SPD04N60C2 INFINEON | Alldatasheet

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Cool MOS™ Power Transistor Feature

  • New revolutionary high voltage technology
  • Ultra low gate charge
  • Periodic avalanche rated
  • Extreme dv/dt rated
  • Ultra low effective capacitances
  • Improved noise immunity Product Summary VDS 600 V RDS(on) 0.95 Ω ID 4.5 A P-TO251 P-TO252 Type Package Ordering Code SPD04N60C2 P-TO252 Q67040-S4307 SPU04N60C2 P-TO251 Q67040-S4306 Marking 04N60C2 04N60C2 Maximum Ratings, at TC = 25°C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current TC = 25 °C TC = 100 °C ID 4.5 2.8 A Pulsed drain current, tp limited by Tjmax ID puls 9 Avalanche energy, single pulse ID=3.6A, VDD=50V EAS 130 mJ Avalanche energy, repetitive tAR limited by Tjmax1) ID=4.5A, VDD=50V EAR 0.4 Avalanche current, repetitive tAR limited by Tjmax IAR 4.5 A Reverse diode dv/dt IS=4.5A, VDS < VDD, di/dt=100A/µs, Tjmax=150°C dv/dt 6 V/ns Gate source voltage VGS ±20 V Power dissipation, TC = 25°C Ptot 50 W Operating and storage temperature Tj , Tstg -55... +150 °C

Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 2.5 K/W Thermal resistance, junction - ambient, leaded RthJA - - 75 SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) RthJA Linear derating factor - - 0.4 W/K Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Tsold - - 260 °C Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Static Characteristics Drain-source breakdown voltage VGS=0V, ID=0.25mA V(BR)DSS 600 - - V Drain-source avalanche breakdown voltage VGS=0V, ID=4.5A V(BR)DS - 700 - Gate threshold voltage, VGS = VDS ID=200µA, Tj=25°C VGS(th) 3.5 4.5 5.5 Zero gate voltage drain current VDS = 600 V, VGS = 0 V, Tj = 25 °C VDS = 600 V, VGS = 0 V, Tj = 150 °C IDSS 0.5 µA Gate-source leakage current VGS=20V, VDS=0V IGSS - - 100 nA Drain-source on-state resistance VGS=10V, ID=2.8A, Tj=25°C RDS(on) - 0.85 0.95 Ω Gate input resistance f = 1 MHz, open drain RG - 0.95 - 1Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f. 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.

Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Characteristics Transconductance gfs VDS≥2*ID*RDS(on)max, ID=2.8A - 2.5 S Input capacitance Ciss VGS=0V, VDS=25V, f=1MHz - 580 - pF Output capacitance Coss - 220 - Reverse transfer capacitance Crss - 7 - Effective output capacitance,1) energy related Co(er) VGS=0V, VDS=0V to 480V - 20 - pF Effective output capacitance,2) time related Co(tr) - 35 - Turn-on delay time td(on) VDD=380V, VGS=0/13V, ID=4.5A, RG=18Ω , Tj=125°C - 10 - ns Rise time tr - 31 - Turn-off delay time td(off) - 44 66 Fall time tf - 12.5 18.8 Gate Charge Characteristics Gate to source charge Qgs VDD=350V, ID=4.5A - 4.5 - nC Gate to drain charge Qgd - 11 - Gate charge total Qg VDD=350V, ID=4.5A, VGS=0 to 10V - 17.6 22.9 Gate plateau voltage V(plateau) VDD=350V, ID=4.5A - 8 - V 1Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. 2Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Characteristics Inverse diode continuous forward current IS TC=25°C - - 4.5 A Inverse diode direct current, pulsed ISM - - 9 Inverse diode forward voltage VSD VGS=0V, IF=IS - 1 1.2 V Reverse recovery time trr VR=350V, IF=IS , diF/dt=100A/µs - 900 1530 ns Reverse recovery charge Qrr - 3.2 - µC Peak reverse recovery current Irrm - 12 - A Peak rate of fall of reverse recovery current dirr/dt - 440 - A/µs Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit typ. typ. Thermal resistance Rth1 0.039 K/W Rth2 0.083 Rth3 0.101 Rth4 0.262 Rth5 0.294 Rth6 0.094 Thermal capacitance Cth1 0.00008293 Ws/K Cth2 0.000282 Cth3 0.0004859 Cth4 0.0006523 Cth5 0.005017 Cth6 0.052 External Heatsink Tj Tcase Tamb Cth1 Cth2 Rth1 Rth,n Cth,n Ptot (t)

1 Power dissipation

Ptot = f (TC) 0 20 40 60 80 100 120 °C 160 TC W SPD04N60C2 Ptot

2 Safe operating area

ID = f ( VDS ) parameter : D = 0 , TC=25°C 10 0 10 1 10 2 10 3 V VDS -2 10 -1 10 0 10 1 10 A ID tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC

