SR1070CT DSK | Alldatasheet

Document overview

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Technical content

10.2± 0.2 ? 3.8± 0.15 2.8± 0.1 19.0± 0.5 PIN 3.5± 0.3 0.9± 0.1 2.5± 0.1 13.8± 0.5 2.6± 0.2 0.5± 0.1 8.9± 0.2 1.4± 0.2 4.5± 0.2 PIN 1 PIN 3 CASE PIN 2

FEATURES

Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS UNITS Max imum r ec ur r ent peak r ev er s e v oltage V RRM V Working peak reverse voltage V RMS V Maximum DC blocking voltage V DC V Maximum average forw ard rectified current v (See FIG.1) I F(AV) A Peak forw ard surge current 8.3 ms single half c sine-w ave superimposed on rated load c (JEDEC Method) @T J =125 I FSM A Maximum instantaneous forw ard voltage per leg c c @ 5A (Note1) V F V Maximum reverse current @T A =25 at rated DC blocking voltage @T A =100 Operating junction temperature range T J Storage temperature range T STG SR1070CT- - -SR10100CT 70 80 90 100 SR 1080CT Polarity: As marked TO-220AB DUAL SCHOTTKY RECTIFIERS -55 --- + 150 Metal-semiconductor junction with guard ring Weight: 0.08ounce, 2.24 grams SR 1090CT SR 10100CT 50.0 The plastic material carries U/L recognition 94V-0 Epitaxial construction -55 --- + 150 Note: 1. Pulse test:300us pulse width,1% duty cy cle. 56 63 mA I R 150.0 0.850.80 0.5 For use in low voltage,high frequency inverters free xxxx wheeling,and polarity protection applications Low forward voltage drop,low switching losses Case:JEDEC TO--220AB,molded plastic Terminals: Plated leads, solderable per MIL-STD- 111 111 750, Method 2026 High surge capability SR 1070CT 10.0 Single phase,half wave,50 Hz,resistive or inductive load. For capacitive load,derate by 20%. Ratings at 25 ambient temperature unless otherwise specified. 80 90 100 REVERSE VOLTAGE: 70 - 100 V FORWARD CURRENT: 10 A Dimensions in millimeters Diode Semiconductor Korea www.diode.kr

.001 06 0 80 100 T J =25℃ T J =75℃ T J =125℃ .01 4020 SR1070CT-SR1080CT SR1090CT-SR10100CT 100 1 1 0 1000 4000 100 0.1 T J =25 SR1070CT-SR1080CT SR1090CT-SR10100CT 0 50 100 150 Resistive or inductive load AMPERES MILLIAMPERES AMPERES AMPERES TRANSIENT THERMAL IMPEDANCE, PULSE DURATION, Sec JUNCTION CAPACITANCE, pF FIG.3 -- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS PER LEG REVERSE VOLT AGE, VOLT S FIG.5 -- TYPICAL JUNCTION CAPACITANCE FIG.6 -- TYPICAL TRANSIENT THERMAL IMPEDANCE NUMBER OF CYCLE AT 60Hz INSTANTANEOUS FORWARD VOLTAGE, VOLTS INSTANTANEOUS FORWARD CURRENT PEAK FORWARD SURGE CURRENT FIG.4 -- PEAK FORWARD SURGE CURRENT SR1070CT - - - SR10100CT CASE TEMPERATURE, PERCENT OF RATED PEAK REVERSE VOLTAGE, % AVERAGE FORWARD CURRENT FIG.2 -- TYPICAL REVERSE CHARACTERISTICS PER LEG FIG.1 --FORWARD CURRENT DERATING CURVE INSTANTANEOUS REVERSE CURRENT .01 .4 .5 .9 1.1 .6 1.0.7 .8 SR1070CT-SR1080CT 0. 1 . 2 . 3 1 . 2 SR1090CT-SR10100CT Pulse width = 300 µ s 1% Duty CycleT J =125 T J =25 200 0 15 1 0 125 100 150 175 50 100 T J J MAX. 8.3ms Single Half Sine-Wave (JEDEC Method) 0.1 10.01 0.1 10 100 100 SR1070CT-SR10A0CT www.diode.kr Diode Semiconductor Korea