SPD08P06P INFINEON | Alldatasheet

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/c183 P-Channel /c183 Enhancement mode /c183 Avalanche rated /c183 dv/dt rated /c183/c32 175°C operating temperature Product Summary Drain source voltage VVDS -60 Drain-source on-state resistanceR DS(on) 0.3 /c87 Continuous drain current AID -8.8 Type Package Ordering Code SPD08P06P P-TO252 Q67040-S4153 SPU08P06P P-TO251-3-1 Q67040-S4154 Pin 1 PIN 2/4 PIN 3 G D S Maximum Ratings ,at Tj = 25 °C, unless otherwise specified Parameter Symbol UnitValue -8.8 -6.2 Continuous drain current TC = 25 °C TC = 100 °C AID Pulsed drain current TC = 25 °C ID puls -35.2 Avalanche energy, single pulse ID = -8.8 A , VDD = -25 V, R GS = 25 /c87 70 mJEAS Avalanche energy, periodic limited by Tjmax EAR 4.2 dv/dt 6Reverse diode dv/dt IS = -8.8 A, V DS = -48 , di/dt = 200 A/µs, Tjmax = 175 °C kV/µs Gate source voltage VGS ±20 V Power dissipation TC = 25 °C Ptot 42 W Operating and storage temperature Tj , Tstg -55...+175 °C IEC climatic category; DIN IEC 68-1 55/175/56

Parameter Symbol UnitValues min. max.typ. Characteristics RthJC - 3.6-Thermal resistance, junction - case K/W - 100RthJAThermal resistance, junction - ambient, leaded - SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = -250 µA V(BR)DSS -60 - V- Gate threshold voltage, VGS = VDS ID = -250 µA, Tj = 25 °C -2.1 -3 -4VGS(th) Zero gate voltage drain current VDS = -60 V, V GS = 0 V, Tj = 25 °C VDS = -60 V, V GS = 0 V, Tj = 150 °C µA -100 IDSS -0.1 -10 IGSS - -10 -100Gate-source leakage current VGS = -20 V, VDS = 0 V nA Drain-source on-state resistance VGS = -10 V, ID = -6.2 A RDS(on) - 0.23 0.3 /c87 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Transconductance VDS /c179 2*ID*R DS(on)max , ID = -6.2 A 1.5gfs S-3.6 Input capacitance VGS = 0 V, V DS = -25 V, f = 1 MHz Ciss 335 420 pF- Coss - 135105Output capacitance VGS = 0 V, V DS = -25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, V DS = -25 V, f = 1 MHz 9565Crss - Turn-on delay time VDD = -30 V, V GS = -10 V, ID = -6.2 A, R G = 6 /c87 - 24 ns16td(on) Rise time VDD = -30 V, V GS = -10 V, ID = -6.2 A, R G = 6 /c87 tr - 6946 48 72td(off)Turn-off delay time VDD = -30 V, V GS = -10 V, ID = -6.2 A, R G = 6 /c87 Fall time VDD = -30 V, V GS = -10 V, ID = -6.2 A, R G = 6 /c87 tf - 14 21

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified UnitValuesSymbolParameter min. typ. max. Dynamic Characteristics Gate to source charge VDD = -48 , ID = -8.8 A -Q gs nC2.11.4 Gate to drain charge VDD = -48 V, ID = -8.8 A Q gd 4 6- 15-Q gGate charge total VDD = -48 V, ID = -8.8 A, VGS = 0 to -10 V Gate plateau voltage VDD = -48 , ID = -8.8 A V(plateau) - -3.85 - V Parameter Symbol Values Unit min. typ. max. Reverse Diode Inverse diode continuous forward current TC = 25 °C IS - - -8.8 A Inverse diode direct current,pulsed TC = 25 °C ISM - - -35.2 Inverse diode forward voltage VGS = 0 V, IF = -8.8 A Reverse recovery time VR = -30 V, IF=IS , diF/dt = 100 A/µs trr - 60 90 ns Reverse recovery charge VR = -30 V, IF=lS , diF/dt = 100 A/µs Q rr - 100 150 nC

ID = f (TC ) parameter: VGS /c179 10 V 0 20 40 60 80 100 120 140 160°C 190 TC A -10 SPD08P06P ID Power dissipation Ptot = f (TC ) 0 20 40 60 80 100 120 140 160°C 190 TC W SPD08P06P Ptot Transient thermal impedance ZthJC = f (tp) parameter : D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -4 10 -3 10 -2 10 -1 10 0 10 1 10 K/W SPD08P06P ZthJC single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC = 25 °C -10 -1 -10 0 -10 1 -10 2 V VDS -1 -10 0 -10 1 -10 2 -10 A SPD08P06P ID R DS(on) = V DS / I D DC 10 ms 1 ms 100 µs tp = 12.0µs

Typ. drain-source-on-resistance RDS(on) = f (ID ) parameter: VGS ID 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 /c87 1.0 SPD08P06P R DS(on) a VGS [V] = a -4.0 b b -4.5 c c -5.0 d d -5.5 e e -6.0 f f -6.5 g g -7.0 h h -7.5 ii -8.0 jj -10.0 Typ. output characteristic ID = f (VDS ); Tj=25°C parameter: tp = 80 µs VDS -10 -12 -14 -16 -18 A -21 SPD08P06P ID VGS [V] a a -4.0 b b -4.5 c c -5.0 d d -5.5 e e -6.0 f f -6.5 g g -7.0 h h -7.5 i i -8.0 j Ptot = 42.00W j -10.0 Typ. transfer characteristics ID= f ( VGS ) VDS /c179 2 x ID x R DS(on)max parameter: tp = 80 µs VGS -10 -12 -14 -16 -18 -20 -22 -24 A -30 ID Typ. forward transconductance gfs = f(ID ); Tj=25°C parameter: gfs ID S gfs

Drain-source on-state resistance R DS(on) = f (Tj) parameter : ID = -6.2 A, V GS = -10 V -60 -20 20 60 100 140 °C 200 Tj 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 /c87 1.0 SPD08P06P R DS(on) typ 98% Gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS , ID = -250 µA -60 -20 20 60 100 °C 180 Tj 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V -5.0 V GS(th) -60 -20 20 60 100 °C 180 Tj 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V -5.0 V GS(th) typ -60 -20 20 60 100 °C 180 Tj 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V -5.0 V GS(th) 98% -60 -20 20 60 100 °C 180 Tj 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V -5.0 V GS(th) Typ. capacitances C = f (VDS ) parameter: VGS =0V, f=1 MHz 0 -5 -10 -15 -20 -25 -30 V -40 VDS 1 10 2 10 3 10 pF C C iss C oss C rss Forward characteristics of reverse diode IF = f (VSD ) parameter: Tj , tp = 80 µs VSD -1 -10 0 -10 1 -10 2 -10 A SPD08P06P IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 175 °C typ Tj = 175 °C (98%)

EAS = f (Tj) para.: ID = -8.8 A , VDD = -25 V, R GS = 25 /c87 25 45 65 85 105 125 145 °C 185 Tj mJ E AS Typ. gate charge VGS = f (Q Gate) parameter: ID = -8.8 A pulsed 0 2 4 6 8 10 12 nC 15 Q Gate -10 -12 V -16 SPD08P06P VGS DS maxV0,8 DS maxV0,2 Drain-source breakdown voltage V(BR)DSS = f (Tj) -60 -20 20 60 100 140 °C 200 Tj -54 -56 -58 -60 -62 -64 -66 -68 V -72 SPD08P06P V(BR)DSS

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