SPW47N60C2 INFINEON | Alldatasheet

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Technical content

Cool MOS™ Power Transistor Feature

  • New revolutionary high voltage technology
  • Worldwide best RDS(on) in TO 247
  • Ultra low gate charge
  • Periodic avalanche rated
  • Extreme dv/dt rated
  • Ultra low effective capacitances
  • Improved noise immunity Product Summary VDS 600 V RDS(on) 0.07 Ω ID 47 A P-TO247 Type Package Ordering Code SPW47N60C2 P-TO247 Q67040-S4323 Marking 47N60C2 Maximum Ratings, at TC = 25°C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current TC = 25 °C TC = 100 °C ID A Pulsed drain current, tp limited by Tjmax ID puls 94 Avalanche energy, single pulse ID=10A, VDD=50V EAS 1800 mJ Avalanche energy, repetitive tAR limited by Tjmax1) ID=20A, VDD=50V EAR 1 Avalanche current, repetitive tAR limited by Tjmax IAR 20 A Reverse diode dv/dt IS=47A, VDS < VDD, di/dt=100A/µs, Tjmax=150°C dv/dt 6 V/ns Gate source voltage VGS ±20 V Power dissipation, TC = 25°C Ptot 415 W Operating and storage temperature Tj , Tstg -55... +150 °C

Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 0.3 K/W Thermal resistance, junction - ambient, leaded RthJA - - 62 Linear derating factor - - 3.33 W/K Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Tsold - - 260 °C Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Static Characteristics Drain-source breakdown voltage VGS=0V, ID=0.25mA V(BR)DSS 600 - - V Drain-source avalanche breakdown voltage VGS=0V, ID=20A V(BR)DS - 700 - Gate threshold voltage, VGS = VDS ID=2.7mA VGS(th) 3.5 4.5 5.5 Zero gate voltage drain current VDS = 600 V, VGS = 0 V, Tj = 25 °C VDS = 600 V, VGS = 0 V, Tj = 150 °C IDSS 0.5 250 µA Gate-source leakage current VGS=20V, VDS=0V IGSS - - 100 nA Drain-source on-state resistance VGS=10V, ID=30A, Tj=25°C RDS(on) - 0.06 0.07 Ω Gate input resistance f = 1 MHz, open drain RG - 0.62 - 1Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.

Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Characteristics Transconductance gfs VDS≥2*ID*RDS(on)max, ID=30A - 30 - S Input capacitance Ciss VGS=0V, VDS=25V, f=1MHz - 8800 - pF Output capacitance Coss - 3150 - Reverse transfer capacitance Crss - 36 - Effective output capacitance,1) energy related Co(er) VGS=0V, VDS=0V to 480V - 233 - pF Effective output capacitance,2) time related Co(tr) - 470 - Turn-on delay time td(on) VDD=380V, VGS=0/13V, ID=47A, RG=1.8Ω , Tj=125°C - 28 - ns Rise time tr - 9.5 - Turn-off delay time td(off) - 103 155 Fall time tf - 9.6 14.4 Gate Charge Characteristics Gate to source charge Qgs VDD=350V, ID=47A - 56 - nC Gate to drain charge Qgd - 123 - Gate charge total Qg VDD=350V, ID=47A, VGS=0 to 10V - 220 286 Gate plateau voltage V(plateau) VDD=350V, ID=47A - 8 - V 1Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. 2Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Characteristics Inverse diode continuous forward current IS TC=25°C - - 47 A Inverse diode direct current, pulsed ISM - - 94 Inverse diode forward voltage VSD VGS=0V, IF=IS - 1 1.2 V Reverse recovery time trr VR=350V, IF=IS , diF/dt=100A/µs - 650 1100 ns Reverse recovery charge Qrr - 24 - µC Peak reverse recovery current Irrm - 62 - A Peak rate of fall of reverse recovery current dirr/dt - 2500 - A/µs Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit typ. typ. Thermal resistance Rth1 0.002694 K/W Rth2 0.006036 Rth3 0.00791 Rth4 0.023 Rth5 0.035 Rth6 0.018 Thermal capacitance Cth1 0.001219 Ws/K Cth2 0.004011 Cth3 0.006484 Cth4 0.008028 Cth5 0.05 Cth6 0.316 External Heatsink Tj Tcase Tamb Cth1 Cth2 Rth1 Rth,n Cth,n Ptot (t)

1 Power dissipation

Ptot = f (TC) 0 20 40 60 80 100 120 °C 160 TC 100 150 200 250 300 350 400 W 500 SPW47N60C2 Ptot

