SR5100L HDSEMI | Alldatasheet
Document overview
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- PDF pages: 4
Technical content
Features
o 5.0A
- VRRM
- High surge current capability
Applications
- Rectifier Marking Polarity: Color band denotes cathode SR5100L DO-2 DO-27 Plastic-Encapsulate Diodes Schottky Rectifier SR5100L 100V Low Vf Electrical Characteristics (Ta=25℃ Unless otherwise specified） Item Symbol Unit Conditions SR5 Repetitive Peak Reverse Voltage V RRM V Average Forward Current I F(AV) A 60Hz Half-sine wave, 5.0 I FSM A 150 Junction Temperature T J ℃ -55~+150 Storage Temperature T STG 100 100L Resistance load, Ta= 60Hz Half-sine wave,1 cycle, Ta=25℃ Surge(Non-repetitive)Forward Current -55~+150 ℃ 100 Maximum RMS Voltage V RMS V 70 Item Symbol Unit Test Condition SR5 Peak Forward Voltage V F V Peak Reverse Current I RRM1 mA V RM RRM Ta=25℃ I RRM2 Ta=125℃ 20 Thermal Resistance(Typical) R θJ-A /W℃ Between junction and ambient 45 R θJ-L Between junction and lead 8 100L =5A Ta=25℃ 0.58(typ:0.55) I F 0.05 =2A I F =1A I F 0.45(typ:0.44) 0.40(typ:0.39)
H igh Diode Semiconductor 0 50 150 FIG.1: FORWARD CURRENT DERATING CURVE IO(A) TL( 100 25 75 125 5.0 4.0 3.0 2.0 1.0 IFSM(A) Number of Cycles FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT 150 120 1 10 100 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) 6.0 FIG.4 TYPICAL REVERSE CHARACTERISTICS Voltage(%) IR(mA) T A = 150 °C T A = 125 °C T A = 25 °C 100 0.1 0.01 0.001 0.0001 10 20 30 40 50 60 70 80 90 100 0.2 0.5 VF(V) IF(A) FIG3:Instantaneous Forward Voltage 1.0 5.0 Ta=25 0.8 0.9 1.00.10 1.1 1.2
H igh Diode Semiconductor DO-2 Unit: in inches (millimeters) MIN 0.96(24.5) MIN 0.96(24.5)
H igh Diode Semiconductor Ammo Box Packaging Specifications For Axial Lead Rectifiers