SPP8637 SYNC-POWER | Alldatasheet
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2017/1/05 Ver.1 Page 1 SPP8637 P-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS The SPP8637 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. The SPP8637 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. MB/VGA/Vcore/PD Application DC/DC Power System Load Switch FEATURES PIN CONFIGURATION -30V/-30A, RDS(ON)=8.5mΩ@VGS=-10V -30V/-20A, RDS(ON)=14.5mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability PPAK3X3 package design PPAK3X3 PART MARKING
2017/1/05 Ver.1 Page 2 SPP8637 P-Channel Enhancement Mode MOSFET PPAK3X3 PIN DESCRIPTION Pin Symbol Description
1 S Source
2 S Source
3 S Source
4 G Gate
5 D Drain
6 D Drain
7 D Drain
8 D Drain
ORDERING INFORMATION
Part Number Package Part Mark ing SPP8637DN8RGB PPAK3X3 SPP8637 ※ SPP8637DN8RGB : Tape Reel ; Pb – Free ; Halogen - Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Symbol Typical Unit Drain-Source V oltage VDSS -30 V Gate –Source V oltage VGSS ±20 V Continuous Drain Current TA=25℃ ID -50 A TA=100℃ -32 Pulsed Drain Current IDM -200 A Power Dissipation TC=25℃ PD 59 W Operating Junction Temperature TJ 150 ℃ Storage Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient (t≦10s) RθJA 62 ℃/W
2017/1/05 Ver.1 Page 3 SPP8637 P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown V oltage V(BR)DSS VGS=0V ,ID=-250uA -30 V Gate Threshold V oltage VGS(th) VDS=VGS,ID=-250uA -1.0 -2.5 Gate Leakage Current IGSS VDS=0V ,VGS=±20V ±100 nA Zero Gate V oltage Drain Current IDSS VDS=-30V ,VGS=0V -1 uA VDS=-24V ,VGS=0V, TJ=100℃ -10 On-State Drain Current ID(on) VDS≥-5V ,VGS =-10V -100 A Drain-Source On-Resistance RDS(on) VGS= -10V ,ID=-30A 7 8.5 mΩ VGS=-4.5V ,ID=-20A 11.4 14.5 Gate Resistance Rg VDS=0V , VGS=0V, f=1MHz 8.5 12 Forward Transconductance gfs VDS=-10V ,ID=-3A 14 S Diode Forward V oltage VSD IS=-1A,VGS =0V -1 V Dynamic Total Gate Charge Qg VDS=-15V, VGS=-4.5V ID= -10A nC Gate-Source Charge Qgs 11 Gate-Drain Charge Qgd 10.5 Input Capacitance Ciss VDS=-15VGS=0V f=1MHz 3300 pF Output Capacitance Coss 410 Reverse Transfer Capacitance Crss 280 Turn-On Time td(on) VDD=-15V, ID=-1A,VGS=-10V, RG=6Ω 24.5 nS tr 10.5 Turn-Off Time td(off) 156 tf 50
2017/1/05 Ver.1 Page 4 SPP8637 P-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS
2017/1/05 Ver.1 Page 5 SPP8637 P-Channel Enhancement Mode MOSFET PPAK3X3 PACKAGE OUTLINE
2017/1/05 Ver.1 Page 6 SPP8637 P-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and con sistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from i ts use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not a uthorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. © The SYNC Power logo is a registered trademark of SYNC Power Corporation © 2016 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 © http://www.syncpower.com