SPD28N03 INFINEON | Alldatasheet

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Technical content

Features

  • N channel
  • Enhancement mode
  • Avalanche rated
  • dv/dt rated
  • 175˚C operating temperature Pin 1 Pin 2 Pin 3 G D S PackagingType Package Ordering Code SPD28N03 Tape and ReelP-TO252 Q67040-S4138 SPU28N03 TubeQ67040-S4140-A2P-TO251-3-1 Maximum Ratings , at Tj = 25 ˚C, unless otherwise specified Parameter Symbol UnitValue Continuous drain current TC = 25 ˚C, 1) TC = 100 ˚C ID A Pulsed drain current TC = 25 ˚C IDpulse 112 Avalanche energy, single pulse ID = 28 A, VDD = 25 V, R GS = 25 Ω mJEAS 145 Avalanche energy, periodic limited by Tjmax 7.5 EAR Reverse diode dv/dt IS = 28 A, VDS = 24 V, di/dt = 200 A/µs, Tjmax = 175 ˚C dv/dt 6 kV/µs Gate source voltage VGS ±20 V Power dissipation TC = 25 ˚C Ptot 75 W Operating and storage temperature Tj , Tstg ˚C-55... +175 55/175/56IEC climatic category; DIN IEC 68-1

Data Sheet 2 06.99 Thermal Characteristics Parameter ValuesSymbol Unit typ. max.min. Characteristics R thJC - 2 K/WThermal resistance, junction - case -Thermal resistance, junction - ambient, leded R thJA - 100 SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area2) R thJA Electrical Characteristics, at Tj = 25 ˚C, unless otherwise specified Parameter Symbol UnitValues min. max.typ. Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA -V(BR)DSS 30 - V Gate threshold voltage, VGS = VDS ID = 50 µA VGS(th) 432.1 Zero gate voltage drain current VDS = 30 V, VGS = 0 V, Tj = 25 ˚C VDS = 30 V, VGS = 0 V, Tj = 150 ˚C IDSS µA 100 0.1 Gate-source leakage current VGS = 20 V, VDS = 0 V IGSS - 10 nA100 Drain-Source on-state resistance VGS = 10 V, ID = 28 A R DS(on) - 0.014 0.023 Ω 1current limited by bond wire 2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air.

Data Sheet 3 06.99 Electrical Characteristics, at Tj = 25 ˚C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Transconductance VDS ≥2*ID *R DS(on)max , ID = 28 A gfs 10 23 - S Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz C iss - 860 1075 pF Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz C oss - 450 565 Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz C rss - 195 245 Turn-on delay time VDD = 15 V, V GS = 10 V, ID = 28 A, R G = 12 Ω td(on) - 16 24 ns Rise time VDD = 15 V, V GS = 10 V, ID = 28 A, R G = 12 Ω tr - 38 57 Turn-off delay time VDD = 15 V, V GS = 10 V, ID = 28 A, R G = 12 Ω td(off) - 35 53 Fall time VDD = 15 V, V GS = 10 V, ID = 28 A, R G = 12 Ω tf - 36 54

Data Sheet 4 06.99 Electrical Characteristics, at Tj = 25 ˚C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Gate to source charge VDD = 24 V, ID = 28 A 6 nC4Q gs - - 13.6Q gdGate to drain charge VDD = 24 V, ID = 28 A Gate charge total VDD = 24 V, ID = 28 A, VGS = 0 to 10 V - 25 38Q g Gate plateau voltage VDD = 24 V, ID = 28 A V(plateau) 5.6 - V- Reverse Diode Inverse diode continuous forward current TC = 25 ˚C IS - - 28 A Inverse diode direct current,pulsed TC = 25 ˚C ISM - - 112 Inverse diode forward voltage VGS = 0 V, IF = 56 A VSD - 1.1 V1.7 Reverse recovery time VR = 15 V, IF=IS , diF/dt = 100 A/µs trr - 38 ns57 Reverse recovery charge VR = 15 V, IF=lS , diF/dt = 100 A/µs Q rr - µC0.032 0.048

