SR120 HDSEMI | Alldatasheet
Document overview
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- PDF pages: 4
Technical content
Features
o
- VRRM 20V-100V
- High surge current capability
Applications
- Rectifier Marking Polarity: Color band denotes cathode SR1XX Schottky Rectifier XX:From 20 to 100 SR120 THRU SR1100 SR1 Item Symbol Unit Conditions Repetitive Peak Reverse Voltage V RRM V Average Forward Current I F(AV) A 60Hz Half-sine wave, Resistance 1.0 Surge(Non-repetitive)Forward Current I FSM A 60Hz Half-sine wave,1 cycle, Ta=25℃ 30 Junction Temperature T J -55~+125 Storage Temperature T STG ℃ -55 ~ +150 Electrical Characteristics (Ta=25℃ Unless otherwise specified） SR1 Item Symbol Unit Test Condition Peak Forward Voltage V FM V I FM I RRM1 Ta=25℃ 0.1 Peak Reverse Current I RRM2 mA V RM RRM Ta=125℃ 10 R θJ-A Between junction and ambient 50 Thermal Resistance(Typical) R θJ-L /W℃ Between junction and lead 15 20 30 40 50 60 80 100 20 30 40 50 60 80 100 20 30 40 50 60 80 100 load, TL(Fig.1) V 14 21 28 35 42 56 70 Maximum RMS V RMS Vo ltage -55 ~ +150
H igh Diode Semiconductor IF(A) FIG.3: TYPICAL FORWARD CHARACTERISTICS TJ=25 Pulse width=300us 1% Duty Cycle 0.1 0.2 0.1 VF(V) 1.0 SR120-SR140 SR180-SR1100 SR150-SR160 FIG.4: TYPICAL REVERSE CHARACTERISTICS Voltage(%) IR(mA) Tj=25 Tj=125 Tj=75 0.001 0.01 0 20 40 60 80 100 0.1 1.0 100 0 50 150 FIG.1: FORWARD CURRENT DERATING CURVE IO(A) Single Phase Half Wave 60HZ Resistive or Inductive Load 0.375''(9.5mm) Lead Length 100 0.2 0.4 0.6 0.8 1.0 IFSM(A) Number of Cycles FIG.2 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 8.3ms Single Half Sine Wave JEDEC Method 1 2 10 20 100 SR12O-SR160 SR180-SR1100
H igh Diode Semiconductor DO-4 1 1.0(25.4) MIN .205(5.21) .166(4.22) .034(0.86) .028(0.71) DIA .107(2.72) .080(2.03) 1.0(25.4) MIN Unit: in inches (millimeters) DIA
H igh Diode Semiconductor Ammo Box Packaging Specifications For Axial Lead Rectifiers