accurate and stable magnetic switch points. The circuit design provides an internally controlled clocking mechanism to cycle power to the Hall element and analog signal processing circuits. This serves to place the high current -consuming portions of the circuit into a “Sleep” mode. Periodically the device is “Awakened” by this internal logi c and the magnetic flux from the Hall element is evaluated against the predefined thresholds. If the flux density is above or below the BOP/BRP thresholds then the output transistor is driven to change states accordingly. While in the “Sleep” cycle the output transistor is latched in its previous state. The design has been optimized for service in applications requiring extended operating lifetime in battery powered systems. The output transistor of the SS239 will be latched on (BOP) in the presence of a su fficiently strong South or North magnetic field facing the marked side of the package. The output will be latched off (BRP) in the absence of a magnetic field. VDD OUT Sleep/Awake Logic Chopper Hall Plate GND

CMOS Omnipolar High Sensitivity Micropower Hall Switch 2 V3.10 Nov 1, 201 3 Typical Application Circuit SEC's pole-independent sensing technique allows for operation with either a north pole or south pole magnet or i- entation, enhancing the manufacturability of the device. The state -of-the-art technology provides the same output polarity for either pole face. It is strongly recommended that an external bypass be connected (in close proximity to the Hall sensor) between the supply and ground of the device to reduce both external noise and noise generated by the chopper-stabilization technique. This is especially true due to the relatively high impedance of battery supplies. Internal Timing Circuit Awake Taw: 175μs Period Sleep Tsl: 70ms Time Current Isp Iaw Iavg Sample & Output Latched

CMOS Omnipolar High Sensitivity Micropower Hall Switch 3 V3.10 Nov 1, 201 3 Pin Definitions and Descriptions SOT Pin № SIP Pin № Name Type Function 1 1 VDD Supply Supply Voltage pin 2 3 OUT Output Open Drain Output pin 3 2 GND Ground Ground pin Absolute Maximum Ratings Parameter Symbol Value Units Supply Voltage (operating) VDD 6 V Supply Current IDD 5 mA Output Voltage VOUT 6 V Output Current IOUT 5 mA Operating Temperature Range TA -40 to 85 °C Storage Temperature Range TS -50 to 150 °C ESD Sensitivity - 4000 V Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute -maximum-rated conditions for extended periods may affect device reliability. DC Operating Parameters: TA = 25°C, VDD= 2.75V. Parameter Symbol Test Conditions Min Typ Max Units Supply Voltage VDD Operating 2.5 3 5.5 V Supply Current IDD Average 5 µA Output Current IOUT 1.0 mA Saturation Voltage VSAT IOUT = 1mA 0.4 V Awake mode time TAW Operating 175 µs Sleep mode time TSL Operating 70 ms

CMOS Omnipolar High Sensitivity Micropower Hall Switch 4 V3.10 Nov 1, 201 3 Magnetic Characteristics Operating Parameters: TA = 25°C, VDD = 2.75VDC Parameter Symbol Min Type Max Units Operating Point BOP - +/-35 +/-60 Gs Release Point BRP +/-5 +/-21 - Gs Hysteresis BHYST - 14 - Gs ESD Protection Human Body Model (HBM) tests according to: Mil. Std. 883F method 3015.7 Parameter Symbol Limit Values Unit Notes Min Max ESD Voltage VESD ±4 kV Magnetic Flux (Gauss) ON BOPS BRPS BOPN BRPN OFF Output Voltage (V) 0 40 20 60 80 -60 -80 -40 -20 3.0 2.0 1.5 1.0 0.5 2.5

CMOS Omnipolar High Sensitivity Micropower Hall Switch 5 V3.10 Nov 1, 201 3 Performance Characteristics Unique Features CMOS Hall IC Technology The chopper stabilized amplifier uses switched capacitor techniques to eliminate the amplifier offset voltage, which, in bipolar devices, is a major source of temperature sensitive drift. CMOS makes this advanced technique possible. The CMOS chip is also much smaller than a bipolar chip, allowing very sophisticated circuitry to be placed in less space. The small chip size also contributes to lower physical stress and less power consumption.

CMOS Omnipolar High Sensitivity Micropower Hall Switch 6 V3.10 Nov 1, 201 3 Installation Comments Consider temperature coefficients of Hall IC and magnetic, as well as air gap and life time variations. Observe te m- perature limits during wave soldering. Typical IR solder-reflow profile: – No Rapid Heating and Cooling. – Recommended Preheating for max. 2minutes at 150°C – Recommended Reflowing for max. 5seconds at 240°C ESD Precautions Electronic semiconductor products are sensitive to Electro Static Discharge (ESD). Always observe Electro Static Discharge control procedures whenever handling semiconductor products.

CMOS Omnipolar High Sensitivity Micropower Hall Switch 7 V3.10 Nov 1, 201 3

Package Information

Package UA, 3-Pin SIP: 4.0 ± 0.01 1.27 2.13 1.87 1.00 1.20 45° ± 1° 1.52 ± 0.1 3° ± 1° 0.75 ± 0.05 3.0 ± 0.01 0.44± 0.01 0.05 ± 0.05 1.6.± 0.1 0.84(Nom) 3° ± 1° 6° ± 1° 6° ± 1° 3° ± 1° 14 .5 ± 1 Active Area Depth: Sensor Location Notes: 1). Controlling dimension : mm ; 2). Leads must be free of flash and plating voids ; 3). Do not bend leads within 1 mm of lead to package interface ; 4). PINOUT: Pin 1 V DD Pin 2 GND Pin 3 Output 0.39± 0.01 0.38 ± 0.01 2.54

CMOS Omnipolar High Sensitivity Micropower Hall Switch 8 V3.10 Nov 1, 201 3 Package SO, 3-Pin SOT-23:

Ordering Information

Part No. Pb-free Temperature Code Package Code Packing SS239ESOT YES -40°C to 85°C SOT-23 7-in. reel, 3000 pieces/reel SS239EUA YES -40°C to 85°C TO-92 Bulk, 1000 pieces/bag SS239KSOT YES -40°C to 125°C SOT-23 7-in. reel, 3000 pieces/reel SS239KUA YES -40°C to 125°C TO-92 Bulk, 1000 pieces/bag SS239LSOT YES -40°C to 150°C SOT-23 7-in. reel, 3000 pieces/reel SS239LUA YES -40°C to 150°C TO-92 Bulk, 1000 pieces/bag 0.56 0.66 0.95 1.50 Chip Bottom View of SOT-23 Package 2.70 3.10 1.00 1.30 0.70 0.90 0.00 0.10 0.35 0.50 0.10 0.25 0.20 Min 2.60 3.00 1.50 1.80 1.70 2.10 2 1 Top Side Vie End Notes 1). PINOUT: Pin 1 VDD Pin 2 Output Pin 3 GND 2). All dimensions are in millimeters;