Data Sheet 5 06.99 Power Dissipation Ptot = f (TC ) 0 20 40 60 80 100 120 140 160 ˚C 190 TC W SPD28N03 Ptot Drain current ID = f (TC ) parameter: VGS ≥ 10 V 0 20 40 60 80 100 120 140 160 ˚C 190 TC A SPD28N03 ID Transient thermal impedance ZthJC = f (tp) parameter : D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -4 10 -3 10 -2 10 -1 10 0 10 1 10 K/W SPD28N03 ZthJC single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50 Safe operating area ID = f (V DS ) parameter : D = 0 , TC = 25 ˚C 10 -1 10 0 10 1 10 2 V VDS 0 10 1 10 2 10 3 10 A SPD28N03 ID R DS(on) V DS / I D DC 10 ms 1 ms 100 µs tp = 28.0µs

Data Sheet 6 06.99 Typ. output characteristics ID = f (VDS ) parameter: tp = 80 µs VDS A SPD28N03 ID VGS [V] a a 4.0 b b 4.5 c c 5.0 d d 5.5 e e 6.0 f f 6.5 g g 7.0 h h 7.5 i i 8.0 j j 8.5 k k 9.0 l Ptot = 75W l 10.0 Typ. drain-source-on-resistance R DS(on) = f (ID ) parameter: V GS 0 10 20 30 40 A 55 ID 0.000 0.005 0.010 0.015 0.020 0.025 0.030 0.035 0.040 0.045 0.050 0.055 0.060 Ω 0.075 SPD28N03 R DS(on) VGS [V] = b b 4.5 c c 5.0 d d 5.5 e e 6.0 f f 6.5 g g 7.0 h h 7.5 i i 8.0 j j 8.5 k k 9.0 l l 10.0 Typ. transfer characteristics ID= f (VGS ) parameter: tp = 80 µs VDS ≥ 2 x ID x R DS(on) max 2 4 6 V 10 VGS A ID Typ. forward transconductance gfs = f(ID ); Tj = 25˚C parameter: gfs 0 5 10 15 20 25 30 A 40 ID S gfs

Data Sheet 7 06.99 Drain-source on-resistance RDS(on) = f (Tj) parameter : ID = 28 A, VGS = 10 V -60 -20 20 60 100 140 ˚C 200 Tj 0.000 0.005 0.010 0.015 0.020 0.025 0.030 0.035 0.040 0.045 0.050 Ω 0.060 SPD28N03 R DS(on) typ 98% Gate threshold voltage VGS(th) = f (Tj) parameter : VGS = V DS , ID = 50 µA -60 -20 20 60 100 140 ˚C 200 Tj 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 V 5.0 VGS(th) min typ max Typ. capacitances C = f (VDS ) parameter: V GS = 0 V, f = 1 MHz 0 5 10 15 20 25 V 35 VDS 500 1000 pF 2000 C Ciss Coss Crss Forward characteristics of reverse diode IF = f (VSD ) parameter: Tj , tp = 80 µs VSD 0 10 1 10 2 10 3 10 A SPD28N03 IF Tj = 25 ˚C typ Tj = 25 ˚C (98%) Tj = 175 ˚C typ Tj = 175 ˚C (98%)

Data Sheet 8 06.99 Typ. gate charge VGS = f (Q Gate) parameter: ID puls = 28 A 0 4 8 12 16 20 24 28 nC 36 Q Gate V SPD28N03 VGS DS maxV0,8 DS maxV0,2 Avalanche Energy EAS = f (Tj) parameter: ID = 28 A, V DD = 25 V R GS = 25 Ω 20 40 60 80 100 120 140 ˚C 180 Tj 100 mJ 150 EAS Drain-source breakdown voltage V(BR)DSS = f (Tj) -60 -20 20 60 100 140 ˚C 200 Tj V SPD28N03 V(BR)DSS