SPPBI07N60S5

SPP07N60S5 INFINEON | Alldatasheet

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Technical content

2004-03-30Rev. 2.1 Page 1 SPP07N60S5, SPB07N60S5 SPI07N60S5 Cool MOS™ Power Transistor VDS 600 V RDS(on) 0.6 Ω ID 7.3 A Feature

• New revolutionary high voltage technology
• Worldwide best RDS(on) in TO 220
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance P-TO262 P-TO220-3-1P-TO263-3-2 P-TO220-3-1 2 3 Type Package Ordering Code SPP07N60S5 P-TO220-3-1 Q67040-S4172 SPB07N60S5 P-TO263-3-2 Q67040-S4185 SPI07N60S5 P-TO262 Q67040-S4328 Marking 07N60S5 07N60S5 07N60S5 Maximum Ratings Parameter Symbol Value Unit Continuous drain current TC = 25 °C TC = 100 °C ID 7.3 4.6 A Pulsed drain current, tp limited by Tjmax ID puls 14.6 Avalanche energy, single pulse ID = - A, VDD = 50 V EAS 230 mJ Avalanche energy, repetitive tAR limited by Tjmax1) ID = 7.3 A, VDD = 50 V EAR 0.5 Avalanche current, repetitive tAR limited by Tjmax IAR 7.3 A Gate source voltage VGS ±20 V Gate source voltage AC (f >1Hz) VGS ±30 Power dissipation, TC = 25°C Ptot 83 W Operating and storage temperature Tj , Tstg -55... +150 °C

2004-03-30Rev. 2.1 Page 2 SPP07N60S5, SPB07N60S5 SPI07N60S5 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope VDS = 480 V, ID = 7.3 A, Tj = 125 °C dv/dt 20 V/ns Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Thermal resistance, junction - case RthJC - - 1.5 K/W Thermal resistance, junction - ambient, leaded RthJA - - 62 SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) RthJA Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Tsold - - 260 °C Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 600 - - V Drain-Source avalanche breakdown voltage V(BR)DS VGS=0V, ID=7.3A - 700 - Gate threshold voltage VGS(th) ID=350µΑ, VGS=VDS 3.5 4.5 5.5 Zero gate voltage drain current IDSS VDS=600V, VGS=0V, Tj=25°C, Tj=150°C 0.5 100 µA Gate-source leakage current IGSS VGS=20V, VDS=0V - - 100 nA Drain-source on-state resistance RDS(on) VGS=10V, ID=4.6A, Tj=25°C Tj=150°C 0.54 1.46 0.6 Ω Gate input resistance RG f=1MHz, open Drain - 19 -

2004-03-30Rev. 2.1 Page 3 SPP07N60S5, SPB07N60S5 SPI07N60S5 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Characteristics Transconductance gfs VDS≥2*ID*RDS(on)max, ID=4.6A - 4 - S Input capacitance Ciss VGS=0V, VDS=25V, f=1MHz - 970 - pF Output capacitance Coss - 370 - Reverse transfer capacitance Crss - 10 - Effective output capacitance,3) energy related Co(er) VGS=0V, VDS=0V to 480V - 30 - pF Effective output capacitance,4) time related Co(tr) - 55 - Turn-on delay time td(on) VDD=350V, VGS=0/10V, ID=7.3A, RG=12Ω - 120 - ns Rise time tr - 40 - Turn-off delay time td(off) - 170 255 Fall time tf - 20 30 Gate Charge Characteristics Gate to source charge Qgs VDD=350V, ID=7.3A - 7.5 - nC Gate to drain charge Qgd - 16.5 - Gate charge total Qg VDD=350V, ID=7.3A, VGS=0 to 10V - 27 35 Gate plateau voltage V(plateau) VDD=350V, ID=7.3A - 8 - V 1Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f. 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. 4Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.

2004-03-30Rev. 2.1 Page 4 SPP07N60S5, SPB07N60S5 SPI07N60S5 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Inverse diode continuous forward current IS TC=25°C - - 7.3 A Inverse diode direct current, pulsed ISM - - 14.6 Inverse diode forward voltage VSD VGS=0V, IF=IS - 1 1.2 V Reverse recovery time trr VR=350V, IF=IS , diF/dt=100A/µs - 750 1275 ns Reverse recovery charge Qrr - 4.9 - µC Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit typ. typ. Thermal resistance Rth1 0.024 K/W Rth2 0.046 Rth3 0.085 Rth4 0.308 Rth5 0.317 Rth6 0.112 Thermal capacitance Cth1 0.00012 Ws/K Cth2 0.0004578 Cth3 0.000645 Cth4 0.001867 Cth5 0.004795 Cth6 0.045 External Heatsink Tj Tcase Tamb Cth1 Cth2 Rth1 Rth,n Cth,n Ptot (t)

