SPD04N60C3 INFINEON | Alldatasheet

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Cool MOS™ Power Transistor VDS @ Tjma x 650 V RDS(on) 0.95 Ω ID 4.5 A Feature

  • New revolutionary high voltage technology
  • Ultra low gate charge
  • Periodic avalanche rated
  • Extreme dv/dt rated
  • High peak current capability
  • Improved transconductance P-TO252P-TO251 Type Package Ordering Code SPD04N60C3 P-TO252 Q67040-S4412 SPU04N60C3 P-TO251 - Marking 04N60C3 04N60C3 Maximum Ratings Parameter Symbol Value Unit Continuous drain current TC = 25 °C TC = 100 °C ID 4.5 2.8 A Pulsed drain current, tp limited by Tjma x ID puls 13.5 Avalanche energy, single pulse ID = 3.4 A, VDD = 50 V EAS 130 mJ Avalanche energy, repetitive tAR limited by Tjmax1) ID = 4.5 A, VDD = 50 V EAR 0.4 Avalanche current, repetitive tAR limited by Tjma x IAR 4.5 A Gate source voltage static VGS ±20 V Gate source voltage AC (f >1Hz) VGS ±30 Power dissipation, TC = 25°C Ptot 50 W Operating and storage temperature Tj , Tstg -55... +150 °C

Parameter Symbol Value Unit Drain Source voltage slope V DS = 480 V, ID = 4.5 A, Tj = 125 °C dv/dt 50 V/ns Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Thermal resistance, junction - case RthJC - - 2.5 K/W Thermal resistance, junction - ambient, leaded RthJA - - 75 SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) RthJA Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Tsold - - 260 °C Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Drain-source breakdown voltage V(BR)DSS V GS =0V, ID=0.25mA 600 - - V Drain-Source avalanche breakdown voltage V(BR)DS V GS =0V, ID=4.5A - 700 - Gate threshold voltage VGS(th) ID=200µΑ , V GS =VDS 2.1 3 3.9 Zero gate voltage drain current IDSS V DS =600V, VGS =0V, Tj=25°C, Tj=150°C 0.5 µA Gate-source leakage current IGSS V GS =30V, VDS =0V - - 100 nA Drain-source on-state resistance RDS(on) V GS =10V, ID=2.8A, Tj=25°C Tj=150°C 0.85 2.3 0.95 Ω Gate input resistance R G f=1MHz, open Drain - 0.95 -

Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Transconductance gfs V DS ≥2*ID*RDS(on)max, ID=2.8A - 4.4 - S Input capacitance C iss V GS =0V, V DS =25V, f=1MHz - 490 - pF Output capacitance C oss - 160 - Reverse transfer capacitanceC rss - 15 - Effective output capacitance,3) energy related Co(er) V GS =0V, V DS =0V to 480V - 20 - pF Effective output capacitance,4) time related Co(tr) - 35 - Turn-on delay time td(on) V DD =380V, V GS =0/10V, ID=4.5A, R G =18Ω - 6 - ns Rise time tr - 2.5 - Turn-off delay time td(off) - 58.5 80 Fall time tf - 9.5 14 Gate Charge Characteristics Gate to source charge Q gs V DD =480V, ID=4.5A - 2.2 - nC Gate to drain charge Q gd - 8.8 - Gate charge total Qg V DD =480V, ID=4.5A, V GS =0 to 10V - 19 25 Gate plateau voltage V(plateau) V DD =480V, ID=4.5A - 5 - V 1Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR *f. 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. 4Co(tr) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% VDSS.

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Inverse diode continuous forward current IS TC =25°C - - 4.5 A Inverse diode direct current, pulsed ISM - - 13.5 Inverse diode forward voltage VSD VGS =0V, IF=IS - 1 1.2 V Reverse recovery time trr VR =480V, IF=IS , diF/dt=100A/µs - 300 500 ns Reverse recovery charge Q rr - 2.6 - µC Peak reverse recovery currentIrrm - 18 - A Peak rate of fall of reverse recovery current dirr/dt - - 900 A/µs Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit typ. typ. Thermal resistance Rth1 0.039 K/W Rth2 0.074 Rth3 0.132 Rth4 0.555 Rth5 0.529 Rth6 0.169 Thermal capacitance Cth1 0.00007347 Ws/K Cth2 0.0002831 Cth3 0.0004062 Cth4 0.001215 Cth5 0.00276 Cth6 0.029 External Heatsink Tj Tcase Tamb Cth1 Cth2 Rth1 Rth,n Cth,n Ptot (t)

1 Power dissipation

Ptot = f (TC ) 0 20 40 60 80 100 120 °C 160 TC W SPD04N60C3 Ptot

2 Safe operating area

ID = f ( VDS ) parameter : D = 0 , TC=25°C 10 0 10 1 10 2 10 3 V VDS -2 10 -1 10 0 10 1 10 2 10 A ID tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC

