SRT10120L GWSEMI | Alldatasheet
Document overview
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Technical content
FEATURES
- Trench MOS Schottky barrier diodes - Low forward voltage drop - low profile - typical body height 1.1 mm - Moisture sensitivity: level 1, per J-STD-020 - High temperature soldering guaranteed: 260℃/10 seconds - RoHS Compliant - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA - Case: TO-277B - Case Material: Molding compound meets UL 94V-0 flammability rating Maximum Ratings Ta=25℃ unless otherwise noted Parameter Symbol Value Unit Repetitive Peak Reverse Voltage VRRM 120 V Average Forward Rectified Current IF(AV) 10 A Peak forward surge current (8.3 ms single half sine-wave superimposed on rated load) IFSM 220 A Operating Junction Temperature Tj 150 ℃ Storage Temperature Range Tstg -55 to +150 ℃ Electrical Characteristics Ta=25℃ unless otherwise noted Parameter Test Conditions Symbol Value Unit Forward Voltage@IF=10A Ta=25℃ VF V0.75 Reverse Current @ VRRM Ta=25℃ IR 0.5 Ta=125℃ 50 mA Typical junction capacitance 4.0 V, 1 MHz CJ 0.95 nF Typical thermal resistance juntion to ambient RθJA 27 ℃/Wjuntion to lead RθJL 3 Low Forward Voltage Schottky Rectifier SRT10120L TYPICAL APPLICATION General purpose use in ac-to dc bridge full wave rectification for SMPS, lighting, Adapter, charger, home appliance, office equipment and telecommunication dimensions in inches and (millimeters) TO-277B 0.172(4.35) 0.150(3.80) 0.085(2.15) 0.067(1.70) 0.088(2.25) 0.065(1.65) 0.243(6.15) 0.209(5.30) 0.136(3.45) 0.114(2.90) 0.043(1.10) 0.017(0.45) 0.052(1.30) 0.031(0.80) 0.262(6.65) 0.250(6.35) 0.018(0.45) 0.009(0.25) 0.047(1.2) 0.039(1.0) 0.151(3.85) 0.128(3.25) 0.026(0.65) 0.017(0.45)
Ratings and Characteristics Curves SRT10120L