SPW16N50C3 INFINEON | Alldatasheet
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Cool MOS Power Transistor VDS @ Tjmax 560 V RDS(on) 0.28 Ω ID 16 A Feature
- New revolutionary high voltage technology
- Ultra low gate charge
- Periodic avalanche rated
- Extreme dv/dt rated
- Ultra low effective capacitances
- Improved transconductance P-TO247 Type Package Ordering Code SPW16N50C3 P-TO247 Q67040-S4584 Marking 16N50C3 Maximum Ratings Parameter Symbol Value Unit Continuous drain current TC = 25 °C TC = 100 °C ID A Pulsed drain current, tp limited by Tjma x ID puls 48 Avalanche energy, single pulse ID = 8 , VDD = 50 V EAS 460 mJ Avalanche energy, repetitive tAR limited by Tjmax1) ID = 16 A, VDD = 50 V EAR 0.64 Avalanche current, repetitive tAR limited by Tjma x IAR 16 A Reverse diode dv/dt IS=16A, VDS=480V, Tj=125°C dv/dt 6 V/ns Gate source voltage VGS ±20 V Gate source voltage AC (f >1Hz) VGS ±30 Power dissipation, TC = 25°C Ptot 160 W Operating and storage temperature Tj , Tstg -55... +150 °C
Parameter Symbol Value Unit Drain Source voltage slope V DS = 400 V, ID = 16 A, Tj = 125 °C dv/dt 50 V/ns Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Thermal resistance, junction - case R thJC - - 0.78 K/W Thermal resistance, junction - ambient, leaded R thJA - - 62 Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Tsold - - 260 °C Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Drain-source breakdown voltage V(BR)DSS V GS =0V, ID=0.25mA 500 - - V Drain-Source avalanche breakdown voltage V(BR)DS V GS =0V, ID=16A - 600 - Gate threshold voltage VGS(th) ID=675µΑ , V GS =VDS 2.1 3 3.9 Zero gate voltage drain current IDSS V DS =500V, VGS =0V, Tj=25°C, Tj=150°C 0.1 100 µA Gate-source leakage current IGSS V GS =20V, VDS =0V - - 100 nA Drain-source on-state resistance RDS(on) V GS =10V, ID=10A, Tj=25°C Tj=150°C 0.25 0.68 0.28 Ω Gate input resistance R G f=1MHz, open Drain - 1.5 -
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Transconductance gfs V DS ≥2*ID*RDS(on)max, ID=10A - 14 - S Input capacitance C iss V GS =0V, V DS =25V, f=1MHz - 1600 - pF Output capacitance C oss - 800 - Reverse transfer capacitanceC rss - 30 - Effective output capacitance,2) energy related Co(er) V GS =0V, V DS =0V to 400V - 64 - pF Effective output capacitance,3) time related Co(tr) - 124 - Turn-on delay time td(on) V DD =380V, V GS =0/10V, ID=16A, RG =4.3Ω - 10 - ns Rise time tr - 8 - Turn-off delay time td(off) - 50 - Fall time tf - 8 - Gate Charge Characteristics Gate to source charge Q gs V DD =380V, ID=16A - 7 - nC Gate to drain charge Q gd - 36 - Gate charge total Qg V DD =380V, ID=16A, V GS =0 to 10V - 66 - Gate plateau voltage V(plateau) V DD =380V, ID=16A - 5 - V 1Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR *f. 2Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. 3Co(tr) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% VDSS.
