SPW32N50C3 INFINEON | Alldatasheet
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2004-03-16Rev. 2.0 Page 1 SPW32N50C3 Cool MOS™ Power Transistor VDS @ Tjmax 560 V RDS(on) 0.11 Ω ID 32 A Feature
- New revolutionary high voltage technology
- Ultra low gate charge
- Periodic avalanche rated
- Extreme dv/dt rated
- Ultra low effective capacitances
- Improved transconductance P-TO247 Type Package Ordering Code SPW32N50C3 P-TO247 Q67040-S4613 Marking 32N50C3 Maximum Ratings Parameter Symbol Value Unit Continuous drain current TC = 25 °C TC = 100 °C ID A Pulsed drain current, tp limited by Tjmax ID puls 96 Avalanche energy, single pulse ID = 10 A, VDD = 50 V EAS 1100 mJ Avalanche energy, repetitive tAR limited by Tjmax1) ID = 20 A, VDD = 50 V EAR 1 Avalanche current, repetitive tAR limited by Tjmax IAR 20 A Gate source voltage VGS ±20 V Gate source voltage AC (f >1Hz) VGS ±30 Power dissipation, TC = 25°C Ptot 284 W Operating and storage temperature Tj , Tstg -55... +150 °C
2004-03-16Rev. 2.0 Page 2 SPW32N50C3 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope VDS = 400 V, ID = 32 A, Tj = 125 °C dv/dt 50 V/ns Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Thermal resistance, junction - case RthJC - - 0.44 K/W Thermal resistance, junction - ambient, leaded RthJA - - 62 Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Tsold - - 260 °C Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 500 - - V Drain-Source avalanche breakdown voltage V(BR)DS VGS=0V, ID=20A - 600 - Gate threshold voltage VGS(th) ID=1800µΑ, VGS=VDS 2.1 3 3.9 Zero gate voltage drain current IDSS VDS=500V, VGS=0V, Tj=25°C, Tj=150°C 0.5 250 µA Gate-source leakage current IGSS VGS=20V, VDS=0V - - 100 nA Drain-source on-state resistance RDS(on) VGS=10V, ID=20A, Tj=25°C Tj=150°C 0.09 0.27 0.11 Ω Gate input resistance RG f=1MHz, open Drain - 0.8 -
2004-03-16Rev. 2.0 Page 3 SPW32N50C3 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Transconductance gfs VDS≥2*ID*RDS(on)max, ID=20A - 30 - S Input capacitance Ciss VGS=0V, VDS=25V, f=1MHz - 4200 - pF Output capacitance Coss - 1700 - Reverse transfer capacitance Crss - 90 - Effective output capacitance,2) energy related Co(er) VGS=0V, VDS=0V to 400V - 181 - pF Effective output capacitance,3) time related Co(tr) - 350 - Turn-on delay time td(on) VDD=380V, VGS=0/10V, ID=32A, RG=2.7Ω - 20 - ns Rise time tr - 30 - Turn-off delay time td(off) - 100 - Fall time tf - 10 - Gate Charge Characteristics Gate to source charge Qgs VDD=380V, ID=32A - 15 - nC Gate to drain charge Qgd - 90 - Gate charge total Qg VDD=380V, ID=32A, VGS=0 to 10V - 170 - Gate plateau voltage V(plateau) VDD=380V, ID=32A - 5 - V 1Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f. 2Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. 3Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
2004-03-16Rev. 2.0 Page 4 SPW32N50C3 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Inverse diode continuous forward current IS TC=25°C - - 32 A Inverse diode direct current, pulsed ISM - - 96 Inverse diode forward voltage VSD VGS=0V, IF=IS - 1 1.2 V Reverse recovery time trr VR=380V, IF=IS , diF/dt=100A/µs - 500 - ns Reverse recovery charge Qrr - 15 - µC Peak reverse recovery current Irrm - 60 - A Peak rate of fall of reverse recovery current dirr/dt - 1000 - A/µs Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit typ. typ. Thermal resistance Rth1 0.004367 K/W Rth2 0.008742 Rth3 0.017 Rth4 0.081 Rth5 0.103 Rth6 0.049 Thermal capacitance Cth1 0.0006644 Ws/K Cth2 0.002479 Cth3 0.00336 Cth4 0.009048 Cth5 0.017 Cth6 0.114 External Heatsink Tj Tcase Tamb Cth1 Cth2 Rth1 Rth,n Cth,n Ptot (t)
