CMBA06CP02A06K-HF COMCHIP | Alldatasheet

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  • Leadless SMD package featuring a MOSFET and Schottky diode. CMBA06CP02A06K-HF REV:A Page 1QW-G5012 MOSFET Maximum Ratings (at TA=25°C unless otherwise noted) Drain-source voltage Gate-source voltage SymbolParameter VDS VGS Value Unit V V PD mW RθJA °C/W -20 Operating junction and storage temperature range TJ, TSTG -55 to +150 Power dissipation 600 Thermal resistance, junction to ambient @TA=25°C 182 Continuous drain current ID -900 mA DFN06P/DFN1010 Dimensions in inches and (millimeter) 0.041(1.05) 0.037(0.95) 0.041(1.05) 0.037(0.95) 0.022(0.55) 0.018(0.45) 0.014(0.35) 1 2 3 456 0.015(0.37) 0.011(0.27) 0.008(0.20) 0.004(0.10) 0.008(0.20) 0.004(0.10) 0.014(0.35) 0.010(0.25) 0.021(0.53) 0.028(0.70) Pin 1 Mechanical data - Case: DFN06P/DFN1010 package, molded plastic. - Mounting position: Any. Schottky Maximum Ratings (at TA=25°C unless otherwise noted) SymbolParameter Value Unit 500 V VR IO Repetitive peak reverse voltage Reverse voltage Average forward rectified current VRRM V mA - lower component placement and inventory costs along with board space saving. 4IFSM Forward current surge peak 8.3ms single half sine-wave superimposed on rate load (JEDEC method) A °COperating junction temperature range TJ -55 to +125 Storage temperature range °CTSTG -55 to +150 Circuit Diagram 1 2 3 456 P-Channel MOSFET Schottky D D SG A C C - A : Anode - C : Cathode - G : Gate - S : Source - D : Drain - Human body model (HBM) 3kV - Charge device model (CDM) 1kV - ESD protection. N/A

Comchip Technology CO., LTD. Page 2 REV:A Schottky Electrical Characteristics (at TA=25°C unless otherwise noted) SymbolParameter Conditions Min MaxTyp Unit Forward voltage Reverse current Junction capacitance VF IR CJ IF = 500mA VR = 10V VR = 40V 500 mV µA µA pFVR = 0V, f = 1MHz 88 IF = 100mA 380 mV MOSFET and Schottky Diode QW-G5012 SymbolParameter Conditions Min MaxTyp Unit Drain-source breakdown voltage BVDSS Gate threshold voltage VGS(th) Gate leakage current V RDS(on)Drain source on-state resistance VDrain forward voltage Reverse transfer capacitance Input capacitance Coss Crss Output capacitance Ciss pF Dynamic Characteristics Static Electrical Characteristics IGSS V µA VSD VGS = 0V, ID = -250µA -20 ±10 VDS = VGS, ID = -250µA VGS = 0V, IS = -300mA -1.2 VDS = -10V, VGS = 0V, f = 1MHz VGS = ±8V, VDS = 0V -0.4 -1.0 580 -0.4 VGS = -2.5V, ID = -500mA 720 Zero gate voltage drain current IDSS µAVDS = -16V, VGS = 0V -1 VGS = -4.5V, ID = -500mA VGS = -1.8V, ID = -100mA VGS = -1.5V, ID = -50mA VGS = -1.2V, ID = -10mA 1050 1350 mΩ 2100 448 574 696 840 1230

