SPD08N05L INFINEON | Alldatasheet

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Technical content

Features

  • N channel
  • Enhancement mode
  • Avalanche rated
  • Logic Level
  • dv/dt rated
  • 175˚C operating temperature Pin 1 Pin 2 Pin 3 G D S Packaging Type Package Ordering Code SPD08N05L Tape and Reel P-TO252 Q67040-S4134 SPU08N05L Tube Q67040-S4182-A2 P-TO251 MaximumRatings , at Tj = 25 ˚C, unless otherwise specified Parameter Symbol Unit Value Continuous drain current TC = 25 ˚C TC = 100 ˚C 8.4 5.9 ID A Pulsed drain current TC = 25 ˚C IDpulse Avalanche energy, single pulse ID = 8.4 A, VDD = 25 V, RGS = 25 Ω mJ EAS Avalanche energy, periodic limited by Tjmax 2.4 EAR Reverse diode dv/dt IS = 8.4 A, VDS = 40 V, di/dt = 200 A/µs, Tjmax = 175 ˚C dv/dt kV/µs Gate source voltage VGS ±20 V Power dissipation TC = 25 ˚C Ptot W Operating and storage temperature Tj , Tstg -55... +175 55/175/56 IEC climatic category; DIN IEC 68-1

06.99 Thermal Characteristics Parameter Values Symbol Unit typ. max. min. Characteristics RthJC 6.25 K/W Thermal resistance, junction - case Thermal resistance, junction - ambient, leded RthJA 100 SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area1) RthJA Electrical Characteristics, at Tj = 25 ˚C, unless otherwise specified Parameter Symbol Unit Values min. max. typ. Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA V(BR)DSS V Gate threshold voltage, VGS = VDS ID = 10 µA VGS(th) 1.6 1.2 Zero gate voltage drain current VDS = 50 V, VGS = 0 V, Tj = 25 ˚C VDS = 50 V, VGS = 0 V, Tj = 150 ˚C IDSS µA 100 0.1 Gate-source leakage current VGS = 20 V, VDS = 0 V IGSS nA 100 Drain-Source on-state resistance VGS = 4.5 V, ID = 5.9 A VGS = 10 V, ID = 5.9 A RDS(on) 0.125 0.08 0.15 0.1 Ω 1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air.

06.99 Electrical Characteristics, at Tj = 25 ˚C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Transconductance VDS≥2*ID*RDS(on)max , ID = 5.9 A gfs 6.2 S Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Ciss 250 315 pF Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Coss 100 Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Crss Turn-on delay time VDD = 30 V, VGS = 4.5 V, ID = 8.4 A, RG = 25 Ω td(on) ns Rise time VDD = 30 V, VGS = 4.5 V, ID = 8.4 A, RG = 25 Ω tr Turn-off delay time VDD = 30 V, VGS = 4.5 V, ID = 8.4 A, RG = 25 Ω td(off) Fall time VDD = 30 V, VGS = 4.5 V, ID = 8.4 A, RG = 25 Ω tf

06.99 Electrical Characteristics, at Tj = 25 ˚C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Gate to source charge VDD = 40 V, ID = 8.4 A 1.5 nC Qgs 3.5 Qgd Gate to drain charge VDD = 40 V, ID = 8.4 A 5.4 Gate charge total VDD = 40 V, ID = 8.4 A, VGS = 0 to 10 V Qg Gate plateau voltage VDD = 40 V, ID = 8.4 A V(plateau) V Reverse Diode Inverse diode continuous forward current TC = 25 ˚C IS 8.4 A Inverse diode direct current,pulsed TC = 25 ˚C ISM Inverse diode forward voltage VGS = 0 V, IF = 16.8 A VSD 1.05 V 1.8 Reverse recovery time VR = 30 V, IF=IS , diF/dt = 100 A/µs trr ns Reverse recovery charge VR = 30 V, IF=lS , diF/dt = 100 A/µs Qrr µC 0.085 0.13

06.99 Power Dissipation Ptot = f (TC) 100 120 140 160 ˚C 190 TC W SPD08N05L Ptot Drain current ID = f (TC) parameter: VGS ≥ 10 V 100 120 140 160 ˚C 190 TC A SPD08N05L ID Transient thermal impedance ZthJC = f (tp) parameter : D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp K/W SPD08N05L ZthJC single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50 Safe operating area ID = f (VDS) parameter : D = 0 , TC = 25 ˚C 10 -1 10 0 10 1 10 2 V VDS A SPD08N05L ID R DS(on) = V DS / I D DC 10 ms 1 ms 100 µs 10 µs tp = 2.7µs

06.99 Typ. output characteristics ID = f (VDS) parameter: tp = 80 µs 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 VDS A SPD08N05L ID VGS [V] a a 2.5 b b 3.0 c c 3.5 d d 4.0 e e 4.5 f f 5.0 g g 5.5 h h 6.0 i i 6.5 j j 7.0 k k 8.0 l Ptot = 24W l 10.0 Typ. drain-source-on-resistance RDS(on) = f (ID) parameter: VGS A ID 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 Ω 0.50 SPD08N05L RDS(on) VGS [V] = b b 3.0 c c 3.5 d d 4.0 e e 4.5 f f 5.0 g g 5.5 h h 6.0 i i 6.5 j j 7.0 k k 8.0 l l 10.0 Typ. transfer characteristics ID= f (VGS) parameter: tp = 80 µs VDS ≥ 2 x ID x RDS(on)max V VGS A ID Typ. forward transconductance gfs = f(ID); Tj = 25˚C parameter: gfs A ID S gfs

06.99 Drain-source on-resistance RDS(on) = f (Tj) parameter : ID = 5.9 A, VGS = 4.5 V -60 -20 100 140 200 Tj 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 Ω 0.55 SPD08N05L RDS(on) typ 98% Gate threshold voltage VGS(th) = f (Tj) parameter : VGS = VDS, ID = 10 µA -60 -20 100 140 200 Tj 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 V 3.0 VGS(th) min typ max Typ. capacitances C = f (VDS) parameter: VGS = 0 V, f = 1 MHz V VDS pF C Ciss Coss Crss Forward characteristics of reverse diode IF = f (VSD) parameter: Tj , tp = 80 µs 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD A SPD08N05L IF Tj = 25 ˚C typ Tj = 25 ˚C (98%) Tj = 175 ˚C typ Tj = 175 ˚C (98%)

06.99 Typ. gate charge VGS = f (QGate) parameter: ID puls = 8.4 A nC QGate V SPD08N05L VGS DS max V 0,8 DS max V 0,2 Avalanche Energy EAS = f (Tj) parameter: ID = 8.4 A, VDD = 25 V RGS = 25 Ω 100 120 140 180 Tj mJ EAS Drain-source breakdown voltage V(BR)DSS = f (Tj) -60 -20 100 140 200 Tj V SPD08N05L V(BR)DSS