2004-03-16Rev. 2.0 Page 5 SPW32N50C3
1 Power dissipation
Ptot = f (TC) 0 20 40 60 80 100 120 °C 160 TC 120 160 200 240 W 320 SPW32N50C3 Ptot
2 Safe operating area
ID = f ( VDS ) parameter : D = 0 , TC=25°C 10 0 10 1 10 2 10 3 V VDS -2 10 -1 10 0 10 1 10 2 10 A ID tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC
3 Transient thermal impedance
ZthJC = f (tp) parameter: D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -1 s tp -4 10 -3 10 -2 10 -1 10 0 10 K/W ZthJC D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 4 Typ. output characteristic ID = f (VDS); Tj=25°C parameter: tp = 10 µs, VGS 0 5 10 15 V 25 VDS 100 A 140 ID Vgs = 4.5V Vgs = 5V Vgs = 5.5V Vgs = 6V Vgs = 7V Vgs = 20V
2004-03-16Rev. 2.0 Page 6 SPW32N50C3 5 Typ. output characteristic ID = f (VDS); Tj=150°C parameter: tp = 10 µs, VGS 0 5 10 15 V 25 VDS A ID Vgs = 4V Vgs = 4.5V Vgs = 5V Vgs = 5.5V Vgs = 6V Vgs = 20V 6 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150°C, VGS 0 10 20 30 40 50 60 ID 80 ID 0.2 0.4 0.6 0.8 1.2 1.4 1.6 Ω RDS(on) Vgs = 4V Vgs = 5.5V Vgs = 4.5VVgs = 5V Vgs = 20
7 Drain-source on-state resistance
RDS(on) = f (Tj) parameter : ID = 20 A, VGS = 10 V -60 -20 20 60 100 °C 180 Tj 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 Ω 0.65 SPW32N50C3 RDS(on) typ 98% 8 Typ. transfer characteristics ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 10 µs 0 1 2 3 4 5 6 7 8 V 10 VGS 100 120 A 160 ID Tj = 25°C Tj =150°C
2004-03-16Rev. 2.0 Page 7 SPW32N50C3 9 Typ. gate charge VGS = f (QGate) parameter: ID = 32 A pulsed 0 40 80 120 160 200 nC 260 QGate V SPW32N50C3 VGS 0.2 VDS max
0.8 VDS max
10 Forward characteristics of body diode
IF = f (VSD) parameter: Tj , tp = 10 µs VSD -1 10 0 10 1 10 2 10 A SPW32N50C3 IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%)
11 Avalanche SOA
IAR = f (tAR) par.: Tj ≤ 150 °C 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 µs tAR A IAR Tj(START)=25°C Tj(START)=125°C
12 Avalanche energy
EAS = f (Tj) par.: ID = 10 A, VDD = 50 V 20 40 60 80 100 120 °C 160 Tj 0.2 0.4 0.6 0.8 mJ 1.2 EAS
2004-03-16Rev. 2.0 Page 8 SPW32N50C3
13 Drain-source breakdown voltage
V(BR)DSS = f (Tj) -60 -20 20 60 100 °C 180 Tj 450 460 470 480 490 500 510 520 530 540 550 560 570 V 600 SPW32N50C3 V(BR)DSS
14 Avalanche power losses
PAR = f (f ) parameter: EAR=1mJ 10 4 10 5 10 6 Hz f 200 400 600 W 1000 PAR 15 Typ. capacitances C = f (VDS) parameter: VGS=0V, f=1 MHz 0 100 200 300 V 500 VDS 0 10 1 10 2 10 3 10 4 10 5 10 pF C Ciss Crss Coss 16 Typ. Coss stored energy Eoss=f(VDS) 0 100 200 300 V 500 VDS µJ Eoss
2004-03-16Rev. 2.0 Page 9 SPW32N50C3 Definition of diodes switching characteristics
2004-03-16Rev. 2.0 Page 10 SPW32N50C3 P-TO-247-3-1 6.35 15.9 6.17 9.91 20.9 4.37 5.94 ø3.61 2.97 x 0.127 1.2 2.92 5.46 2.03 5.03 0.762 MAX. 2.4 +0.05 41.22 20˚ D 7 D 1.75 1.14 0.243 General tolerance unless otherwise specified: Leadframe parts: ±0.05 Package parts: ±0.12
2004-03-16Rev. 2.0 Page 11 SPW32N50C3 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.