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2013/07/05 Ver.1 Page 1 SPP9972 P-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS The SPP9972 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. The SPP9972 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low R DS(ON) and fast switching speed.  Power Management in Note book  Powered System  DC/DC Converter  Load Switch FEATURES PIN CONFIGURATION  -60V/-18A,RDS(ON)= 25mΩ@VGS=- 10V  -60V/- 12A,RDS(ON)= 33mΩ@VGS=- 4.5V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  TO-252 package design TO-252 PART MARKING

2013/07/05 Ver.1 Page 2 SPP9972 P-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description

1 G Gate

2 S Source

3 D Drain

ORDERING INFORMATION

Part Number Package Part Marking SPP9972T252RGB TO-252 SPP9972 ※ SPP9972T252RGB : Tape Reel ; Pb – Free ; Halogen - Free ABSOULTE MAXIMUM RATINGS A=25 Unless otherwise noted)℃ Parameter Symbol Typical Unit Drain-Source V oltage V DSS -60 V Gate –Source V oltage V GSS ±20 V Continuous Drain Current(TJ=150 )℃ TA=25℃ ID -35 A TA=100℃ -27 Pulsed Drain Current I DM -70 A Single Pulse Avalanche Energy EAS 162 mJ Power Dissipation T A=25℃ P D 52 W Operating Junction Temperature T J -55/150 ℃ Storage Temperature Range T STG -55/150 ℃ Thermal Resistance-Junction to Ambient R θJC 2.4 ℃/W

2013/07/05 Ver.1 Page 3 SPP9972 P-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS

(TA=25 Unless otherwise noted)℃ Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown V oltage V (BR)DSS VGS=0V ,ID=-250uA -60 V Gate Threshold V oltage V GS(th) VDS=VGS,ID=-250uA -1 -2.5 V Gate Leakage Current I GSS V DS=0V ,VGS=±20V ±100 nA Zero Gate V oltage Drain Current I DSS VDS=-48V ,VGS=0V -1 uAVDS=-48V ,VGS=0V TJ=55℃ -5 On-State Drain Current I D(on) V DS= -0V ,VGS =-0V -35 A Drain-Source On-Resistance R DS(on) Forward Transconductance gfs V DS=-10V ,ID=-18A 23 S Diode Forward V oltage V SD I S=-1A,VGS =0V -1 V Dynamic Total Gate Charge Q g VDS=-20V ,VGS=-4.5V ID= -12A nCGate-Source Charge Q gs 6.7 Gate-Drain Charge Q gd 5.5 Input Capacitance C iss VDS=-15V ,VGS=0V f=1MHz 3635 pFOutput Capacitance C oss 225 Reverse Transfer Capacitance C rss 140 Turn-On Time td(on) VDD=-15V ,ID=-1A, VGEN=-10V , RG=3.3Ω nS tr 24 Turn-Off Time td(off) 100 tf 7

2013/07/05 Ver.1 Page 4 SPP9972 P-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS F i g 1 . O u t p u t C h a r a c t e r i s t i c F i g 2 . O n R e s i s t a n c e v s G a t e S o u r c e V o l t a g e Fig 3. Source-Drain Diode Forward Voltage Fig 4. Capacitance F i g 5 . G a t e C h a r g e F i g . 6 O n R e s i s t a n c e v s J u n c t i o n T e m p e r a t u r e

2013/07/05 Ver.1 Page 5 SPP9972 P-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS Fig. 7 Threshold Voltage vs Temperature Fig. 8 Save Operating Rnage Fig 9. Switching Time Waveform Fig. 10 Unclamped Inductive Waveform F i g 1 1 . M a x i m u m T r a n s i e n t T h e r m a l I m p e d a n c e

2013/07/05 Ver.1 Page 6 SPP9972 P-Channel Enhancement Mode MOSFET TO-252 PACKAGE OUTLINE

2013/07/05 Ver.1 Page 7 SPP9972 P-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any pate nt or patent rights of SYNC Power Corporation. Conditions mentioned in this publication ar e subject to change without notice. This p ublication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2013 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com