DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 1
Technical content
20.11.2012 SPT36-C 1 of 1
Silicone Photo-Transistor, SMD package SPT36-C is a surface mount type photo-transistor containing a chip with 0.6x0.6 mm active area, mounted into a ceramic package and covered with silicone. This device is featuring excellent responsibility of 20 µs and a high photocurrent. It’s designed to be easy of setting up optically with a wide angle of half sensitivity of ±40 degrees. Specifications (Unit: mm)
- Spectral Responsivity (Peak): 900 nm
- Chip Size: 0.8 x 0.8 mm
- Active Area: 0.6 x 0.6 mm
- Package: SMD Type: Ceramics Resin Material: Silicone Absolute Maximum Ratings (TA=25°C) Item Symbol Value Unit C-E Breakdown Voltage VCEO 30 V E-C Breakdown Voltage VECO 5 V Collector Current IC 10 mA Collector Dissipation PC 50 mW Operating Temperature Topr -25 … +125 °C Storage Temperature Tstg -30 … +100 °C Soldering Temperature *1 Tsol 240 °C *1 must be completed within 3 seconds Electro-Optical Characteristics Item Symbol Condition Min. Typ. Max. Unit Photo Current IL VCE=5V, L=1000Lx 1 3 - mA Collector Dark Current ID VCE=5V - - 200 nA Collector-Emitter Satu. Voltage VCE(S) IC=2mA, L=1000Lx - - 0.3 V Spectral Responsivity (Peak) λP - 900 - nm Half Angle of Sensitivity Θ1/2 ±40 - deg Rise Time (10-90%) tr RL=1KΩ, VR=5V IC=1mA - 20 - µs Fall Time (10-90%) tf - 20 - µs Note: The above specifications are for reference purpose only and subjected to change without prior notice.