SPI80N06S2-07 INFINEON | Alldatasheet
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SPP80N06S2-07,SPB80N06S2-07 OptiMOSâ Power-Transistor Product Summary VDS 55 V RDS(on) 6.6 mW ID 80 A Feature
- N-Channel
- Enhancement mode
- 175°C operating temperature
- Avalanche rated
- dv/dt rated P- TO263 -3-2P- TO262 -3-1 P- TO220 -3-1 Marking 2N0607 2N0607 2N0607 Type Package Ordering Code SPP80N06S2-07 P- TO220 -3-1 Q67060-S6024 SPB80N06S2-07 P- TO263 -3-2 Q67060-S6026 SPI80N06S2-07 P- TO262 -3-1 Q67060-S6037 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current 1) TC=25°C ID A Pulsed drain current TC=25°C ID puls 320 Avalanche energy, single pulse ID=80A, VDD=25V, RGS=25W EAS 530 mJ Repetitive avalanche energy, limited by Tjmax2) EAR 25 Reverse diode dv/dt IS=80A, VDS=44V, di/dt=200A/µs, Tjmax=175°C dv/dt 6 kV/µs Gate source voltage VGS ±20 V Power dissipation TC=25°C Ptot 250 W Operating and storage temperature Tj , Tstg -55... +175 °C IEC climatic category; DIN IEC 68-1 55/175/56
SPP80N06S2-07,SPB80N06S2-07 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - 0.4 0.6 K/W Thermal resistance, junction - ambient, leaded RthJA - - 62 SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage VGS=0V, ID=1mA V(BR)DSS 55 - - V Gate threshold voltage, VGS = VDS ID=180µA VGS(th) 2.1 3 4 Zero gate voltage drain current VDS=55V, VGS=0V, Tj=25°C VDS=55V, VGS=0V, Tj=125°C IDSS 0.01 100 µA Gate-source leakage current VGS=20V, VDS=0V IGSS - 1 100 nA Drain-source on-state resistance VGS=10V, ID=68A RDS(on) - 5.6 6.6 mW 1Current limited by bondwire ; with an RthJC = 0.6K/W the chip is able to carry ID= 135A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.
SPP80N06S2-07,SPB80N06S2-07
Electrical Characteristics
Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs VDS³2*ID*RDS(on)max , ID=80A 51 102 - S Input capacitance Ciss VGS=0V, VDS =25V, f=1MHz - 3400 4540 pF Output capacitance Coss - 880 1100 Reverse transfer capacitance Crss - 215 320 Turn-on delay time td(on) VDD=30V, VGS=10V, ID=80A, RG=3.3W - 16 24 ns Rise time tr - 37 56 Turn-off delay time td(off) - 61 91 Fall time tf - 36 54 Gate Charge Characteristics Gate to source charge Qgs VDD =44V, ID=80A - 18 24 nC Gate to drain charge Qgd - 35 53 Gate charge total Qg VDD =44V, ID=80A, VGS=0 to 10V - 86 110 Gate plateau voltage V(plateau) VDD =44V, ID=80A - 4.9 - V Reverse Diode Inverse diode continuous forward current IS TC=25°C - - 80 A Inv. diode direct current, pulsed ISM - - 320 Inverse diode forward voltage VSD VGS=0V, IF=80A - 0.96 1.3 V Reverse recovery time trr VR=30V, IF=lS, diF/dt=100A/µs - 55 70 ns Reverse recovery charge Qrr - 96 120 nC
SPP80N06S2-07,SPB80N06S2-07
1 Power dissipation
Ptot = f (TC) parameter: VGS³ 6 V 0 20 40 60 80 100 120 140 160 °C 190 TC 100 120 140 160 180 200 220 240 W 280 SPP80N06S2-07 Ptot
2 Drain current
ID = f (TC) parameter: VGS³ 10 V 0 20 40 60 80 100 120 140 160 °C 190 TC A
90 SPP80N06S2-07
4 Max. transient thermal impedance ZthJC = f (tp) parameter : D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 K/W SPP80N06S2-07 ZthJC single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50
3 Safe operating area
ID = f ( VDS ) parameter : D = 0 , TC = 25 °C 10 -1 10 0 10 1 10 2 V VDS 0 10 1 10 2 10 3 10 A SPP80N06S2-07 ID R DS(on) V DS / I D 1 ms 100 µs tp = 15.0µs
SPP80N06S2-07,SPB80N06S2-07 5 Typ. output characteristic ID = f (VDS); Tj=25°C parameter: tp = 80 µs 0 1 2 3 4 V 5.5 VDS 100 120 140 160 A
190 SPP80N06S2-07
VGS [V] a a 3.8 b b 4.0 c c 4.2 d d 4.5 e e 4.8 f f 5.0 g g 5.3 h Ptot = 250W h 10.0 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: VGS 0 20 40 60 80 100 A 140 ID mW
21 SPP80N06S2-07
R DS(on) VGS [V] = c c 4.2 d d 4.5 e e 4.8 f f 5.0 g g 5.3 h h 10.0 7 Typ. transfer characteristics ID= f ( VGS ); VDS³ 2 x ID x RDS(on)max parameter: tp = 80 µs 0 1 2 3 4 V 6 VGS 100 120 A 160 ID 8 Typ. forward transconductance gfs = f(ID); Tj=25°C parameter: gfs 0 20 40 60 80 100 120 A 150 ID 100 S 120 gfs
SPP80N06S2-07,SPB80N06S2-07
9 Drain-source on-state resistance
RDS(on) = f (Tj) parameter : ID = 68 A, VGS = 10 V -60 -20 20 60 100 140 °C 200 Tj mW
24 SPP80N06S2-07
R DS(on) typ 98%
10 Gate threshold voltage
VGS(th) = f (Tj) parameter: VGS = VDS -60 -20 20 60 100 °C 180 Tj 0.5 1.5 2.5 V VGS(th) 900 mA 180 mA 11 Typ. capacitances C = f (VDS) parameter: VGS=0V, f=1 MHz 0 5 10 15 20 V 30 VDS 2 10 3 10 4 10 pF C Ciss Coss Crss 12 Forward character. of reverse diode IF = f (VSD) parameter: Tj , tp = 80 µs VSD 0 10 1 10 2 10 3 10 A SPP80N06S2-07 IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 175 °C typ Tj = 175 °C (98%)
SPP80N06S2-07,SPB80N06S2-07 13 Typ. avalanche energy EAS = f (Tj) par.: ID = 80 A, VDD = 25 V, RGS = 25 W 25 45 65 85 105 125 145 °C 185 Tj 100 150 200 250 300 350 400 450 mJ 550 EAS 14 Typ. gate charge VGS = f (QGate) parameter: ID = 80 A pulsed 0 20 40 60 80 100 nC 130 QGate V
16 SPP80N06S2-07
0,8 VDS max DS maxV0,2
15 Drain-source breakdown voltage
V(BR)DSS = f (Tj) parameter: ID=10 mA -60 -20 20 60 100 140 °C 200 Tj V
66 SPP80N06S2-07
V(BR)DSS
SPP80N06S2-07,SPB80N06S2-07 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Further information Please notice that the part number is BSPP80N06S2-07, BSPB80N06S2-07 and BSPI80N06S2-07, for simplicity the device is referred to by the term SPP80N06S2-07, SPB80N06S2-07 and SPI80N06S2-07 throughout this documentation