SRD00231Z SIEMENS | Alldatasheet
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Technical content
Semiconductor Group 1 02.95 Ternary PIN Photodiode in TO-Package, Central Pin SRD 00231Z
- InGaAs/InP − PIN-photodiode
- Designed for application in fiber-optic
- communication systems
- Sensitive receiver for the 2nd and 3rd optical
- window (1300nm and 1500nm)
- Suitable for bit rates up to 2.5 Gbit/s
- Low junction and low package capacitance
- Fast switching times
- Low dark current
- Low noise
- High reverse-current stability by planar structure
- Hermetically sealed 3-pin metal case with central pin Type Ordering Code Connector/Flange SRD 00231Z Q62702-Pxxxx TO with central pin Maximum Ratings Parameter Symbol Values Unit Forward current IF 10 mA Reverse voltage VR 20 V Operating and storage temperature TA; Tstg − 40 … + 85 °C Max. radiant power into the opt. port (VR = 5 V) Φ port 1 mW Soldering time (wave / dip soldering), distance between solder point and base plate ≥ 2 mm, 260 °C ts 10 s
All optical data refer to an optimally coupled 10/125 µm SM fiber. Parameter Symbol Values Unit Spectral sensitivity λ = 1300 nm, VR = 5 V Sλ 0.9 (≥ 0.8) A/W Change in spectral sensitivity in operating temperature range ΔSλ < 0.2 %/K Rise and fall time RL = 50 Ω , VR = 5 V, λ = 1310 nm, Φ port = 100 µW tr; tf 0.25 (≤ 0.4) ns Total capacitance VR = 5 V,Φ port = 0 f = 1 MHz C 5 0.7 (≤ 0.9) pF Dark current VR = 5 V, TA = 85 °C, Φ port = 0 ID 1 (≤ 50) nA Capacitance C = f(V R ) Φ port = 0, f = 1 MHz Relative Spectral Sensitivity VR = 5 V 0.1 0.1 1 10 100 Reverse Bias in V Capacitance in pF Wavelength in nm Sensitivity in A/W 0,1 0,2 0,3 0,4 0,5 0,6 0,7 0,8 0,9 800 1200 1600 2000
Dark Current IR = f(V R ) IF = f(VF) Dark Current IR = f(TA ) Φ port = 0, VR = 5 V 0.001 0.01 0.1 0 5 10 15 20 Reverse Bias in V Dark Current in nA 0.001 0.01 0.1 100 -50 0 50 100 Ambient Temperature in °C Dark Current in nA Package Outlines (Dimensions in mm) SRD 00231Z