SS1003EJ

SS1003EJ SANYO | Alldatasheet

Document overview

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Technical content

Features

• Low switching noise.
• Low forward voltage (IF=500mA, V F max=0.39V) (IF=1A, VF max=0.45V).
• Ultraminiature (1608 size) and thin (0.6mm) leadless package. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Repetitive Peak Reverse Voltage V RRM 30 V Nonrepetitive Peak Reverse Surge Voltage VRSM 35 V Average Output Current I O 1A Surge Forward Current I FSM 50Hz sine wave, 1 cycle 5 A Junction Temperature Tj - -55 to +125 °C Storage Temperature Tstg - -55 to +125 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Reverse Voltage V R IR =500µA3 0 V Forward Voltage VF1I F=500mA 0.39 V VF2I F=1A 0.45 V Reverse Current I R VR =15V 360 µA Interterminal Capacitance C V R =10V, f=1MHz 27 pF Reverse Recovery Time t rr IF=IR =10mA, See specified Test Circuit. 10 ns Thermal Resistance Rth(j-a) Mounted on a ceramic board (600mm25 0.8mm) 165 °C / W Marking : DH TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN O1806 SY IM TC-00000252 / N3004 TS IM TB-00000946 Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. SANYO Semiconductors DATA SHEET SS1003EJ Schottky Barrier Diode 30V, 1A Rectifier

No.8157-2/3 0 0.1 IT07939 IF -- VF Forward Current, IF -- A Forward V oltage, VF -- V 100 40 IT07940 IR -- VR Reverse Current, IR -- µA Reverse V oltage, VR -- V 0.001 0.01 0.1 1.0 0.2 0.3 0.4 0.5 1.0 100 1000 10000 20 30 Ta=125 100 °C 75°C 50°C °C --25 Ta=125°C 100°C 75°C 50°C 25°C --25°C Package Dimensions unit : mm (typ) 7033A-001 Type No. Indication (Top view) Electrical Connection (Top view)trr Test Circuit 1 : Cathode 2 : Cathode 3 : Anode 4 : Anode SANYO : ECSP1608-4 0.6 0.025 0.5 0.2 1.2 0.3 Bottom View Top View 1.6 0.8 Polarity Discriminating Mark Duty≤10% 50Ω 100Ω 10Ω --5V trr 10µs 10mA10mA 1mA DH Cathode mark (Top) Cathode mark (Top) *Electrodes : on the bottom Anode Anode Cathode Cathode

No.8157-3/3 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. PS IT08214 0.4 0.4 0.3 0.2 0.6 0.5 0.1 (1) (2)(4) (3) IT08215 100 120 140 360° θ 360° PF(AV) -- IO Average Output Current, IO -- A Average Forward Power Dissipation, PF(A V) -- W Rectangular wave (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° Sine wave (1) (2)(4) (3) Average Output Current, IO -- A Tc -- IO Case Temperature, Tc -- °C 1.00.1 100 723 5 10723 5 100723 5 Reverse V oltage, VR -- V C -- VR Interterminal Capacitance, C -- pF IT07943 f=1MHz (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° This catalog provides information as of October, 2006. Specifications and information herein are subject to change without notice.