SR10000 SANYO | Alldatasheet

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Technical content

N2206 / 41006HKIM No.0001-1/8 SR10000 Series Overview The SR10000 Series is a SANYO’s original SIP (System In Package) that includes a DC/DC converter control IC, a power MOSFET and a Schottky barrier diode. All these components are mounted into one thin-and-small package by utilizing SANYO’s high-density mounting technology, “I ntegrated System in Board (ISB)”. The advantage using this DC/DC converter package is that it greatly decreases its mounting area and space, compared with when the same circuit is set up with the discrete devices. In addition to that, it is very easy to assemble step-up switching power supply with by just adding voltage-setting resistance, inductor and capacitors. Functions and Features

  • Since the SR10000 Series packages a voltage step-up DC/DC converter IC as well as power MOSFET and Schottky barrier diode devices in the same package with the minimum trace length between components, it can provides high efficiency and superior characteristics including low output ripple. In particular the mounting area required by these components is reduced when compared to implementations using discrete devices.
  • The output voltage is set using an external resistor.
  • Standby function: Standby mode current=1µA (maximum)
  • Automatic PWM/PFM switching control (SR10020, SR10040, SR10050)
  • External PWM/PFM switching control (SR10030, SR10060, SR10070)
  • Oscillator frequency: 100kHz (SR10060), 180kHz (SR10030), 300kHz (SR10020, SR10070), 500kHz (SR10040, SR10050) (accuracy±15%) Ordering number : EISB*0001A Ultrathin Miniature Package 1-channel Step-up DC/DC Converter ICs
  • The values given in this data sheet for models SR10060 is tentative and subject to change before putting into mass production. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before using any SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein.

No.0001-2/8 Comparison of Functions DC/DC Controller IC TR Maximum Rating Di Maximum Rating Type No. Control System Input Voltage Range Oscillator Frequency V DSS I D V RRM I O Output Setting *1 SR10020 Automatic PWM/PFM switching control 0.9V to 10V 300kHz 30V 2.5A 30V 1A 1.5V to 20V SR10030 External PWM/PFM switching control 0.9V to 10V 180kHz 30V 2.5A 30V 1A 1.5V to 20V SR10040 Automatic PWM/PFM switching control 0.9V to 10V 500kHz 30V 2.5A 30V 1A 1.5V to 20V SR10050 Automatic PWM/PFM switching control 0.9V to 10V 500kHz 30V 2.5A 15V 2A 1.5V to 10V SR10060 External PWM/PFM switching control 0.9V to 10V 100kHz 20V 3A 30V 1A 1.5V to 13V SR10070 External PWM/PFM switching control 0.9V to 10V 300kHz 20V 3A 15V 2A 1.5V to 10V *1: The output setting maximum values are voltages that are 1/1.5 times the VDSS and VRRM as a general rule of thumb, and they are provided to serve as a reference only. As such, it must be verified during actual operation that they do not exceed the rated voltages. Package Dimensions unit : mm 3.4 0.75 0.1 0.35 3.41.7 1.7 0.65 0.4 0.65 0.65 1.70.4 0.4 0.6MIN 0.651.7 0.4 B A C D E 234 5

