S9018R GWSEMI | Alldatasheet

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Technical content

TO – 92 1.EMITTER 2.BASE 3.COLLECTOR

FEATURES

/g122High Current Gain Bandwidth Product /g48/g36/g59/g44/g48/g56/g48/g3/g53/g36/g55/g44/g49/g42/g54/g3/g11/g55 /g68 /g32/g21/g24/g1071/g3/g88/g81/g79/g72/g86/g86/g3/g82/g87/g75/g72/g85/g9 /g76/g86/g72/g3/g81/g82/g87/g72/g71/g12/g3 /g54/g92/g8 /g69/g82/g79/g3 /g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3 /g51/g68/g85/g68/g8 /g72/g87/g72/g85/g3/g57/g68/g79/g88/g72/g3/g56/g81/g76/g87/g3 /g57 /g38/g37/g5 /g3 Collector-Base Voltage 25 V /g57 /g38/g4 /g5 /g3 Collector-Emitter Voltage 18 V /g57 /g4 /g37/g5 /g3 Emitter-Base Voltage 4 V /g44 /g38 /g3 Collector Current -Continuous 0.05 A /g51 /g39 /g3 Collector Power Dissipation 400 mW /g1071 TJ,/g55/g86/g87/g74 /g3 Operation Junction and Storage Temperature Range /g53 /g537/g45/g36 /g3 /g3Thermal Resistance /g73rom Junction /g87o Ambient /g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3 /g1071/W312.5 Equivalent Circuit Plastic-Encapsulate Transistors S9018R TRANSISTOR(NPN) -SERIES /g4 /g47/g4 /g38/g55/g53/g44/g38/g36/g47/g3/g38/g43/g36/g53/g36/g38/g55/g4 /g53/g44/g54/g55/g44/g38/g54 a T =25/g1071 unless otherwise specified Parameter Symbol T est conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =100/g541A,I E =0 25 V Collector-emitter breakdown voltage V (BR)CEO I C =0.1mA,I B =0 18 V Emitter-base breakdown voltage V (BR)EBO I E =100/g541A,I C =0 4 V Collector cut-off current I CBO V CB =20V,I E =0 0.1 nA Collector cut-off current I CEO V CE =15V,I B =0 0.1 /g541A Emitter cut-off current I EBO V EB =3V,I C =0 0.1 /g541A DC current gain h FE V CE =5V, I C =1mA 28 270 Collector-emitter saturation voltage V CE(sat) I C =10mA,I B =1mA 0.5 V Base-emitter saturation voltage V BE(sat) I C =10mA,I B =1mA 1.42 V Transition frequency f T V CE =5V,I C =50mA,f=400MHz 800 MHz CLASSIFICATION OF h FE RANK D E F G H I J RANGE 28-45 39 -60 54 -80 72 -108 97 -146 132 -198 180 -270

TRANSISTOR(NPN) -SERIES Typical Characteristics 0 25 50 75 100 125 150 0.0 0.1 0.2 0.3 0.4 0.5 11 0 0.01 0.1 0.1 11 0 0.4 0.6 0.8 1.0 11 0 120 160 11 0 200 400 600 800 1000 1200 0.1 0.1 02 468 1 0 P C —— T a COLLECTOR POWER DISSIPATION P C (W) AMBIENT TEMPERATURE T a ( ) ć /g533=10 V CEsat — — I C T a =25 ć T a =100 ć COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (V) COLLECTOR CURRENT I C (mA) 0.3 /g533=10 I C V BEsat T a =100 ć T a =25 ć BASE-EMITTER SATURATION VOLTAGE V BEsat (V) COLLECTOR CURRENT I C (mA) 5050 COMMON EMITTER V CE =5V T a =25 ć T a =100 ć I C h FE DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) 10 20 V CE =5V T a =25 ć I C f T — — TRANSITION FREQUENCY f T (MHz) COLLECTOR CURRENT I C (mA) f=1MHz I E =0 / I C T a =25 ć V CB / V EB C ob / C ib C ob C ib CAPACITANCE C (pF) REVERSE VOLTAGE V (V) I C COMMON EMITTER V CE =5V COLLECTOR CURRENT I C (mA) BASE-EMITTER VOLTAGE V BE (V) T a =100 ć T a =25 ć V BE COMMON EMITTER T a =25 ć COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE V CE (V) I B =10uA Static Characteristic 100uA 90uA 80uA 70uA 60uA 50uA 40uA 30uA 20uA

TRANSISTOR(NPN) -SERIES TO-9 PACKAGE OUTLINE /g48/g76/g81/g48/g68/g91/g48/g76/g81/g48/g68/g91 A 3.300 3.700 0.130 0.146 A1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 D4 ./g22/g19/g19 4.700/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g19/g17/g20/g25/g28/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g19/g17/g20/g27/g24 D1 3.430 0.135 E 4.300 4.700 0.169 0.185 e e1 2.440 2.640 0.096 0.104 L 14.100 14.500 0.555 0.571 /g301 1.600 0.063 h 0.000 0.380 0.000 0.015 /g54/g92/g8 /g69/g82/g79/g39/g76/g8 /g72/g81/g86/g76/g82/g81/g86/g3/g44/g81/g3/g48/g76/g79/g79/g76/g8 /g72/g87/g72/g85/g86 /g39/g76/g8 /g72/g81/g86/g76/g82/g81/g86/g3/g44/g81/g3/g44/g81/g7 /g75/g72/g86 1.270 TYP 0.050 TYP