SPU07N60S5_08 INFINEON | Alldatasheet

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Technical content

2008-04-10Rev. 2.5 Page 1 SPU07N60S5 SPD07N60S5 Cool MOS™ Power Transistor VDS 600 V RDS(on) 0.6 Ω ID 7.3 A Feature

  • New revolutionary high voltage technology
  • Worldwide best RDS(on) in TO-251 and TO-252
  • Ultra low gate charge
  • Periodic avalanche rated
  • Extreme dv/dt rated
  • Ultra low effective capacitances
  • Improved transconductance PG-TO251PG-TO252 321 Type Package Ordering Code SPU07N60S5 PG-TO251 Q67040-S4196 SPD07N60S5 PG-TO252 Q67040-S4186 Marking 07N60S5 07N60S5 Maximum Ratings Parameter Symbol Value Unit Continuous drain current TC = 25 °C TC = 100 °C ID 7.3 4.6 A Pulsed drain current, tp limited by Tjmax ID puls 14.6 Avalanche energy, single pulse ID = - A, VDD = 50 V EAS 230 mJ Avalanche energy, repetitive tAR limited by Tjmax1) ID = 7.3 A, VDD = 50 V EAR 0.5 Avalanche current, repetitive tAR limited by Tjmax IAR 7.3 A Gate source voltage VGS ±20 V Gate source voltage AC (f >1Hz) VGS ±30 Power dissipation, TC = 25°C Ptot 83 W Operating and storage temperature Tj , Tstg -55... +150 °C

2008-04-10Rev. 2.5 Page 2 SPU07N60S5 SPD07N60S5 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope VDS = 480 V, ID = 7.3 A, Tj = 125 °C dv/dt 20 V/ns Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Thermal resistance, junction - case RthJC - - 1.5 K/W Thermal resistance, junction - ambient, leaded RthJA - - 75 SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) RthJA Soldering temperature, *) 1.6 mm (0.063 in.) from case for 10s Tsold - - 260 °C Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 600 - - V Drain-Source avalanche breakdown voltage V(BR)DS VGS=0V, ID=7.3A - 700 - Gate threshold voltage VGS(th) ID=350µΑ, VGS=VDS 3.5 4.5 5.5 Zero gate voltage drain current IDSS VDS=600V, VGS=0V, Tj=25°C, Tj=150°C 0.5 100 µA Gate-source leakage current IGSS VGS=20V, VDS=0V - - 100 nA Drain-source on-state resistance RDS(on) VGS=10V, ID=4.6A, Tj=25°C Tj=150°C 0.54 1.46 0.6 Ω Gate input resistance RG f=1MHz, open Drain - 19 - *) TO252: reflow soldering, MSL3; TO251: wavesoldering

2008-04-10Rev. 2.5 Page 3 SPU07N60S5 SPD07N60S5 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Characteristics Transconductance gfs VDS≥2*ID*RDS(on)max, ID=4.6A - 4 - S Input capacitance Ciss VGS=0V, VDS=25V, f=1MHz - 970 - pF Output capacitance Coss - 370 - Reverse transfer capacitance Crss - 10 - Effective output capacitance,3) energy related Co(er) VGS=0V, VDS=0V to 480V - 30 - pF Effective output capacitance,4) time related Co(tr) - 55 - Turn-on delay time td(on) VDD=350V, VGS=0/10V, ID=7.3A, RG=12Ω - 120 - ns Rise time tr - 40 - Turn-off delay time td(off) - 170 255 Fall time tf - 20 30 Gate Charge Characteristics Gate to source charge Qgs VDD=350V, ID=7.3A - 7.5 - nC Gate to drain charge Qgd - 16.5 - Gate charge total Qg VDD=350V, ID=7.3A, VGS=0 to 10V - 27 35 Gate plateau voltage V(plateau) VDD=350V, ID=7.3A - 8 - V 1Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f. 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 3Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. 4Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.

