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Technical content

Features

  • N channel
  • Enhancement mode
  • Avalanche rated
  • dv/dt rated
  • 175˚C operating temperature Pin 1 Pin 2 Pin 3 G D S PackagingType Package Ordering Code SPD30N03 Tape and ReelP-TO252 Q67040-S4144-A2 SPU30N03 TubeQ67040-S4146-A2P-TO251-3-1 Maximum Ratings , at Tj = 25 ˚C, unless otherwise specified Parameter Symbol UnitValue Continuous drain current TC = 25 ˚C, 1) TC = 100 ˚C ID A Pulsed drain current TC = 25 ˚C IDpulse 120 Avalanche energy, single pulse ID = 30 A, VDD = 25 V, R GS = 25 Ω mJEAS 250 Avalanche energy, periodic limited by Tjmax 12 EAR Reverse diode dv/dt IS = 30 A, VDS = 24 V, di/dt = 200 A/µs, Tjmax = 175 ˚C dv/dt 6 kV/µs Gate source voltage VGS ±20 V Power dissipation TC = 25 ˚C Ptot 120 W Operating and storage temperature Tj , Tstg ˚C-55... +175 55/175/56IEC climatic category; DIN IEC 68-1 SPD 30N03

Data Sheet 2 05.99 Thermal Characteristics Parameter ValuesSymbol Unit typ. max.min. Characteristics R thJC - 1.25 K/WThermal resistance, junction - case -Thermal resistance, junction - ambient, leded R thJA - 100 SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area2) R thJA Electrical Characteristics, at Tj = 25 ˚C, unless otherwise specified Parameter Symbol UnitValues min. max.typ. Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA -V(BR)DSS 30 - V Gate threshold voltage, VGS = VDS ID = 80 µA VGS(th) 432.1 Zero gate voltage drain current VDS = 30 V, VGS = 0 V, Tj = 25 ˚C VDS = 30 V, VGS = 0 V, Tj = 150 ˚C IDSS µA 100 0.1 Gate-source leakage current VGS = 20 V, VDS = 0 V IGSS - 10 nA100 Drain-Source on-state resistance VGS = 10 V, ID = 30 A R DS(on) - 0.0085 0.015 Ω 1current limited by bond wire 2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air.

Data Sheet 3 05.99 Electrical Characteristics, at Tj = 25 ˚C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Transconductance VDS ≥2*ID *R DS(on)max , ID = 30 A gfs 18 34 - S Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz C iss - 1400 1750 pF Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz C oss - 645 810 Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz C rss - 260 325 Turn-on delay time VDD = 15 V, V GS = 10 V, ID = 30 A, R G = 6.8 Ω td(on) - 20 30 ns Rise time VDD = 15 V, V GS = 10 V, ID = 30 A, R G = 6.8 Ω tr - 35 52 Turn-off delay time VDD = 15 V, V GS = 10 V, ID = 30 A, R G = 6.8 Ω td(off) - 50 75 Fall time VDD = 15 V, V GS = 10 V, ID = 30 A, R G = 6.8 Ω tf - 45 65

Data Sheet 4 05.99 Electrical Characteristics, at Tj = 25 ˚C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Gate to source charge VDD = 24 V, ID = 30 A 7.5 nC5Q gs - - 19Q gdGate to drain charge VDD = 24 V, ID = 30 A 28.5 Gate charge total VDD = 24 V, ID = 30 A, VGS = 0 to 10 V - 39 60Q g Gate plateau voltage VDD = 24 V, ID = 30 A V(plateau) 4.8 - V- Reverse Diode Inverse diode continuous forward current TC = 25 ˚C IS - - 30 A Inverse diode direct current,pulsed TC = 25 ˚C ISM - - 120 Inverse diode forward voltage VGS = 0 V, IF = 60 A VSD - 1 V1.6 Reverse recovery time VR = 15 V, IF=IS , diF/dt = 100 A/µs trr - 40 ns60 Reverse recovery charge VR = 15 V, IF=lS , diF/dt = 100 A/µs Q rr - µC0.035 0.052