2 Safe operating area

ID = f ( VDS ) parameter : D = 0 , TC=25°C 10 0 10 1 10 2 10 3 V VDS -2 10 -1 10 0 10 1 10 2 10 A ID tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC

3 Transient thermal impedance

ZthJC = f (tp) parameter: D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -4 10 -3 10 -2 10 -1 10 0 10 1 10 K/WZthJC D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 4 Typ. output characteristic ID = f (VDS); Tj=25°C parameter: tp = 10 µs, VGS 0 5 10 15 V 25 VDS 100 120 140 160 180 A 220 ID 10V 11V 20V 15V 12V

5 Typ. output characteristic ID = f (VDS); Tj=150°C parameter: tp = 10 µs, VGS 0 5 10 15 V 25 VDS A 110 ID 6.5V 7.5V 8.5V 10V 20V 12V 6 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150°C, VGS 0 20 40 60 80 A 110 ID 0.1 0.15 0.2 0.25 0.3 0.35 0.4 Ω 0.5 RDS(on) 9V 10V 12V 20V 6.5V 7.5V 8.5V

7 Drain-source on-state resistance

RDS(on) = f (Tj) parameter : ID = 30 A, VGS = 10 V -60 -20 20 60 100 °C 180 Tj 0.04 0.08 0.12 0.16 0.2 0.24 0.28 0.32 Ω 0.38 SPW47N60C2 RDS(on) typ 98% 8 Typ. transfer characteristics ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 10 µs 0 2 4 6 8 10 12 14 V 18 VGS 100 120 140 160 180 A 220 ID

9 Forward characteristics of body diode

IF = f (VSD) parameter: Tj , tp = 10 µs VSD -1 10 0 10 1 10 2 10 A SPW47N60C2 IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%) 10 Typ. switching time t = f (RG), inductive load, Tj=125°C par.: VDS=380V, VGS=0/+13V, ID=47 A 0 2 4 6 8 10 12 14 16 Ω 20 RG 0 10 1 10 2 10 3 10 ns t td(on) td(off) tr tf 11 Typ. switching losses1) E = f (ID), inductive load, Tj=125°C par.: VDS=380V, VGS=0/+13V, RG=1.8Ω 0 10 20 30 40 50 60 70 80 A 100 ID 0.5 1.5 2.5 3.5 mWs E Eon* Eoff *) Eon includes SDP06S60 diode commutation losses. 1This chart helps to estimate the switching power losses. The values can be different under other operating conditions. 12 Typ. switching losses1) E = f(RG), inductive load, Tj=125°C par.: VDS=380V, VGS=0/+13V, ID=47 A 0 2 4 6 8 10 12 14 16 Ω 20 RG 0.5 1.5 mWs E *) Eon includes SDP06S60 diode commutation losses. 1This chart helps to estimate the switching power losses. The values can be different under other operating conditions. Eon* Eoff

13 Avalanche SOA

IAR = f (tAR) par.: Tj ≤ 150 °C 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 µs tAR A IAR Tj(START)=25°C Tj(START)=125°C

14 Avalanche energy

EAS = f (Tj) par.: ID = 10 A, VDD = 50 V 20 40 60 80 100 120 °C 160 Tj 200 400 600 800 1000 1200 1400 1600 mJ 2000 EAS

15 Drain-source breakdown voltage

V(BR)DSS = f (Tj) -60 -20 20 60 100 °C 180 Tj 540 560 580 600 620 640 660 680 V 720 SPW47N60C2 V(BR)DSS

16 Avalanche power losses

PAR = f (f ) parameter: EAR=1mJ 10 4 10 5 10 6 Hz f 100 200 300 W 500 PAR

17 Typ. capacitances C = f (VDS) parameter: VGS=0V, f=1 MHz 0 100 200 300 400 V 600 VDS 0 10 1 10 2 10 3 10 4 10 5 10 pF C Ciss Coss Crss 18 Typ. Coss stored energy Eoss=f(VDS) 0 100 200 300 400 V 600 VDS µJ Eoss Definition of diodes switching characteristics

6.35 15.9 6.17 9.91 20.9 4.37 5.94 ø3.61 2.97 x 0.127 1.2 2.92 5.46 2.03 5.03 0.762 MAX. 2.4+0.05 41.22 20˚ D 7 D 1.75 1.14 0.243 General tolerance unless otherwise specified: Leadframe parts: ±0.05 Package parts: ±0.12

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