3 Transient thermal impedance

ZthJC = f (tp) parameter: D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -1 s tp -3 10 -2 10 -1 10 0 10 1 10 K/WZthJC D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 4 Typ. output characteristic ID = f (VDS); Tj=25°C parameter: tp = 10 µs, VGS 0 5 10 15 V 25 VDS A ID 6.5V 7.5V 8.5V 9.5V 20V 12V 10V

5 Typ. output characteristic ID = f (VDS); Tj=150°C parameter: tp = 10 µs, VGS 0 5 10 15 V 25 VDS A ID 6.5V 7.5V 8.5V 20V 12V 10V 9.5V 6 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150°C, VGS 0 1 2 3 4 5 6 7 A 8.5 ID 1.5 2.5 3.5 Ω RDS(on) 20V 12V 10V 8.5V 7.5V 6.5V

7 Drain-source on-state resistance

RDS(on) = f (Tj) parameter : ID = 2.8 A, VGS = 10 V -60 -20 20 60 100 °C 180 Tj 0.5 1.5 2.5 3.5 4.5 Ω 5.5 SPD04N60C2 RDS(on) typ 98% 8 Typ. transfer characteristics ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 10 µs 0 2 4 6 8 10 12 14 16 V 20 VGS A ID 25 °C 150 °C

9 Forward characteristics of body diode

IF = f (VSD) parameter: Tj , tp = 10 µs VSD -2 10 -1 10 0 10 1 10 A SPD04N60C2 IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%) 10 Typ. switching time t = f (RG), inductive load, Tj=125°C par.: VDS=380V, VGS=0/+13V, ID=4.5 A 0 20 40 60 80 100 120 140 160 Ω 200 RG 0 10 1 10 2 10 3 10 ns t td(off) td(on) tftr 11 Typ. switching losses1) E = f (ID), inductive load, Tj=125°C par.: VDS=380V, VGS=0/+13V, RG=18Ω 0 1 2 3 4 5 6 A 8 ID 0.02 0.04 0.06 0.08 mWs 0.12 E Eon* Eoff *) Eon includes SDP06S60 diode commutation losses. 1This chart helps to estimate the switching power losses. The values can be different under other operating conditions. 12 Typ. switching losses1) E = f(RG), inductive load, Tj=125°C par.: VDS=380V, VGS=0/+13V,ID=4.5A 0 20 40 60 80 100 120 140 160 Ω 200 RG 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 mWs 0.22 E *) Eon includes SDP06S60 diode commutation losses. 1This chart helps to estimate the switching power losses. The values can be different under other operating conditions. Eon* Eoff

13 Avalanche SOA

IAR = f (tAR) par.: Tj ≤ 150 °C 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 µs tAR 0.5 1.5 2.5 3.5 A 4.5 IAR Tj(START)=125°C Tj(START)=25°C

14 Avalanche energy

EAS = f (Tj) par.: ID = 3.6 A, VDD = 50 V 20 40 60 80 100 120 °C 160 Tj 100 120 mJ 160 EAS

15 Drain-source breakdown voltage

V(BR)DSS = f (Tj) -60 -20 20 60 100 °C 180 Tj 540 560 580 600 620 640 660 680 V 720 SPD04N60C2 V(BR)DSS

16 Avalanche power losses

PAR = f (f ) parameter: EAR=0.4mJ 10 4 10 5 10 6 Hz f 100 125 150 W 200 PAR

17 Typ. capacitances C = f (VDS) parameter: VGS=0V, f=1 MHz 0 100 200 300 400 V 600 VDS 0 10 1 10 2 10 3 10 4 10 pF C Ciss Coss Crss 18 Typ. Coss stored energy Eoss=f(VDS) 0 100 200 300 400 V 600 VDS 0.5 1.5 2.5 µJ 3.5 Eoss Definition of diodes switching characteristics

P-TO-252-3-1 (D-PAK) GPT09051 5.4±0.1 -0.106.5+0.15 A ±0.59.9 6.22-0.2 1±0.1 ±0.150.8 0.15 ±0.1 max per side 0.75 2.28 4.57 +0.08 -0.040.9 2.3-0.10 +0.05 B min0.51 ±0.11 +0.08 -0.040.5 0...0.15 BA0.25 M 0.1 All metal surfaces tin plated, except area of cut. P-TO-251-3-1 (I-PAK) GPT09050 5.4±0.1 -0.106.5+0.15 A 6.22-0.2 1±0.1 0.15 ±0.1 max per side 3 x 0.75 2.28 4.56 +0.08 -0.040.9 2.3-0.10 +0.05 B +0.08 -0.040.5 BA0.25 M ±0.49.3 C 1.0 C All metal surfaces tin plated, except area of cut.

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