Data Sheet 5 05.99 Power Dissipation Ptot = f (TC ) 0 20 40 60 80 100 120 140 160 ˚C 190 TC 100 110 W 130 SPD30N03 Ptot Drain current ID = f (TC ) parameter: VGS ≥ 10 V 0 20 40 60 80 100 120 140 160 ˚C 190 TC A SPD30N03 ID Transient thermal impedance ZthJC = f (tp) parameter : D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 K/W SPD30N03 ZthJC single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50 Safe operating area ID = f (V DS ) parameter : D = 0 , TC = 25 ˚C 10 -1 10 0 10 1 10 2 V VDS 0 10 1 10 2 10 3 10 A SPD30N03 ID R DS(on) V DS / I D DC 10 ms 1 ms 100 µs tp = 65.0µs

Data Sheet 6 05.99 Typ. output characteristics ID = f (VDS ) parameter: tp = 80 µs VDS A SPD30N03 ID VGS [V] a a 4.0 b b 4.5 c c 5.0 d d 5.5 e e 6.0 f 6.5 g g 7.0 h 7.5 i 8.0 j j 9.0 k k 10.0 l Ptot = 120W l 20.0 Typ. drain-source-on-resistance R DS(on) = f (ID ) parameter: V GS 0 10 20 30 40 50 A 65 ID 0.000 0.005 0.010 0.015 0.020 0.025 0.030 0.035 0.040 Ω 0.050 SPD30N03 R DS(on) VGS [V] = a a 4.0 b b 4.5 c c 5.0 d d 5.5 e e 6.0 f f 6.5 g g 7.0 h h 7.5 i i 8.0 j j 9.0 k k 10.0 l l 20.0 Typ. transfer characteristics ID= f (VGS ) parameter: tp = 80 µs VDS ≥ 2 x ID x R DS(on) max VGS A ID Typ. forward transconductance gfs = f(ID ); Tj = 25˚C parameter: gfs 0 10 20 30 40 A 60 ID S gfs

Data Sheet 7 05.99 Drain-source on-resistance RDS(on) = f (Tj) parameter : ID = 30 A, VGS = 10 V -60 -20 20 60 100 140 ˚C 200 Tj 0.000 0.004 0.008 0.012 0.016 0.020 0.024 0.028 Ω 0.036 SPD30N03 R DS(on) typ 98% Gate threshold voltage VGS(th) = f (Tj) parameter : VGS = V DS , ID = 80 µA -60 -20 20 60 100 140 ˚C 200 Tj 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 V 5.0 VGS(th) min typ max Typ. capacitances C = f (VDS ) parameter: V GS = 0 V, f = 1 MHz 0 4 8 12 16 20 24 28 32 V 40 VDS 2 10 3 10 4 10 pF C 0 4 8 12 16 20 24 28 32 V 40 VDS 2 10 3 10 4 10 pF C Ciss Coss Crss Forward characteristics of reverse diode IF = f (VSD ) parameter: Tj , tp = 80 µs VSD 0 10 1 10 2 10 3 10 A SPD30N03 IF Tj = 25 ˚C typ Tj = 25 ˚C (98%) Tj = 175 ˚C typ Tj = 175 ˚C (98%)

Data Sheet 8 05.99 Typ. gate charge VGS = f (Q Gate) parameter: ID puls = 30 A 0 10 20 30 40 nC 60 Q Gate V SPD30N03 VGS DS maxV0,8 DS maxV0,2 Avalanche Energy EAS = f (Tj) parameter: ID = 30 A, V DD = 25 V R GS = 25 Ω 20 40 60 80 100 120 140 ˚C 180 Tj 100 150 mJ 250 EAS Drain-source breakdown voltage V(BR)DSS = f (Tj) -60 -20 20 60 100 140 ˚C 200 Tj V SPD30N03 V(BR)DSS