No.0001-3/8 Pin Layout and Internal Equivalent Circuit Block Diagram Specifications Absolute Maximum Ratings at Ta = 25°C Device Parameter Symbol Conditions Ratings Unit VDD pin voltage V DD -0.3 to +12 V FB pin voltage VFB -0.3 to +12 V CE pin voltage V CE -0.3 to +12 V EXT pin voltage VEXT -0.3 to V DD+0.3 V IC EXT pin current IEXT ±100 mA Drain-to-source voltage 1 V DSS1 30 V Gate-to-source voltage 1 V GSS1 ±12 V Drain current 1 I D1 SR10020, SR10030, SR10040, SR10050 2.5 A Drain-to-source voltage 2 V DSS2 20 V Gate-to-source voltage 2 V GSS2 ±10 V Drain current 2 I D2 SR10060, SR10070 TR Allowable power dissipation P D-T 60mm ×60mm×1.6mm3 FR4 board 700 mW Reverse voltage 1 V RRM1 30 V Output current 1 I O1 SR10020, SR10030, SR10040, SR10060 Reverse voltage 2 V RRM2 15 V Output current 2 I O2 SR10050, SR10070 Di Allowable power dissipation P D-D 60mm ×60mm×1.6mm3 FR4 board 750 mW Operating temperature Topr -30 to +85 °C Storage temperature Tstg -40 to +125 °C Di TR CE GND EXT IC FB VDD 1A5A1B, 1C 2A, 2B, 2C, 3A, 3B 3C, 4A, 4B, 4C, 5B 4D, 4E, 5D, 5E 1D, 1E 2D, 2E, 3E Bottom view A B C D E 1 2 3 4 5

No.0001-4/8

Electrical Characteristics

Overall Operating Characteristics at Ta = 25°C, in the specified test circuit Ratings Parameter Symbol Conditions min typ max Unit Output voltage V OUT V IN=2V, IO=10mA 3.217 3.300 3.383 V Output voltage setting range VOSET V IN=VOSET×0.6, VDD=3.3V, IOUT=10mA 1.5 *2 V FB control voltage VFB 0.9 V Supply voltage V DD *3 1.8 10 V Operation start voltage VST I O=1mA 0.9 V VIN=2V, IO=0mA SR10060 29 41 µA VIN=2V, IO=0mA SR10030 45 64 µA VIN=2V, IO=0mA SR10020, SR10070 62 88 µA Current dissipation I DD VIN=2V, IO=0mA SR10040, SR10050 97 137 µA Standby current ISTB V IN=2V, VCE=0V 1 µA VIN=2V, IO=10mA SR10060 85 100 115 kHz VIN=2V, IO=10mA SR10030 153 180 207 kHz VIN=2V, IO=10mA SR10020, SR10070 255 300 345 kHz Oscillator frequency F OSC VIN=2V, IO=10mA SR10040, SR10050 425 500 575 kHz Efficiency EFFI 85 % CE high voltage VCEH 0.65 V CE low voltage VCEL 0.20 V PWM high voltage VPWMH SR10030, SR10060, SR10070 *4 VDD-0.2 V PWM low voltage VPWML SR10030, SR10060, SR10070 *4 V DD-1.0 V CE high current ICEH CE=V DD=3.3V 0.1 µA CE low current ICEL CE=0V 0.1 µA *2: The output setting maximum voltages are within 1/1.5 times the VDSS of the built-in MOSFET and within 1/1.5 times the VRRM of the Di as a general rule of thumb. As such, it must be verified during actual operation that they do not exceed the rated voltages. *3: VDD should be 1.8V or higher when VIN or other power source is supplying VDD since the output voltage and oscillating frequency become steady when VDD is set 1.8V or higher, although the built-in IC starts step-up voltage operation from VDD=0.8V. *4: For models SR10030, SR10060, and SR10070, the CE pin also serves to implement a PWM/PFM external switching function. When the voltage is VDD-0.2V or more, PWM control is exercised, and when it is VCEH or more but VDD-1.0V or less, PWM/PFM automatic switching at a duty ratio of 25% is controlled. Di Characteristics at Ta = 25°C, in the specified test circuit Parameter Symbol Conditions min typ max unit Forward voltage 1 VF1 IF=1A 0.43 0.47 V Reverse current 1 IR1 SR10020, SR10030 SR10040, SR10060 VR=30V 40 200 µA Forward voltage 2 VF2 IF=1A 0.30 0.35 V Reverse current 2 IR2 SR10050, SR10070 VR=6V 600 µA Pin Functions Pin No. Pin Name Description 1A GND Ground pin for IC. 1B, 1C TR Source Source pin for TR 1D, 1E, 2D, 2E, 3E TR Drain, Di Anode Drain of TR and Anode of Diode 2A, 2B, 2C, 3A, 3B, 3C 4A, 4B, 4C,5B IC VDD Supply voltage for IC 3D IC EXT, TR Gate Gate for TR 4D, 4E, 5D, 5E Di Cathode Cathode of Diode and V OUT 5A IC CE Operation starts when chip enable pin is set to “high”. This pin also serves as a PWM/PFM selector for models SR10030, SR10060, and SR10070. 5C IC FB External resistance connecting pin fo r output voltage setting, internal control voltage: 0.9V typical

