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2009/07/15 Ver.1 Page 1 SPP2319W P-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS The SPP2319W is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high -side switching , and low in -line power loss are needed in a very small outline sur face mount package. Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter FEATURES PIN CONFIGURATION ( SOT-23 ) -40V/-3.0A,RDS(ON)=100mΩ@VGS=- 10V -40V/-2.8A,RDS(ON)=130mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design PART MARKING
2009/07/15 Ver.1 Page 2 SPP2319W P-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description
1 G Gate
2 S Source
3 D Drain
ORDERING INFORMATION
Part Number Package Part Marking SPP2319WS23RGB SOT-23 S19WYW ※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) ※ SPP2319WS23RGB : Tape Reel ; Pb – Free ; Halogen – Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Symbol Typical Unit Drain-Source V oltage VDSS -40 V Gate –Source V oltage VGSS ±20 V Continuous Drain Current(TJ=150℃) TA=25℃ ID -3.5 A TA=70℃ -2.8 Pulsed Drain Current IDM -20 A Continuous Source Current(Diode Conduction) IS -1.4 A Power Dissipation TA=25℃ PD 1.25 W TA=70℃ 0..81 Operating Junction Temperature TJ -55/150 ℃ Storage Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 105 ℃/W
2009/07/15 Ver.1 Page 3 SPP2319W P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown V oltage V(BR)DSS VGS=0V ,ID=-250uA -40 V Gate Threshold V oltage VGS(th) VDS=VGS,ID=-250uA -0.8 -2.5 Gate Leakage Current IGSS VDS=0V ,VGS=±20V ±100 nA Zero Gate V oltage Drain Current IDSS VDS=-36V ,VGS=0V -1 uA VDS=-36V ,VGS=0V TJ=85℃ -5 On-State Drain Current ID(on) VDS= -5V ,VGS =-4.5V -10 A Forward Transconductance gfs VDS=-15V ,ID=-3.0A 13 S Diode Forward V oltage VSD IS=-1.3A,VGS =0V -0.55 -1.0 V Dynamic Total Gate Charge Qg VDS=-15V ,VGS=-10V ID= -3.0A 9 12 nC Gate-Source Charge Qgs 1.5 Gate-Drain Charge Qgd 2.0 Input Capacitance Ciss VDS=-15V ,VGS=0V f=1MHz 500 pF Output Capacitance Coss 95 Reverse Transfer Capacitance Crss 50 Turn-On Time td(on) VDD=-15V ,RL=15Ω ID≡-1.0A,VGEN=-10V RG=6Ω 8 20 nS tr 10 20 Turn-Off Time td(off) 30 35 tf 15 20
2009/07/15 Ver.1 Page 4 SPP2319W P-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS
2009/07/15 Ver.1 Page 5 SPP2319W P-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS
2009/07/15 Ver.1 Page 6 SPP2319W P-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS
2009/07/15 Ver.1 Page 7 SPP2319W P-Channel Enhancement Mode MOSFET SOT-23 PACKAGE OUTLINE
2009/07/15 Ver.1 Page 8 SPP2319W P-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibil ity for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from i ts use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. © The SYNC Power logo is a registered trademark of SYNC Power Corporation © 2004 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 © http://www.syncpower.com