2008-04-10Rev. 2.5 Page 4 SPU07N60S5 SPD07N60S5 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Inverse diode continuous forward current IS TC=25°C - - 7.3 A Inverse diode direct current, pulsed ISM - - 14.6 Inverse diode forward voltage VSD VGS=0V, IF=IS - 1 1.2 V Reverse recovery time trr VR=350V, IF=IS , diF/dt=100A/µs - 750 1275 ns Reverse recovery charge Qrr - 4.9 - µC Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit typ. typ. Thermal resistance Rth1 0.024 K/W Rth2 0.046 Rth3 0.085 Rth4 0.308 Rth5 0.317 Rth6 0.112 Thermal capacitance Cth1 0.00012 Ws/K Cth2 0.0004578 Cth3 0.000645 Cth4 0.001867 Cth5 0.004795 Cth6 0.045 External HeatsinkTj Tcase Tamb Cth1 Cth2 Rth1 Rth,n Cth,n Ptot (t)

2008-04-10Rev. 2.5 Page 5 SPU07N60S5 SPD07N60S5

1 Power dissipation

Ptot = f (TC) 0 20 40 60 80 100 120 °C 160 TC W 100 SPU07N60S5 Ptot

2 Safe operating area

ID = f ( VDS ) parameter : D = 0 , TC=25°C 10 0 10 1 10 2 10 3 V VDS -210 -110 010 110 210 A ID tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC 3 Typ. output characteristic ID = f (VDS); Tj=25°C parameter: tp = 10 µs, VGS 0 5 10 15 V 25 VDS A ID 10V 12V 20V 4 Typ. output characteristic ID = f (VDS); Tj=150°C parameter: tp = 10 µs, VGS 0 5 10 15 V 25 VDS A ID 6.5V 7.5V 8.5V 20V 12V 10V

2008-04-10Rev. 2.5 Page 6 SPU07N60S5 SPD07N60S5 5 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150°C, VGS 0 2 4 6 8 10 A 14 ID 1.5 mΩ RDS(on) 20V 12V 10V 8.5V 7.5V 6.5V

6 Drain-source on-state resistance

RDS(on) = f (Tj) parameter : ID = 4.6 A, VGS = 10 V -60 -20 20 60 100 °C 180 Tj 0.4 0.8 1.2 1.6 2.4 2.8 Ω 3.4 SPU07N60S5 RDS(on) typ 98% 7 Typ. transfer characteristics ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 10 µs 0 4 8 12 V 20 VGS A ID 25 °C 150 °C 8 Typ. gate charge VGS = f (QGate) parameter: ID = 7.3 A pulsed 0 4 8 12 16 20 24 28 32 nC 38 QGate V SPU07N60S5 VGS

0.2 VDS max

0.8 VDS max

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9 Forward characteristics of body diode

IF = f (VSD) parameter: Tj , tp = 10 µs VSD -110 010 110 210 A SPU07N60S5 IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%)

10 Avalanche SOA

IAR = f (tAR) par.: Tj ≤ 150 °C 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 µs tAR A IAR Tj(START)=125°C Tj(START)=25°C

11 Avalanche energy

EAS = f (Tj) par.: ID = - A, VDD = 50 V 20 40 60 80 100 120 °C 160 Tj 100 120 140 160 180 200 220 mJ 260 EAS

12 Drain-source breakdown voltage

V(BR)DSS = f (Tj) -60 -20 20 60 100 °C 180 Tj 540 560 580 600 620 640 660 680 V 720 SPU07N60S5 V(BR)DSS

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13 Avalanche power losses

PAR = f (f ) parameter: EAR=0.5mJ 10 4 10 5 10 6 MHz f 100 150 200 W 300 PAR 14 Typ. capacitances C = f (VDS) parameter: VGS=0V, f=1 MHz 0 100 200 300 400 V 600 VDS 010 110 210 310 410 pF C Ciss Coss Crss 15 Typ. Coss stored energy Eoss=f(VDS) 0 100 200 300 400 V 600 VDS 0.5 1.5 2.5 3.5 4.5 µJ 5.5 Eoss

2008-04-10Rev. 2.5 Page 9 SPU07N60S5 SPD07N60S5 Definition of diodes switching characteristics

2008-04-10Rev. 2.5 Page 10 SPU07N60S5 SPD07N60S5 PG-TO252-3-1, PG-TO252-3-11, PG-TO252-3-21 (D-PAK)

2008-04-10Rev. 2.5 Page 11 SPU07N60S5 SPD07N60S5 PG-TO251-3-1, PG-TO251-3-21 (I-PAK)

2008-04-10Rev. 2.5 Page 12 SPU07N60S5 SPD07N60S5