SPU30N03S2-08 INFINEON | Alldatasheet

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Technical content

OptiMOSâ Power-Transistor Product Summary VDS 30 V RDS(on) 8.2 mW ID 30 A Feature

  • N-Channel
  • Enhancement mode
  • Low On-Resistance RDS(on)
  • Excellent Gate Charge x RDS(on) product (FOM)
  • Superior thermal resistance
  • 175°C operating temperature
  • Avalanche rated
  • dv/dt rated P- TO251 -3-1 Marking 2N0308 Type Package Ordering Code SPU30N03S2-08 P- TO251 -3-1 Q67042-S4140 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current1) TC=25°C1) ID A Pulsed drain current TC=25°C ID puls 120 Avalanche energy, single pulse ID=30 A , VDD=25V, RGS=25W EAS 250 mJ Repetitive avalanche energy, limited by Tjmax2) EAR 12 Reverse diode dv/dt IS=30A, VDS=24V, di/dt=200A/µs, Tjmax=175°C dv/dt 6 kV/µs Gate source voltage VGS ±20 V Power dissipation TC=25°C Ptot 125 W Operating and storage temperature Tj , Tstg -55... +175 °C IEC climatic category; DIN IEC 68-1 55/175/56

Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 1.2 K/W Thermal resistance, junction - ambient, leaded RthJA - - 100 SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage VGS=0V, ID=1mA V(BR)DSS 30 - - V Gate threshold voltage, VGS = VDS ID=85µA VGS(th) 2.1 3 4 Zero gate voltage drain current VDS=30V, VGS=0V, Tj=25°C VDS=30V, VGS=0V, Tj=125°C IDSS 0.01 100 µA Gate-source leakage current VGS=20V, VDS=0V IGSS - 1 100 nA Drain-source on-state resistance VGS=10V, ID=30A RDS(on) - 6.3 8.2 mW 1Current limited by bondwire; with an RthJC = 1.2 K/W the chip is able to carry ID = 100A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos. 2Defined by design. Not subject to production test. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.

Electrical Characteristics

Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs VDS³2*ID*RDS(on)max , ID=30A 25 50 - S Input capacitance Ciss VGS=0V, VDS =25V, f=1MHz - 1630 2170 pF Output capacitance Coss - 750 996 Reverse transfer capacitance Crss - 155 230 Turn-on delay time td(on) VDD=15V, VGS=10V, ID=30A, RG=6.8W - 11.2 16.7 ns Rise time tr - 17 26 Turn-off delay time td(off) - 22.8 34.6 Fall time tf - 14.8 22.2 Gate Charge Characteristics Gate to source charge Qgs VDD =24V, ID=30A - 7.9 10.5 nC Gate to drain charge Qgd - 14.1 21.1 Gate charge total Qg VDD =24V, ID=30A, VGS=0 to 10V - 35 47 Gate plateau voltage V(plateau) VDD =24V, ID=30A - 4.7 - V Reverse Diode Inverse diode continuous forward current IS TC=25°C - - 30 A Inv. diode direct current, pulsed ISM - - 120 Inverse diode forward voltage VSD VGS=0V, IF=30A - 0.9 1.2 V Reverse recovery time trr VR=15V, IF=lS, diF/dt=100A/µs - 41 51 ns Reverse recovery charge Qrr - 46 58 nC

1 Power dissipation

Ptot = f (TC) parameter: VGS³ 6 V 0 20 40 60 80 100 120 140 160 °C 190 TC 100 110 120 W 140 SPU30N03S2-08 Ptot

2 Drain current

ID = f (TC) parameter: VGS³ 10 V 0 20 40 60 80 100 120 140 160 °C 190 TC A

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4 Max. transient thermal impedance ZthJC = f (tp) parameter : D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -4 10 -3 10 -2 10 -1 10 0 10 1 10 K/W SPU30N03S2-08 ZthJC single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50

3 Safe operating area

ID = f ( VDS ) parameter : D = 0 , TC = 25 °C 10 -1 10 0 10 1 10 2 V VDS 0 10 1 10 2 10 3 10 A SPU30N03S2-08 ID R DS(on) V DS / I D 1 ms 100 µs tp = 14.0µs

5 Typ. output characteristic ID = f (VDS); Tj=25°C parameter: tp = 80 µs 0 0.5 1 1.5 2 2.5 3 3.5 4 V 5 VDS A SPU30N03S2-08 ID VGS [V] a a 4.2 b b 4.5 c c 4.8 d d 5.0 e e 5.2f f 5.5 g g 5.8 h h 6.0 i Ptot = 125W i 10.0 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: VGS 0 10 20 30 40 A 55 ID mW SPU30N03S2-08 R DS(on) VGS [V] = d d 5.0 e e 5.2 f f 5.5 g g 5.8 h h 6.0 i i 10.0 7 Typ. transfer characteristics ID= f ( VGS ); VDS³ 2 x ID x RDS(on)max parameter: tp = 80 µs 0 1 2 3 4 5 V 6.5 VGS A 100 ID 8 Typ. forward transconductance gfs = f(ID); Tj=25°C parameter: gfs 0 20 40 60 80 A 120 ID S gfs

9 Drain-source on-state resistance

RDS(on) = f (Tj) parameter : ID = 30 A, VGS = 10 V -60 -20 20 60 100 140 °C 200 Tj mW

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R DS(on) typ 98% 10 Typ. gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS -60 -20 20 60 100 °C 180 Tj 0.5 1.5 2.5 V VGS(th) 83 mA 415 mA 11 Typ. capacitances C = f (VDS) parameter: VGS=0V, f=1 MHz 0 5 10 15 20 V 30 VDS 2 10 3 10 4 10 pF C Ciss Coss Crss 12 Forward character. of reverse diode IF = f (VSD) parameter: Tj , tp = 80 µs VSD 0 10 1 10 2 10 3 10 A SPU30N03S2-08 IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 175 °C typ Tj = 175 °C (98%)

13 Typ. avalanche energy EAS = f (Tj) par.: ID = 30 A , VDD = 25 V, RGS = 25 W 25 45 65 85 105 125 145 °C 185 Tj 100 120 140 160 180 200 220 mJ 260 EAS 14 Typ. gate charge VGS = f (QGate) parameter: ID = 30 A pulsed 0 10 20 30 40 nC 55 QGate V

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0,8 VDS max DS maxV0,2

15 Drain-source breakdown voltage

V(BR)DSS = f (Tj) parameter: ID=10 mA -60 -20 20 60 100 140 °C 200 Tj V

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V(BR)DSS

Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Further information Please notice that the part number is BSPU30N03S2-08, for simplicity the device is referred to by the term SPU30N03S2-08 throughout this documentation.