SS12-G COMCHIP | Alldatasheet
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Reverse Voltage: 20~100 Volts Forward Current: 1.0 Amp SS12-G THRU SS110-G SMD Schottky Barrier Rectifier “-G” suffix designates RoHS compliant Version Parameter Max. Repetitive Peak Reverse Voltage Max. DC Blocking Voltage Max. RMS V oltage Peak Surge Forward Current 8.3ms single half sine-wave superimposed on rate load ( JEDEC method ) Max. Average Forward Current Max. Instantaneous Forward Current at 1.0 A Max. DC Reverse Current at Rated DC Blocking Voltage Ta=25 Ta=100 Max. Thermal Resistance (Note 1) Operating Junction T emperature Storage T emperature Symbol VRRM VDC VRMS IFSM I o V F I R R JA R JL T j TSTG Unit V V V A A V mA C/W SS12-G SS14-G SS16-G SS18-G SS110-G 100 100 1.0 0.50 0.850.70 -50 to +125 0.5 -65 to +150 5 10 C C C C Dimensions in inches and (millimeters) 0.008(0.20) 0.004(0.10) 0.067(1.70) 0.051(1.29) 0.091(2.31) 0.067(1.70) 0.059(1.50) 0.035(0.89) 0.11 0(2.79 ) 0.086(2.18) 0.180(4.57) 0.160(4.06) 0.012(0.31) 0.006(0.15) 0.209(5.31) 0.185(4.70) DO-214AC (SMA)
SMD Schottky Barrier Rectifier Rating and Characteristic Curves (SS12-G Thru SS110-G) Fig. 1 - Reve rse Characteristics Percent of Rated Peak Reverse V oltage (%) Reverse Current ( mA ) Fig. 4 - Current Derating Curve 0.6 1.2 16020 40 60 80 100 120 140 Average Forward Current ( A ) 0 20 40 60 80 100 120 140 160 180 200 Forward Current ( A ) Forward Voltage (V) Fig.2 - Forward Characteristics 0.01 0.1 1.0 10 100 Fig. 3 - Junc tion Capacitance Reverse Voltage (V) Junction Capacitance (pF) 100 150 350 0.2 0.4 1.0 0.8 300 250 200 Peak surge Forward Current ( A ) Fig. 5 - Non re petitive forward surge current 1 5 10 50 1 00 Number of Cycles at 60Hz 100 0.1 0.01 100 0.1 0.01 Tj=75 C Tj=25 C Tj=25 C Pulse width 300uS 4% duty cycle CDBA120-140 CDBA160-1100 Tj=25 C Ambient T emperature ( C) 8.3mS Single Half Sine Wave JEDEC methode CDBA180-1100 CDBA160 =1MHz and applied 4VDC reverse voltage CDBA120-140