3 Transient thermal impedance

ZthJC = f (tp) parameter: D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -1 s tp -3 10 -2 10 -1 10 0 10 1 10 K/WZthJC D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 4 Typ. output characteristic ID = f (VDS ); Tj=25°C parameter: tp = 10 µs, VGS 0 5 10 15 V 25 VDS A ID 4.5V 5.5V 20V 10V 6.5V

5 Typ. output characteristic ID = f (VDS ); Tj=150°C parameter: tp = 10 µs, VGS 0 5 10 15 V 25 VDS A 8.5 ID 4.5V 5.5V 20V 6.5V 6 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150°C, V GS 0 1 2 3 4 5 6 7 A 9 ID Ω RDS(on) 4.5V 5.5V 20V 6.5V

7 Drain-source on-state resistance

RDS(on) = f (Tj) parameter : ID = 2.8 A, VGS = 10 V -60 -20 20 60 100 °C 180 Tj 0.5 1.5 2.5 3.5 4.5 Ω 5.5 SPD04N60C3 RDS(on) typ 98% 8 Typ. transfer characteristics ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 10 µs 0 2 4 6 8 10 12 14 16 V 20 VGS A ID 25°C 150°C

9 Typ. gate charge VGS = f (QGate) parameter: ID = 4.5 A pulsed 0 4 8 12 16 20 24 nC 30 QGate V SPD04N60C3 VGS 0.2 VDS max

0.8 VDS max

10 Forward characteristics of body diode

IF = f (VSD) parameter: Tj , tp = 10 µs VSD -1 10 0 10 1 10 2 10 A SPD04N60C3 IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%) 11 Typ. drain current slope di/dt = f(R G ), inductive load, Tj = 125°C par.: VDS =380V, VGS =0/+13V, ID=4.5A 0 20 40 60 80 100 120 140 160 Ω 200 RG 400 800 1200 1600 A/µs 2400 di/dt di/dt(on) di/dt(off) 12 Typ. switching time t = f (RG ), inductive load, Tj=125°C par.: V DS =380V, VGS =0/+13V, ID=4.5 A 0 20 40 60 80 100 120 140 160 Ω 190 R G 100 150 200 250 300 350 400 ns 500 t td(off) tf td(on) tr

13 Typ. switching time t = f (ID), inductive load, Tj=125°C par.: VDS =380V, VGS =0/+13V, RG =18Ω ID ns t td(off) tf td(on) tr 14 Typ. drain source voltage slope dv/dt = f(R G ), inductive load, Tj = 125°C par.: V DS =380V, VGS =0/+13V, ID=4.5A 0 20 40 60 80 100 120 140 160 Ω 200 R G 10000 20000 30000 40000 50000 60000 70000 80000 V/ns 100000 dv/dt dv/dt(on) dv/dt(off) 15 Typ. switching losses E = f (ID), inductive load, Tj=125°C par.: VDS =380V, VGS =0/+13V, RG =18Ω ID 0.002 0.004 0.006 0.008 0.01 mWs 0.014 E Eon* Eoff *) Eon includes SDP06S60 diode commutation losses. 16 Typ. switching losses E = f(R G ), inductive load, Tj=125°C par.: V DS =380V, VGS =0/+13V, ID=4.5A 0 20 40 60 80 100 120 140 160 Ω 200 R G 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 mWs 0.1 E Eon* Eoff *) Eon includes SDP06S60 diode commutation losses.

17 Avalanche SOA

IAR = f (tAR) par.: Tj ≤ 150 °C 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 µs tAR 0.5 1.5 2.5 3.5 A IAR Tj(START)=25°C Tj(START)=125°C

18 Avalanche energy

EAS = f (Tj) par.: ID = 3.4 A, V DD = 50 V 20 40 60 80 100 120 °C 160 Tj 100 120 mJ 160 EAS

19 Drain-source breakdown voltage

V(BR)DSS = f (Tj) -60 -20 20 60 100 °C 180 Tj 540 560 580 600 620 640 660 680 V 720 SPD04N60C3 V(BR)DSS

20 Avalanche power losses

PAR = f (f ) parameter: E AR =0.4mJ 10 4 10 5 10 6 Hz f 100 125 150 W 200 PAR

21 Typ. capacitances C = f (VDS ) parameter: V GS =0V, f=1 MHz 0 100 200 300 400 V 600 VDS 0 10 1 10 2 10 3 10 4 10 pF C C iss C oss C rss 22 Typ. C oss stored energy Eoss=f(VDS ) 0 100 200 300 400 V 600 VDS 0.5 1.5 2.5 µJ 3.5 Eoss Definition of diodes switching characteristics

P-TO-252-3-1 (D-PAK) P-TO-251-3-1 (I-PAK) GPT09050 5.4±0.1 -0.106.5+0.15 A 6.22-0.2 1±0.1 0.15 ±0.1 max per side 3 x 0.75 2.28 4.56 +0.08 -0.040.9 2.3-0.10 +0.05 B +0.08 -0.040.5 BA0.25 M ±0.49.3 C 1.0 C All metal surfaces tin plated, except area of cut.

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