SR520-G COMCHIP | Alldatasheet
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Technical content
Features
-Axial lead type devices for through hole design. -Low power loss, high efficiency. -High current capability, Low forward voltage drop. -High surge capability. Mechanical Data -Case: Molded plastic, DO-201AD/DO-27 -Epoxy: UL94V-0 rate flame retardant. -Polarity: color band denoted cathode end. -Lead: Axial lead, solderable per MIL-STD-202, Method 208 guranteed. -Weight: 1.10 gram .(approx.) Dimensions in inches and (millimeter) DO-27 1.0(25.4) min. 1.0(25.4) min. 0.375(9.50) 0.285(7.20) 0.220(5.60) 0.197(5.00) 0.052(1.30) 0.048(1.20) Parameter Unit Maximum Ratings and Electrical CharacteristicsRatings at Ta=25°C unless otherwise noted. Single phase, half wave, 60Hz, resistive or inductive loaded. For capacitive load, derate current by 20% . Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Operating junction temperature range Symbol VRRM VRMS VDC TJ SR520 SR540 SR560 SR5100 SR5150 SR5200 -50 ~ +150 100 100 150 105 150 200 140 200 -50 ~ +175 V V V Forward surge current Reverse Current Storage temperature A A mA Parameter Conditions on rate load (JEDEC method) 8.3ms single half sine-wave superimposed Forward rectified current see Fig.1 Thermal Resistance Diode Junction capacitance VR =VRRM TA=25°C VR =VRRM TA=100°C f=1MHZ and applied 4V DC reverse Voltage Junction to ambient Symbol IO IFSM IR RθJA CJ TSTG IR MIN. TYP. MAX. mA °C/W pF 5.0 125 0.5 380 -50 +175 Unit ComchipS M D D i o d e S p e c i a l i s t -Guardring for overvoltage protection. -Ultra high-speed switching. -Silicon epitaxial planar chip, metal silicon junction. -Lead-free part meets environmental standards of MIL-STD-19500/228 -G-G-G Maximum instantaneous forward voltage at IF=5A,TA=25°C DIA. DIA.
RATING AND CHARACTERISTIC CURVES (SR520-G Thru. SR5200-G) Page 2 REV:A Schottky Barrier Rectifier Ambient Temperature, (°C) 3.0 4.0 7.0 1.0 6.0 2.0 5.0 Average Forward Current, (A) Fig.1 - Typical Forward Current Derating Curve Forward Voltage, (V) Fig.2 - Typical Forward Characteristics 0.1 0.01 0.1 1.0 100 Pulse Width 300us 1% Duty Cycle TJ=25°C 0.70.3 Instantaneous Forward Current, (A) Percent of Rated Peak Reverse Voltage, (%) 1206040 1000 Fig.5 - Typical Reverse Characteristics 0.01 0.1 100 Reverse Voltage, (V) 0.01 Fig.4 - Typical Junction Capacitance 400 1400 1 10 100 Number of Cycles at 60Hz Peak Forward Surge Current, (A) 150 1 10 100 120 O TJ=25 C 8.3ms single half sine wave, JEDEC method 0.1 200 800 600 1200 1000 Reverse Leakage Current , (mA) Junction Capacitance, (pF) Fig.3 - Maximum Non-repetitive Surge CurrentForward 140 ComchipS M D D i o d e S p e c i a l i s t 0 100 17525 50 75 150125 SR5150-G ~ SR5200-G SR520-G ~ SR5100-G TJ=25°C TJ=125°C SR520-G ~ SR540-G SR5100-G SR560-G SR5150-G~SR5200-G QW-BB027
REV:A Schottky Barrier Rectifier ComchipS M D D i o d e S p e c i a l i s t B Taping Specification For Axial Lead Diodes E A Z T E 90° ± 5° L H W 0.039 (max) 1.00 (max) 0.039 (max) 1.00 (max) B Z T E A SYMBOL (mm) (inch) DO-27 L W H 75.00 2.953 145.00 5.709 260.00 10.236 D 330.00 13.000 D1 D0 85.70 ± 0.30 3.374 ± 0.012 16.60 ± 0.40 0.654 ± 0.016 72.00 ± 3.00 2.835 ± 0.118 (inch) (mm)DO-27 SYMBOL Standard Packaging Case Type DO-27 500 BOX ( pcs ) AMMO PACK CARTON ( pcs ) 9,000 XX / XXX = Product type marking code SRXXX Marking Code SR52 SR54 SR56 SR510 SR515 SR520 Marking Code Part Number SR5100-G SR5150-G SR5200-G SR520-G SR540-G SR560-G QW-BB027