Comchip Technology CO., LTD. Page 3 Fig.1 - On-Region Characteristics Drain to Source Voltage, -VDS (V) Drain Current, -ID (mA) 500 0 1 2 3 4 5 Fig.2 - Transfer Characteristics Gate to Source Voltage, -VGS (V) Drain Current, -ID (A) 0 2 Fig.3 - On-Resistance vs. Drain Current Gate Voltage Drain Source On-Resistance, RDS(on) (Ω) 0 200 600400 Fig.4 - On-Resistance Variation with Temperature Junction Temperature, TJ (°C) Drain Source On-Resistance, RDS(on) (Ω) 25 50 75 100 150 Fig.5 - On-Resistance vs. Tate Source Voltage Gate to Source Voltage, -VGS (V) Drain Source On-Resistance, RDS(on) (mΩ) 2 4 6 Fig.6 - Diode Forward Voltage vs. Current Source to Drain Voltage, -VSD (V) Source Current, -IS (mA) 0.1 2000 100 0 0.2 0.6 1.0 1.2 Drain Current, -ID (mA) 125 1000 VDS= -5V 1000 600 200 0.4 0.8 MOSFET Typical Rating and Characteristic Curves (CMBA06CP02A06K-HF) ID= -500mA 1500 2000 25°C 1 3 REV:A 125°C MOSFET and Schottky Diode 400 800 1.5 1.0 2.0 0.5 1000 QW-G5012 VGS= -1.5V VGS= -1.8V VGS= -1.2V VGS= -2.5V -4.5V 1.5 1.0 2.5 0.5 2.0 VGS= -4.5V VGS= -2.5V VGS= -1.8V VGS= -1.5V VGS= -1.2V 1.5 1.0 0.5 2.0 VGS= -4.5V, ID= -500mA VGS= -2.5V, ID= -500mA VGS= -1.8V, ID= -100mA VGS= -1.5V, ID= -50mA VGS= -1.2V, ID= -10mA 800 25°C 125°C 25°C 125°C 150°C

Comchip Technology CO., LTD. Page 4 Fig.7 - Gate Threshold Variation vs. Ambient Temperature Temperature, (°C) Gate Threshold Voltage, -VGS(th) (V) 1.0 25 50 75 100 150125 Fig.8 - Breakdown Voltage vs. Temperature Drain to Source Voltage, -BVDSS (V) Fig.9 - Capacitance of Diodes Drain-Source Voltage, -VDS (V) Capacitance of Diodes, (pF) 0 1510 20 Coss Crss 25 50 75 100 150125 Ciss ID=250µA Temperature, (°C) REV:A ID=250µA 0.8 0.6 0.4 0.2 MOSFET and Schottky Diode QW-G5012 MOSFET Typical Rating and Characteristic Curves (CMBA06CP02A06K-HF)

Comchip Technology CO., LTD. Page 5 REV:A Schottky Typical Rating and Characteristic Curves (CMBA06CP02A06K-HF) MOSFET and Schottky Diode 0 10 20 Fig.12 - Typical Capacitance Between Terminals Characteristics Reverse Voltage, (V) Capacitance Between Terminals, (pF) 0 0.2 0.4 10 200 Fig.11 - Reverse Characteristics Reverse Voltage, (V) Reverse Current, (µA) Fig.10 - Forward Characteristics Forward Voltage, (V) Forward Current, (mA)1 100 0.1 1000 0.1 0.3 100 1000 0.5 125°C 10000 100000 TJ=25°C 50°C 75°C 100°C 125°C 150 100°C TJ=25°C 75°C 50°C QW-G5012 120 150°C 150°C

Comchip Technology CO., LTD. Page 6 Reel Taping Specification Trailer Device Leader 400mm (min)160mm (min) Direction of Feed Index hole o 120 DFN06P/ DFN1010 DFN06P/ DFN1010 1.13 ± 0.05 0.044 ± 0.002 0.044 ± 0.002 0.026 ± 0.002 1.50 + 0.10 − 0.00 0.059 + 0.004 − 0.000 178.00 ± 1.00 7.008 ± 0.039 60.00 ± 0.50 2.362 ± 0.020 0.531 ± 0.008 13.50 ± 0.20 SYMBOL (mm) (inch) (inch) (mm) SYMBOL A B C d D D1 W W1E F P TP1P0 − 0.10 0.315 + 0.012 − 0.001 12.00 + 0.50 − 0.00 0.472 + 0.020 − 0.000 A B C d DD1D2 W E F P T REV:A M06K MOSFET and Schottky Diode QW-G5012

Comchip Technology CO., LTD. Page 7 CMBA06CP02A06K-HF Marking Code .M06K Part Number Marking Code Standard Packaging Case Type 5,000 REEL ( pcs ) Reel Size (inch) Case Type REEL PACK DFN06P /DFN1010 M06K Suggested P.C.B. PAD Layout SIZE (inch)(mm) 0.85 0.35 0.35 0.35 0.20 0.033 0.014 0.014 0.014 0.008 A B C D E DFN06P /DFN1010 A B C D E REV:A MOSFET and Schottky Diode QW-G5012