SRD00111Z SIEMENS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

Semiconductor Group 1 02.95 Silicon PIN Photodiode in TO-Package SRD 00111Z

  • Si-PIN-photodiode
  • Designed for application in fiber-optic
  • Transmission systems
  • Sensitive receiver for the 1st window (850 nm)
  • Suitable for bit rates up to 565 Mbit/s
  • Low junction and low package capacitance
  • Fast switching times
  • Low dark current
  • Low noise
  • Hermetically sealed 3-pin metal case
  • Cathode electrically isolated from case Type Ordering Code Connector/Flange SRD 00111Z Q62702-P3019 TO, without optics Maximum Ratings Parameter Symbol Values Unit Reverse voltage VR 50 V Isolation voltage to case VR 100 V Junction temperature Tj 125 °C Storage temperature Tstg − 55 … 125 °C Soldering time (wave / dip soldering), distance between solder point and base plate ≥ 2 mm, 260 °C ts 10 s

All data refer to an ambient temperature of 25 °C. Parameter Symbol Values Unit Photosensitive area A 1 mm 2 Wavelength of max. sensitivity λSmax 850 nm Quantumn efficiency at λ = 850 nm η 0.8 Spectral sensitivity λ = 850 nm λ = 950 nm Sλ850 Sλ950 0.55 (≥ 0.45) 0.45 A/W A/W Rise and fall time RL = 50 Ω , VR = 50 V, λ = 850 nm tr; tf 1 ns Junction capacitance at f = 1 MHz VR = 0 V VR = 1 V VR = 12 V VR = 20 V C 0 C 1 C 12 C 20 3.3 pF pF pF pF 3 dB bandwidth RL = 50 Ω , VR = 50 V, λ = 850 nm fc 500 MHz Dark current VR = 20 V, E = 0 ID 1 (≤ 5) nA Noise equivalent power VR = 20 V, λ = 850 nm NEP 3.3 × 10−14 W/√Hz Detectivity VR = 20 V, λ = 850 nm D * 3.1 × 1012 cm √Hz/W Temperature coefficient Ip TC 0.2 %/K Isolation current, VIS = 100 V IIS 0.1 (≤ 1) nA

Relative Spectral Sensitivity S = S(λλ) Photocurrent Ip = Ip (E) 100 400 600 800 1000 L/[nm] Srel/[%] 0.01 0.1 100 0.001 0.01 0.1 1 10 E/[mW/cm2] Ip/[uA] Dark Current IR = IR (V R ) Dark Current IR = IR (TA ) E = 0, VR = 20 V 0.001 0.01 0.1 100 0 1 02 03 04 05 0 Vr/[V] Ir/[nA] 0.001 0.01 0.1 100 1000 -50 -25 0 25 50 75 100 Ta/[°C] Ir/[nA]

Dark Current IR = IR (V R ) Junction Capacity C = C (V R ) E = 0, f = 1 MHz 0.001 0.01 0.1 100 1000 10000 100000 01 0 2 0 3 0 Vr/[V] Ir/[nA] -10°C 0°C 25°C 50°C 75°C 100°C 125°C 0.1 1 10 100 Vr/[V] C/[pF] Dark Current IR = IR (V R ) 100 120 0 2 04 06 0 Vr/[V] Rs/[Ohm]

Package Outlines (Dimensions in mm) SRD 00111Z