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Inverse diode continuous forward current IS TC =25°C - - 16 A Inverse diode direct current, pulsed ISM - - 48 Inverse diode forward voltage VSD VGS =0V, IF=IS - 1 1.2 V Reverse recovery time trr VR=380V, IF=IS , diF/dt=100A/µs - 420 - ns Reverse recovery charge Q rr - 7 - µC Peak reverse recovery currentIrrm - 40 - A Peak rate of fall of reverse recovery current dirr/dt - tbd - A/µs Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit typ. typ. Thermal resistance Rth1 0.012 K/W Rth2 0.023 Rth3 0.043 Rth4 0.149 Rth5 0.17 Rth6 0.069 Thermal capacitance Cth1 0.0002495 Ws/K Cth2 0.0009406 Cth3 0.001298 Cth4 0.00362 Cth5 0.009484 Cth6 0.077 External Heatsink Tj Tcase Tamb Cth1 Cth2 Rth1 Rth,n Cth,n Ptot (t)
1 Power dissipation
Ptot = f (TC) 0 20 40 60 80 100 120 °C 160 TC 100 120 140 W 170 SPW16N50C3 Ptot
2 Safe operating area
ID = f ( VDS ) parameter : D = 0 , TC=25°C 10 0 10 1 10 2 10 3 V VDS -2 10 -1 10 0 10 1 10 2 10 A ID tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC
3 Transient thermal impedance
ZthJC = f (tp) parameter: D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -1 s tp -4 10 -3 10 -2 10 -1 10 0 10 1 10 K/W ZthJC D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 4 Typ. output characteristic ID = f (VDS ); Tj=25°C parameter: tp = 10 µs, VGS 0 5 10 15 V 25 VDS A ID 4.5V 5.5V 20V 6.5V
5 Typ. output characteristic ID = f (VDS ); Tj=150°C parameter: tp = 10 µs, VGS 0 5 10 15 V 25 VDS A ID 4.5V 20V 6 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150°C, V GS 0 5 10 15 20 A 30 ID 0.4 0.8 1.2 Ω RDS(on) 6V5V4.5V4V 20V
7 Drain-source on-state resistance
RDS(on) = f (Tj) parameter : ID = 10 A, VGS = 10 V -60 -20 20 60 100 °C 180 Tj 0.2 0.4 0.6 0.8 1.2 Ω 1.6 SPW16N50C3 RDS(on) typ 98% 8 Typ. transfer characteristics ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 10 µs 0 1 2 3 4 5 6 7 8 V 10 VGS A ID Tj = 25°C Tj = 150°C
9 Typ. gate charge VGS = f (QGate) parameter: ID = 16 A pulsed 0 10 20 30 40 50 60 70 80 nC 100 QGate V SPW16N50C3 VGS 0.2 VDS max
0.8 VDS max
10 Forward characteristics of body diode
IF = f (VSD) parameter: Tj , tp = 10 µs VSD -1 10 0 10 1 10 2 10 A SPW16N50C3 IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%)
11 Avalanche SOA
IAR = f (tAR) par.: Tj ≤ 150 °C 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 µs tAR A IAR Tj(start) = 25°C Tj(start) = 125°C
12 Avalanche energy
EAS = f (Tj) par.: ID = 8 , V DD = 50 V 20 40 60 80 100 120 °C 160 Tj 0.1 0.2 0.3 mJ 0.5 EAS
13 Drain-source breakdown voltage
V(BR)DSS = f (Tj) -60 -20 20 60 100 °C 180 Tj 450 460 470 480 490 500 510 520 530 540 550 560 570 V 600 SPW16N50C3 V(BR)DSS
14 Avalanche power losses
PAR = f (f ) parameter: E AR =0.64mJ 10 2 10 3 10 4 10 5 10 6 Hz f 100 150 200 250 300 350 W 450 PAR 15 Typ. capacitances C = f (VDS ) parameter: V GS =0V, f=1 MHz 0 100 200 300 V 500 VDS 0 10 1 10 2 10 3 10 4 10 pF C Crss Ciss Coss 16 Typ. C oss stored energy Eoss=f(VDS ) 0 100 200 300 V 500 VDS µJ Eoss
Definition of diodes switching characteristics
6.35 15.9 6.17 9.91 20.9 4.37 5.94 ø3.61 2.97 x 0.127 1.2 2.92 5.46 2.03 5.03 0.762 MAX. 2.4+0.05 41.22 20˚ D 7 D 1.75 1.14 0.243 General tolerance unless otherwise specified: Leadframe parts: ±0.05 Package parts: ±0.12
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