SPW35N60CFD

SPW35N60CFD_08 INFINEON | Alldatasheet

Document overview

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• PDF pages: 13

Technical content

Features

• New revolutionary high voltage technology
• Intrinsic fast-recovery body diode
• Extremely low reverse recovery charge
• Ultra low gate charge
• Extreme dv /dt rated
• High peak current capability
• Periodic avalanche rated
• Qualified according to JEDEC 1) for target applications
• Pb-free lead plating; RoHS compliant Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T C=25 °C A T C=100 °C Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=10 A, V DD=50 V 1300 mJ Avalanche energy, repetitive t AR 2),3) E AR I D=20 A, V DD=50 V Avalanche current, repetitive t AR 2),3) I AR A Drain source voltage slope d v /dt I D=34.1 A, V DS=480 V, T j=125 °C V/ns Reverse diode dv /dt dv /dt V/ns Maximum diode commutation speed d i /dt A/µs Gate source voltage V GS static V AC (f >1 Hz) Power dissipation P tot T C=25 °C W Operating and storage temperature T j, T stg °C Value 34.1 21.6 ±20 ±30 313 -55 ... 150 600 I S=34.1 A, V DS=480 V, T j=125 °C V DS 600 V R DS(on),max 0.118 Ω I D 34 A Product Summary Type Package Ordering Code Marking SPW35N60CFD PG-TO247 Q67045A5053 35N60CFD PG-TO247 Rev. 1.3 page 1 2008 -04-17 Please note the new package dimensions arccording to PCN 2009-134-A

Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R thJC - - 0.4 K/W R thJA leaded - - 62 Soldering temperature, wave solderingT sold 1.6 mm (0.063 in.) from case for 10 s - - 260 °C Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA 600 - - V Avalanche breakdown voltage V (BR)DS V GS=0 V, I D=34.1 A - 700 - Gate threshold voltage V GS(th) V DS=V GS, I D=1.9 mA 345 Zero gate voltage drain current I DSS V DS=600 V, V GS=0 V, T j=25 °C -4- µ A V DS=600 V, V GS=0 V, T j=150 °C - 3300 - Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=21.6 A, T j=25 °C - 0.10 0.118 Ω V GS=10 V, I D=21.6 A, Gate resistance R G f =1 MHz, open drain - 0.6 - Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=21.6 A -2 1- S Values Thermal resistance, junction - ambient Rev. 1.3 page 2 2008-04 -17 Please note the new package dimensions arccording to PCN 2009-134-A

Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 5060 - pF Output capacitance C oss - 1400 - Reverse transfer capacitance C rss -5 2- Effective output capacitance, energy related4) C o(er) - 162 - Effective output capacitance, time related5) C o(tr) - 299 - Turn-on delay time t d(on) -2 0- n s Rise time t r -2 5- Turn-off delay time t d(off) -6 5- Fall time t f -1 2- Gate Charge Characteristics Gate to source charge Q gs -3 6- n C Gate to drain charge Q gd -8 7- Gate charge total Q g - 163 212 Gate plateau voltage V plateau - 7.2 - V 3) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. 4) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS. 5) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. 1) J-STD20 and JESD22 2) Pulse width t p limited by T j,max Values V GS=0 V, V DS=25 V, f =1 MHz V DD=400 V, V GS=10 V, I D=34.1 A, R G=3.3 Ω V DD=480 V, I D=34.1 A, V GS=0 to 10 V V GS=0 V, V DS=0 V to 480 V Rev. 1.3 page 3 2008 -04-17 Please note the new package dimensions arccording to PCN 2009-134-A

Parameter Symbol Conditions Unit min. typ. max. Reverse Diode Diode continuous forward current I S - - 34.1 A Diode pulse current I S,pulse -- 8 5 Diode forward voltage V SD V GS=0 V, I F=34.1 A, T j=25 °C - 1.0 1.2 V Reverse recovery time t rr - 180 - ns Reverse recovery charge Q rr - 1.5 - µC Peak reverse recovery current I rrm -1 6- A Typical Transient Thermal Characteristics V R=480 V, I F=I S, di F/dt =100 A/µs T C=25 °C Values 5) C th6 models the additional heat capacitance of the package in case of non-ideal cooling. It is not needed if R thCA=0 K/W. Symbol Value Unit Symbol Value Unit typ. typ. R th1 0.00441 K/W C th1 0.00037 Ws/K R th2 0.00608 C th2 0.00223 R th3 0.0341 C th3 0.00315 R th4 0.0602 C th4 0.0179 R th5 0.0884 C th5 0.098 C th6 4.45) Rev. 1.3 page 4 2008-04-17 Please note the new package dimensions arccording to PCN 2009-134-A

