SR8100 SEMTECH_ELEC | Alldatasheet
Document overview
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- PDF pages: 2
Technical content
Features
- Schottky barrier chip
- Guard ring die construction for transient protection
- High surge capability
- Low power loss, high efficiency
- High current capability, Low forward voltage drop
- For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications Mechanical Data
- Case: Molded plastic, TO-220A
- Epoxy: UL 94V-0 rate flame retardant
- Terminals: Leads solderable per MIL-STD-202, Method 208 guaranteed
- Polarity: As marked
- Mounting position: Any Maximum Ratings and Characteristics Ratings at 25 OC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load, For capacitive load, derate current by 20%. Parameter Symbols SR8100 Units Maximum Recurrent Peak Reverse Voltage V RRM 100 V Maximum RMS Voltage V RMS 70 V Maximum DC Blocking Voltage V DC 100 V Maximum Average Forward Rectified Current at TC = 25 OC I F(AV) 8 A Non-Repetitive Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) IFSM 150 A Maximum Forward Voltage at 8 A and TC = 25 OC V F 0.72 V Maximum Reverse Current Rated DC Blocking Voltage at T C = 25 OC a t T C = 125 OC IR 0.55 7 mA Typical Junction Capacitance 1) C J 350 pF Typical Thermal Resistance Junction to Case 2) RθJC 2 K/W Operating Temperature Range T J - 55 to + 150 OC Storage Temperature Range T stg - 55 to + 175 OC 1) Measured at 1 MHz and applied reverse voltage of 4 V. 2) Thermal Resistance from Junction to case mounted on heatsink.
Dated : 27/07/2007 H SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) SR8100