No.0001-5/8 Equivalent Circuit and Test Peripheral Circuitry Selection rules of external components 1) RFB: Set the ratio of RFB1 and RFB2 to be RFB1+RFB2≤2MΩ and VFB=0.9V. 2) CFB: Set fzfb=1/(2×π×CFB×RFB1) to be within 5kHz to 30kHz. 3) L, Co, RSENSE: When ceramic capacitor is used for Co: L=10 µH, Co=10µF (SR10020, SR10040, SR10050, SR10070) L=22 µH, Co=10µF (SR10030, SR10060) RSENSE=50m Ω (SR10060), 100mΩ (other than SR10060) When tantalum capacitor is used for Co: L=10 µH, Co=47µF (SR10040, SR10050) L=22 µH, Co=47µF (SR10020, SR10070) L=47 µH, Co=47µF (SR10030, SR10060) RSENSE=None (shorted) When electrolytic capacitor is used for Co: L=22µH, Co=100µF//2.2µF ceramic (SR10020, SR10070) L=47 µH, Co=100µF//2.2µF ceramic (SR10030, SR10060) RSENSE=None (shorted) These constants of the components above should be changed if necessary for larger step-up ratio VOUT/VIN and larger output current IOUT using the expression shown below as a reference. Co=(Standard Co*) × (IOUT (mA) / 300mA × VOUT/VIN) * Standard Co: values shown above Di TR 120kΩ 68pF VOUT VIN CE GND EXT IC IIN A 45kΩ 22µH FOSC VIN FB 10µF L VDD 10µF V SR10000 Series Co RFB1 RFB2 CFB CIN VCE RSENSE 100mΩ

No.0001-6/8 Output Current, IO - A VO - IO Output Voltage, VO - V 2.0 2.2 2.6 2.8 2.4 3.0 3.4 3.2 ISB00001 100 0.1 23 5 7 1.0 23 5 7 10 23 5 7 100 23 5 7 1000 VIN=1.5V VIN=1.5V 1.2V 0.9V 1.2V 0.9V 0.8V [Conditions] *Ta=25°C*VIN=VCE*VDD=VOUT *L=10µH*CIN=22µF//0.1µF *COUT=22µF *RFB1 : RFB2=330kΩ : 150kΩ *CFB=22pF 2.9VOUT Output Current, IO - mA EFFI - IO Efficiency, EFFI - % ISB00002 [Conditions] *Ta=25°C*VIN=VCE*VDD=VOUT *L=10µH*CIN=22µF//0.1µF *COUT=22µF *RFB1 : RFB2=330kΩ : 150kΩ *CFB=22pF 2.9VOUT Output Current, IO - A VO - IO Output Voltage, VO - V 1.2 1.3 1.4 1.5 1.7 1.6 ISB00003 100 0.1 23 5 7 1.0 23 5 7 10 23 5 7 100 23 5 7 1000 VIN=1.5V VIN=1.5V 1.2V 0.9V 1.2V0.9V [Conditions] *Ta=25°C*VIN=VCE*VDD=2.9V *L=10µH*CIN=22µF//0.1µF *COUT=22µF *RFB1 : RFB2=220kΩ : 330kΩ *CFB=39pF 1.5VOUT Output Current, IO - mA EFFI - IO Efficiency, EFFI - % ISB00004 1.5VOUT Output Current, IO - A VO - IO Output Voltage, VO - V ISB00005 100 0.1 23 5 7 1.0 23 5 7 10 23 5 7 100 23 5 7 1000 [Conditions] *Ta=25°C*VIN=VDD=2.9V *L=10µH*CIN=10µF *COUT=10µF *RFB1 : RFB2=470kΩ : 30kΩ *CFB=22pF [Conditions] *Ta=25°C*VIN=VDD=2.9V *L=10µH, CIN=10µF *COUT=10µF *RFB1 : RFB2=470kΩ : 30kΩ *CFB=22pF 15VOUT Output Current, IO - mA EFFI - IO Efficiency, EFFI - % ISB00006 15VOUT [Conditions] *Ta=25°C*VIN=VCE*VDD=2.9V *L=10µH*CIN=22µF//0.1µF *COUT=22µF *RFB1 : RFB2=220kΩ : 330kΩ *CFB=39pF

