SPU30N03S2L-10 INFINEON | Alldatasheet

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Preliminary data SPU30N03S2L-10 OptiMOS/G01 Power-Transistor Product Summary VDS 30 V RDS(on) 10 m/G01 ID 30 A Feature /G02 N-Channel /G02 Logic Level /G02 Low on-resistance RDS(on) /G02 Excellent Gate Charge x RDS(on) product (FOM) /G01/G02 Superior thermal resistance /G02/G03 175°C operating temperature /G02 Avalanche rated /G02 dv/dt rated /G02/G03 Ideal for fast switching applications P-TO251 Marking 2N03L10 Type Package Ordering Code SPU30N03S2L-10 P-TO251 Q67042-S4042 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current TC=25°C,1) TC=100°C ID A Pulsed drain current TC=25°C ID puls 120 Avalanche energy, single pulse ID=30 A , VDD=25V, RGS=25/G01 EAS 150 mJ Reverse diode dv/dt IS=30A, VDS=24V, di/dt=200A/µs, Tjmax=175°C dv/dt 6 kV/µs Gate source voltage VGS ±20 V Power dissipation TC=25°C Ptot 82 W Operating and storage temperature Tj , Tstg -55... +175 °C IEC climatic category; DIN IEC 68-1 55/175/56

Preliminary data SPU30N03S2L-10 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 1.8 K/W Thermal resistance, junction - ambient, leaded RthJA - - 100 SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage VGS=0V, ID=1mA V(BR)DSS 30 - - V Gate threshold voltage, VGS = VDS ID=50µA VGS(th) 1.2 1,6 2 Zero gate voltage drain current VDS=30V, VGS=0V, Tj=25°C VDS=30V, VGS=0V, Tj=125°C IDSS 0.01 100 µA Gate-source leakage current VGS=20V, VDS=0V IGSS - 1 100 nA Drain-source on-state resistance VGS=4.5V, ID=30A RDS(on) - 11.6 14.6 m/G01 Drain-source on-state resistance VGS=10V, ID=30A RDS(on) - 8.1 10 1Current limited by bondwire; with a RthJC = 1.8 K/W the chip is able to carry ID = 64A and calculated with max. source pin temperature of 85°C. 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.

Preliminary data SPU30N03S2L-10 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs VDS/G02 2*ID*RDS(on)max , ID=30A 23.8 47.5 - S Input capacitance Ciss VGS=0V, VDS=25V, f=1MHz - 1170 1460 pF Output capacitance Coss - 490 610 Reverse transfer capacitance Crss - 125 155 Turn-on delay time td(on) VDD=15V, VGS=10V, ID=30A, RG=5.4/G01 - 6.1 9.2 ns Rise time tr - 63 94 Turn-off delay time td(off) - 27 41 Fall time tf - 17 26 Gate Charge Characteristics Gate to source charge Qgs VDD=24V, ID=30A - 3.8 4.3 nC Gate to drain charge Qgd - 10.8 16.2 Gate charge total Qg VDD=24V, ID=30A, VGS=0 to 10V - 31.5 39.4 Gate plateau voltage V(plateau) VDD=24V, ID=30A - 3.4 - V Reverse Diode Inverse diode continuous forward current IS TC=25°C - - 30 A Inverse diode direct current, pulsed ISM - - 120 Inverse diode forward voltage VSD VGS=0V, IF=30A - 0.9 1.2 V Reverse recovery time trr VR=-V, IF=lS, diF/dt=100A/µs - 25.5 38 ns Reverse recovery charge Qrr - 26.5 40 nC

Preliminary data SPU30N03S2L-10

1 Power dissipation

Ptot = f (TC) 0 20 40 60 80 100 120 140 160 °C 190 TC W 100 SPU30N03S2L-10 Ptot

2 Drain current

ID = f (TC) parameter: VGS/G04 10 V 0 20 40 60 80 100 120 140 160 °C 190 TC A SPU30N03S2L-10 ID

3 Safe operating area

ID = f ( VDS ) parameter : D = 0 , TC = 25 °C 10 -1 10 0 10 1 10 2 V VDS 0 10 1 10 2 10 3 10 A SPU30N03S2L-10 ID R DS(on) = V DS / I D DC 10 ms 1 ms 100 µs 10 µs tp = 7.9µs

4 Transient thermal impedance

ZthJC = f (tp) parameter : D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -4 10 -3 10 -2 10 -1 10 0 10 1 10 K/W SPU30N03S2L-10 ZthJC single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50

Preliminary data SPU30N03S2L-10 5 Typ. output characteristic ID = f (VDS); Tj=25°C parameter: tp = 80 µs VDS A ID a b cde VGS[V]= a= 3.5 b= 4.0 c= 4.5 d= 5.0 e= 5.5 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: VGS 0 10 20 30 40 50 A 70 ID m/G01 RDS(on) a b c d e VGS[V]= a= 3.5 b= 4.0 c= 4.5 d= 5.0 e= 5.5 7 Typ. transfer characteristics ID= f ( VGS ); VDS/G04 2 x ID x RDS(on)max parameter: tp = 80 µs 0 0.5 1 1.5 2 2.5 3 3.5 4 V 5 VGS A ID 8 Typ. forward transconductance gfs = f(ID); Tj=25°C parameter: gfs 0 10 20 30 40 A 60 ID S gfs

Preliminary data SPU30N03S2L-10

9 Drain-source on-state resistance

RDS(on) = f (Tj) parameter : ID = 30 A, VGS = 10 V -60 -20 20 60 100 140 °C 200 Tj /G01 SPU30N03S2L-10 RDS(on) typ 98% 10 Typ. gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS -60 -20 20 60 100 °C 180 Tj 0.5 1.5 V 2.5 VGS(th) min typ max 11 Typ. capacitances C = f (VDS) parameter: VGS=0V, f=1 MHz 0 5 10 15 20 V 30 VDS 2 10 3 10 4 10 pF C Coss Crss Ciss 12 Forward character. of reverse diode IF = f (VSD) parameter: Tj , tp = 80 µs VSD 0 10 1 10 2 10 3 10 A SPU30N03S2L-10 IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 175 °C typ Tj = 175 °C (98%)

Preliminary data SPU30N03S2L-10 13 Typ. avalanche energy EAS = f (Tj) par.: ID = 30 A , VDD = 25 V, RGS = 25 /G01 25 45 65 85 105 125 145 °C 185 Tj 100 120 mJ 160 EAS 14 Typ. gate charge VGS = f (QGate) parameter: ID = 30 A pulsed 0 5 10 15 20 25 30 35 40 nC 50 QGate V SPU30N03S2L-10 VGS 0,8 VDS max DS maxV0,2

15 Drain-source breakdown voltage

V(BR)DSS = f (Tj) parameter: ID=10 mA -60 -20 20 60 100 140 °C 200 Tj V SPU30N03S2L-10 V(BR)DSS

Preliminary data SPU30N03S2L-10 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Further information Please notice that the part number is BSPU30N03S2L-10, for simplicity the device is referred to by the term SPU30N03S2L-10 throughout this documentation.