SR10100 HDSEMI | Alldatasheet
Document overview
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- PDF pages: 4
Technical content
Features
o 10A
- VRRM
- High surge current capability
Applications
- Rectifier Marking Polarity: Color band denotes cathode SR10100 DO-2 DO-27 Plastic-Encapsulate Diodes Schottky Rectifier SR10100 100V Item Symbol Unit Conditions SR10 Repetitive Peak Reverse Voltage V RRM V Average Forward Current I F(AV) A 60Hz Half-sine wave, I FSM A 200 Junction Temperature T J -55~+150 Storage Temperature T STG Electrical Characteristics (Ta=25℃ Unless otherwise specified） Item Symbol Unit Test Condition Peak Forward Voltage V F V Peak Reverse Current I RRM1 mA V RM RRM Ta=25℃ I RRM2 Ta=125℃ 10 Thermal Resistance(Typical) R θJ-A /W℃ Between junction and ambient 35 R θJ-L Between junction and lead 8 100 100 0.85 Resistance load, Ta= 60Hz Half-sine wave,1 cycle, Ta=25℃ Surge(Non-repetitive)Forward Current =10A Ta=25℃ -55~+150 I F ℃ 100 0.1 Maximum RMS Voltage V RMS V 70 SR10100
H igh Diode Semiconductor 0 50 150 FIG.1: FORWARD CURRENT DERATING CURVE IO(A) TL( 100 25 75 125 10.0 8.0 6.0 4.0 2.0 IFSM(A) Number of Cycles FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT 200 160 120 1 10 100 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) IF(A) FIG.3: TYPICAL FORWARD CHARACTERISTICS 0.01 0.4 TJ=25 Pulse width=300us 1% Duty Cycle 0.1 1.0 100 0.20 FIG.4 TYPICAL REVERSE CHARACTERISTICS Voltage(%) IR(mA) T A = 150 °C T A = 125 °C T A = 25 °C 100 0.1 0.01 0.001 0.0001 10 20 30 40 50 60 70 80 90 100 12.0 Single Phase Half Wave 60Hz Resistive Or Inductive Load 0.375"(9.5mm) Lead Length VF(V)
H igh Diode Semiconductor DO-2 Unit: in inches (millimeters) 1.0(24.5) MIN 1.0(24.5) MIN
H igh Diode Semiconductor Ammo Box Packaging Specifications For Axial Lead Rectifiers