No.0001-7/8 Output Current, IO - A VO - IO Output Voltage, VO - V 2.0 2.2 2.6 2.8 2.4 3.0 3.4 3.2 ISB00007 100 0.1 23 5 7 1.0 23 5 7 10 23 5 7 100 23 5 7 1000 VIN=1.5V VIN=1.5V 1.2V 0.9V 1.2V 0.9V 2.9VOUT Output Current, IO - mA EFFI - IO Efficiency, EFFI - % ISB00008 2.9VOUT Output Current, IO - A VO - IO Output Voltage, VO - V 1.2 1.3 1.4 1.5 1.7 1.6 ISB00009 100 0.1 23 5 7 1.0 23 5 7 10 23 5 7 100 23 5 7 1000 VIN=1.5V VIN=1.5V 1.2V 0.9V 1.2V0.9V 1.5VOUT Output Current, IO - mA EFFI - IO Efficiency, EFFI - % ISB00010 1.5VOUT VO - Ta Output Voltage, VO - V -40 2.5 2.6 2.7 2.8 3.0 2.9 20 40-20 0 100 8060 ISB00011 [Conditions] *Ta=25°C*VIN=12V*VDD=VOUT *L=10µH*CIN=22µF//0.1µF *COUT=22µF *RFB1 : RFB2=330kΩ : 150kΩ *CFB=22pF*IOUT=50mA 2.9VOUT [Conditions] *Ta=25°C*VDD=VOUT*L=10µH *CIN=22µF//0.1µF*COUT=10µF *RFB1 : RFB2=330kΩ : 150kΩ *CFB=22pF [Conditions] *Ta=25°C*VDD=VOUT*L=10µH *CIN=22µF//0.1µF*COUT=10µF *RFB1 : RFB2=330kΩ : 150kΩ *CFB=22pF [Conditions] Ta=25°C*VDD=2.9V*L=10µH *CIN=22µF//0.1µF*COUT=10µF *RFB1 : RFB2=220kΩ : 330kΩ *CFB=39pF [Conditions] Ta=25°C*VDD=2.9V*L=10µH *CIN=22µF//0.1µF*COUT=10µF *RFB1 : RFB2=220kΩ : 330kΩ *CFB=39pF Ambient Temperature, Ta -°C VO - VHLD Operation Hold Voltage, VHLD - V -40 0.2 0.4 0.6 1.0 0.8 20 40-20 0 100 8060 ISB00012Ambient Temperature, Ta -°C [Conditions] *Ta=25°C*VDD=VOUT*L=10µH *CIN=22µF//0.1µF*COUT=22µF *RFB1 : RFB2=330kΩ : 150kΩ *CFB=22pF

No.0001-8/8 PS <Manufactured by> ISB Business Unit, Electronic Device Company, Component & Device Group, SANYO Electric Co., Ltd. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of April, 2006. Specifications and information herein are subject to change without notice.