1 Power dissipation 2 Safe operating area

P tot=f(T C) I D=f(V DS); T C=25 °C; D =0 parameter: t p 3 Max. transient thermal impedance 4 Typ. output characteristics I D=f(V DS); T j=25 °C I D=f(V DS); T j=25 °C parameter: D=t p/T parameter: V GS 100 200 300 400 0 40 80 120 160 T C [°C] P tot [W] 1 µs 10 µs 100 µs 1 ms 10 ms DC 103102101100 102 101 100 10-1 V DS [V] I D [A] single pulse0.01 0.02 0.05 0.1 0.2 0.5 10010-110-210-310-410-510-6 100 10-1 10-2 10-3 t p [s] Z thJC [K/W] 5 V 5.5 V 6 V 6.5 V 7 V 8 V

10 V20 V

V DS [V] I D [A] limited by on-state resistance Rev. 1.3 page 5 2008 -04-17 Please note the new package dimensions arccording to PCN 2009-134-A

5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D=f(V DS); T j=150 °C R DS(on)=f(I D); T j=150 °C parameter: V GS parameter: V GS 7 Drain-source on-state resistance 8 Typ. transfer characteristics R DS(on)=f(T j); I D=21.9 A; V GS=10 V I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j typ 98 % 0.05 0.1 0.15 0.2 0.25 0.3 -60 -20 20 60 100 140 180 T j [°C] R DS(on) [Ω] C °25 C °150 120 150 02468 1 0 V GS [V] I D [A] 5 V 5.5 V 6 V 6.5 V 7 V 8 V V DS [V] I D [A] 5 V 5.5 V 6 V 6.5 V 7 V 20 V 0.1 0.2 0.3 0.4 0.5 0 1 02 03 04 0 I D [A] R DS(on) [Ω] Rev. 1.3 page 6 2008 -04-17 Please note the new package dimensions arccording to PCN 2009-134-A

9 Typ. gate charge 10 Forward characteristics of reverse diode V GS=f(Q gate); I D=34.1 A pulsed I F=f(V SD) parameter: V DD parameter: T j

11 Avalanche SOA 12 Avalanche energy

I AR=f(t AR) E AS=f(T j); I D=10 A; V DD=50 V parameter: T j(start) 200 400 600 800 1000 1200 1400 20 60 100 140 180 T j [°C] E AS [mJ] 25 °C 150 °C 25 °C, 98% 150 °C, 98% 102 101 100 10-1 0 0.5 1 1.5 2 V SD [V] I F [A] 125 °C 25 °C 10310210110010-110-210-3 t AR [µs] I AV [A] 120 V 480 V 0 50 100 150 200 Q gate [nC] V GS [V] Rev. 1.3 page 7 2008-04-17 Please note the new package dimensions arccording to PCN 2009-134-A

13 Drain-source breakdown voltage 14 Typ. capacitances V BR(DSS)=f(T j); I D=10 mA C =f(V DS); V GS=0 V; f =1 MHz 15 Typ. C oss stored energy 16 Typ. reverse recovery charge E oss= f(V DS)Q rr=f(T j); I S=34.1 A; di /dt =100 A/µs 540 580 620 660 700 -60 -20 20 60 100 140 180 T j [°C] V BR(DSS) [V] Ciss Coss Crss 105 104 103 102 101 0 100 200 300 400 500 V DS [V] C [pF] 0 100 200 300 400 500 600 V DS [V] E oss [µJ] 1.4 1.6 1.8 2.2 2.4 2.6 2.8 25 50 75 100 125 150 T j [°C] Q rr [µC] Rev. 1.3 page 8 2008 -04-17 Please note the new package dimensions arccording to PCN 2009-134-A

17 Typ. reverse recovery charge 18 Typ. reverse recovery charge Q rr=f(I S); di/ dt =100 A/µs Q rr=f(di /dt ); I S=34.1 A parameter: T j parameter: T j 25 °C 125 °C 0.5 1.5 2.5 0 5 10 15 20 25 30 35 I S [A] Q rr [µC] 25 °C 125 °C 0 300 600 900 di/ dt [A/µs] Q rr [µC] Rev. 1.3 page 9 2008 -04-17 Please note the new package dimensions arccording to PCN 2009-134-A

Definition of diode switching characteristics Rev. 1.3 page 10 2008 -04-17 Please note the new package dimensions arccording to PCN 2009-134-A

Rev. 1.3 page 11 2008 -04-17 Please note the new package dimensions arccording to PCN 2009-134-A

Rev. 1.3 page 12 2008 -04-17 SPW35N60CFD Please note the new package dimensions arccording to PCN 2009-134-A

New package outlines TO-247 Final Data Sheet Erratum Rev. 2.0, 2010-02-01

1 New package outlines TO-247

Assembly capacity extension for CoolMOSTM technology products assembled in lead-free package PG-TO247-3 at subcontractor ASE (Weihai) Inc., China (Changes are marked in blue.) Figure 1 Outlines TO-247, dimensions in mm/inches