2004-03-30Rev. 2.1 Page 5 SPP07N60S5, SPB07N60S5 SPI07N60S5

1 Power dissipation

Ptot = f (TC) 0 20 40 60 80 100 120 °C 160 TC W 100 SPP07N60S5 Ptot

2 Safe operating area

ID = f ( VDS ) parameter : D = 0 , TC=25°C 10 0 10 1 10 2 10 3 V VDS -2 10 -1 10 0 10 1 10 2 10 A ID tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC 3 Typ. output characteristic ID = f (VDS); Tj=25°C parameter: tp = 10 µs, VGS 0 5 10 15 V 25 VDS A ID 10V 12V 20V 4 Typ. output characteristic ID = f (VDS); Tj=150°C parameter: tp = 10 µs, VGS 0 5 10 15 V 25 VDS A ID 6.5V 7.5V 8.5V 20V 12V 10V

2004-03-30Rev. 2.1 Page 6 SPP07N60S5, SPB07N60S5 SPI07N60S5 5 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150°C, VGS 0 2 4 6 8 10 A 14 ID 1.5 mΩ RDS(on) 20V 12V 10V 8.5V 7.5V 6.5V

6 Drain-source on-state resistance

RDS(on) = f (Tj) parameter : ID = 4.6 A, VGS = 10 V -60 -20 20 60 100 °C 180 Tj 0.4 0.8 1.2 1.6 2.4 2.8 Ω 3.4 SPP07N60S5 RDS(on) typ 98% 7 Typ. transfer characteristics ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 10 µs 0 4 8 12 V 20 VGS A ID 25 °C 150 °C 8 Typ. gate charge VGS = f (QGate) parameter: ID = 7.3 A pulsed 0 4 8 12 16 20 24 28 32 nC 38 QGate V SPP07N60S5 VGS

0.2 VDS max

0.8 VDS max

2004-03-30Rev. 2.1 Page 7 SPP07N60S5, SPB07N60S5 SPI07N60S5

9 Forward characteristics of body diode

IF = f (VSD) parameter: Tj , tp = 10 µs VSD -1 10 0 10 1 10 2 10 A SPP07N60S5 IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%)

10 Avalanche SOA

IAR = f (tAR) par.: Tj ≤ 150 °C 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 µs tAR A IAR Tj(START)=125°C Tj(START)=25°C

11 Avalanche energy

EAS = f (Tj) par.: ID = - A, VDD = 50 V 20 40 60 80 100 120 °C 160 Tj 100 120 140 160 180 200 220 mJ 260 EAS

12 Drain-source breakdown voltage

V(BR)DSS = f (Tj) -60 -20 20 60 100 °C 180 Tj 540 560 580 600 620 640 660 680 V 720 SPP07N60S5 V(BR)DSS

2004-03-30Rev. 2.1 Page 8 SPP07N60S5, SPB07N60S5 SPI07N60S5

13 Avalanche power losses

PAR = f (f ) parameter: EAR=0.5mJ 10 4 10 5 10 6 MHz f 100 150 200 W 300 PAR 14 Typ. capacitances C = f (VDS) parameter: VGS=0V, f=1 MHz 0 100 200 300 400 V 600 VDS 0 10 1 10 2 10 3 10 4 10 pF C Ciss Coss Crss 15 Typ. Coss stored energy Eoss=f(VDS) 0 100 200 300 400 V 600 VDS 0.5 1.5 2.5 3.5 4.5 µJ 5.5 Eoss 16 Typ. gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS

2004-03-30Rev. 2.1 Page 9 SPP07N60S5, SPB07N60S5 SPI07N60S5 Definition of diodes switching characteristics

2004-03-30Rev. 2.1 Page 10 SPP07N60S5, SPB07N60S5 SPI07N60S5 P-TO-220-3-1 A BA0.25 M 2.8 15.38±0.6 2.54 0.75±0.1 ±0.131.27 4.44 B 9.98±0.48 0.05 All metal surfaces tin plated, except area of cut. C ±0.2 10±0.4 3.7 C 0.5±0.1 ±0.95.23 13.5±0.5 Metal surface min. x=7.25, y=12.3 ±0.2 ±0.221.17 ±0.22.51 P-TO-263-3-2 (D2-PAK)

2004-03-30Rev. 2.1 Page 11 SPP07N60S5, SPB07N60S5 SPI07N60S5 P-TO-262-3-1 (I2-PAK) BA0.25 M Typical 2.54 3 x 0.75 ±0.1 1.05 1.27 B 9.25 ±0.2 0.05 Metal surface min. X = 7.25, Y = 6.9 C 11.6 ±0.3 10 ±0.2 C 2.4 0.5 ±0.1 ±0.24.55 13.5 ±0.5 All metal surfaces tin plated, except area of cut. ±0.31 8.51) 2 x 4.4 7.551) 0...0.15 0...0.3 2.4 A

2004-03-30Rev. 2.1 Page 12 SPP07N60S5, SPB07N60S5 SPI07N60S5 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.