SPS01N60C3_08 INFINEON | Alldatasheet
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Technical content
2008-04-07Rev. 2.1 Page 1 SPS01N60C3 Cool MOS™ Power Transistor VDS @ Tjmax 650 V RDS(on) 6 Ω ID 0.8 A Feature
- New revolutionary high voltage technology
- Ultra low gate charge
- Periodic avalanche rated
- Extreme dv/dt rated
- Ultra low effective capacitances
- Improved transconductance PG-TO251-3-11 Type Package Ordering Code SPS01N60C3 PG-TO251-3-11 - Marking 01N60C3 Maximum Ratings Parameter Symbol Value Unit Continuous drain current TC = 25 °C TC = 100 °C ID 0.8 0.5 A Pulsed drain current, tp limited by Tjmax ID puls 1.6 Avalanche energy, single pulse ID = 0.6 A, VDD = 50 V EAS 20 mJ Avalanche energy, repetitive tAR limited by Tjmax1) ID = 0.8 A, VDD = 50 V EAR 0.01 Avalanche current, repetitive tAR limited by Tjmax IAR 0.8 A Gate source voltage static VGS ±20 V Gate source voltage AC (f >1Hz) VGS ±30 Power dissipation, TC = 25°C Ptot 11 W Operating and storage temperature Tj , Tstg -55... +150 °C Reverse diode dv/dt dv/dt 15 V/ns3)
2008-04-07Rev. 2.1 Page 2 SPS01N60C3 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope VDS = 480 V, ID = 0.8 A, Tj = 125 °C dv/dt 50 V/ns Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Thermal resistance, junction - case RthJC - - 11 K/W Thermal resistance, junction - ambient, leaded RthJA - - 75 SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) RthJA Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s Tsold - - 260 °C Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 600 - - V Drain-Source avalanche breakdown voltage V(BR)DS VGS=0V, ID=0.8A - 700 - Gate threshold voltage VGS(th) ID=250µΑ, VGS=VDS 2.1 3 3.9 Zero gate voltage drain current IDSS VDS=600V, VGS=0V, Tj=25°C, Tj=150°C 0.1 µA Gate-source leakage current IGSS VGS=30V, VDS=0V - - 100 nA Drain-source on-state resistance RDS(on) VGS=10V, ID=0.5A, Tj=25°C Tj=150°C 5.6 15.1 Ω
2008-04-07Rev. 2.1 Page 3 SPS01N60C3 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Transconductance gfs VDS≥2*ID*RDS(on)max, ID=0.5A - 0.75 - S Input capacitance Ciss VGS=0V, VDS=25V, f=1MHz - 100 - pF Output capacitance Coss - 40 - Reverse transfer capacitance Crss - 2.5 - Turn-on delay time td(on) VDD=350V, VGS=0/10V, ID=0.8A, RG=100Ω - 30 - ns Rise time tr - 25 - Turn-off delay time td(off) - 55 82 Fall time tf - 30 45 Gate Charge Characteristics Gate to source charge Qgs VDD=350V, ID=0.8A - 0.9 - nC Gate to drain charge Qgd - 2.2 - Gate charge total Qg VDD=350V, ID=0.8A, VGS=0 to 10V - 3.9 5 Gate plateau voltage V(plateau) VDD=350V, ID=0.8A - 5.5 - V 1Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f. 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 3ISD<=ID, di/dt<=400A/us, VDClink=400V, Vpeak<VBR, DSS, Tj<Tj,max. Identical low-side and high-side switch.
2008-04-07Rev. 2.1 Page 4 SPS01N60C3 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Inverse diode continuous forward current IS TC=25°C - - 0.8 A Inverse diode direct current, pulsed ISM - - 1.6 Inverse diode forward voltage VSD VGS=0V, IF=IS - 1 1.2 V Reverse recovery time trr VR=350V, IF=IS , diF/dt=100A/µs - 570 970 ns Reverse recovery charge Qrr - 0.75 - µC Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit typ. typ. Thermal resistance Rth1 0.225 K/W Rth2 0.395 Rth3 0.603 Rth4 0.995 Rth5 0.691 Rth6 0.148 Thermal capacitance Cth1 0.00001221 Ws/K Cth2 0.00005037 Cth3 0.0000809 Cth4 0.0002915 Cth5 0.001844 Cth6 0.412 External HeatsinkTj Tcase Tamb Cth1 Cth2 Rth1 Rth,n Cth,n Ptot (t)
2008-04-07Rev. 2.1 Page 5 SPS01N60C3
1 Power dissipation
Ptot = f (TC) 0 20 40 60 80 100 120 °C 160 TC W Ptot
2 Safe operating area
I D = f ( VDS ) parameter : D = 0 , TC=25°C 10 0 10 1 10 2 10 3 V VDS -210 -110 010 110 A ID tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC
3 Transient thermal impedance
ZthJC = f (tp) parameter: D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 s tp -210 -110 010 110 210 K/WZthJC D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 4 Typ. output characteristic ID = f (VDS); Tj=25°C parameter: tp = 10 µs, VGS 0 5 10 15 V 25 VDS 0.5 1.5 A 2.5 ID 5.5V 6.5V 20V 10V
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5 Drain-source on-state resistance
RDS(on) = f (Tj) parameter : ID = 0.5 A, VGS = 10 V -60 -20 20 60 100 °C 180 Tj Ω RDS(on) typ 98% 6 Typ. transfer characteristics I D= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 10 µs 0 4 8 12 VGS 20 V 0.5 1.5 A 2.5 ID 7 Typ. gate charge V GS = f (QGate) parameter: ID = 0.8 A pulsed 0 1 2 3 4 nC 5.5 QGate V VGS
0.2 VDS max
0.8 VDS max
8 Forward characteristics of body diode
I F = f (VSD) parameter: Tj , tp = 10 µs VSD -210 -110 010 110 A IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%)
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9 Avalanche SOA
IAR = f (tAR) par.: Tj ≤ 150 °C 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 µs tAR 0.1 0.2 0.3 0.4 0.5 0.6 0.7 A 0.9 IAR Tj(START)=25°C Tj(START)=125°C
10 Avalanche energy
E AS = f (Tj) par.: ID = 0.6 A, VDD = 50 V 25 50 75 100 125 150 °C 200 Tj mJ EAS
11 Drain-source breakdown voltage
V (BR)DSS = f (Tj) -60 -20 20 60 100 °C 180 Tj 540 560 580 600 620 640 660 680 V 720 V(BR)DSS 12 Typ. capacitances C = f (V DS) parameter: VGS=0V, f=1 MHz 0 10 20 30 40 50 60 70 80 V 100 VDS 010 110 210 310 pF C Crss Coss Ciss
2008-04-07Rev. 2.1 Page 8 SPS01N60C3 Definition of diodes switching characteristics
2008-04-07Rev. 2.1 Page 9 SPS01N60C3 PG-TO-251-3-11
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