SPI80N04S2-H4 INFINEON | Alldatasheet
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Technical content
SPP80N04S2-H4,SPB80N04S2-H4 OptiMOSâ Power-Transistor Product Summary VDS 40 V RDS(on) 4 mW ID 80 A Feature
- N-Channel
- Enhancement mode
- 175°C operating temperature
- Avalanche rated
- dv/dt rated P- TO263 -3-2P- TO262 -3-1 P- TO220 -3-1 Marking 2N04H4 2N04H4 2N04H4 Type Package Ordering Code SPP80N04S2-H4 P- TO220 -3-1 Q67060-S6014 SPB80N04S2-H4 P- TO263 -3-2 Q67060-S6013 SPI80N04S2-H4 P- TO262 -3-1 Q67060-S6014 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current 1) TC=25°C ID A Pulsed drain current TC=25°C ID puls 320 Avalanche energy, single pulse ID=80 A , VDD=25V, RGS=25W EAS 660 mJ Repetitive avalanche energy, limited by Tjmax2) EAR 25 Reverse diode dv/dt IS=80A, VDS=32V, di/dt=200A/µs, Tjmax=175°C dv/dt 6 kV/µs Gate source voltage VGS ±20 V Power dissipation TC=25°C Ptot 300 W Operating and storage temperature Tj , Tstg -55... +175 °C IEC climatic category; DIN IEC 68-1 55/175/56
SPP80N04S2-H4,SPB80N04S2-H4 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - 0.35 0.5 K/W Thermal resistance, junction - ambient, leaded RthJA - - 62 SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage VGS=0V, ID=1mA V(BR)DSS 40 - - V Gate threshold voltage, VGS = VDS ID=250µA VGS(th) 2.1 3 4 Zero gate voltage drain current VDS=40V, VGS=0V, Tj=25°C VDS=40V, VGS=0V, Tj=125°C2) IDSS 0.01 100 µA Gate-source leakage current VGS=20V, VDS=0V IGSS - 1 100 nA Drain-source on-state resistance VGS=10V, ID=80A RDS(on) - 3.4 4 mW 1Current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= 200A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.
SPP80N04S2-H4,SPB80N04S2-H4
Electrical Characteristics
Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs VDS³2*ID*RDS(on)max , ID=80A 53 105 - S Input capacitance Ciss VGS=0V, VDS =25V, f=1MHz - 4430 5890 pF Output capacitance Coss - 1580 2100 Reverse transfer capacitance Crss - 400 600 Turn-on delay time td(on) VDD=20V, VGS=10V, ID=80A, RG=1.3W - 14 21 ns Rise time tr - 36 54 Turn-off delay time td(off) - 46 69 Fall time tf - 35 53 Gate Charge Characteristics Gate to source charge Qgs VDD =32V, ID=80A - 22 29 nC Gate to drain charge Qgd - 47 70 Gate charge total Qg VDD =32V, ID=80A, VGS=0 to 10V - 111 148 Gate plateau voltage V(plateau) VDD = 32 V , ID=80A - 5.2 - V Reverse Diode Inverse diode continuous forward current IS TC=25°C - - 80 A Inv. diode direct current, pulsed ISM - - 320 Inverse diode forward voltage VSD VGS=0V, IF=80A - 0.9 1.3 V Reverse recovery time trr VR=20V, IF=lS, diF/dt=100A/µs - 195 240 ns Reverse recovery charge Qrr - 370 460 nC
SPP80N04S2-H4,SPB80N04S2-H4
1 Power dissipation
Ptot = f (TC) parameter: VGS³ 6 V 0 20 40 60 80 100 120 140 160 °C 190 TC 120 160 200 240 W
320 SPP80N04S2-H4
2 Drain current
ID = f (TC) parameter: VGS³ 10 V 0 20 40 60 80 100 120 140 160 °C 190 TC A
90 SPP80N04S2-H4
4 Max. transient thermal impedance ZthJC = f (tp) parameter : D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 K/W SPP80N04S2-H4 ZthJC single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50
3 Safe operating area
ID = f ( VDS ) parameter : D = 0 , TC = 25 °C 10 -1 10 0 10 1 10 2 V VDS 0 10 1 10 2 10 3 10 A SPP80N04S2-H4 ID R DS(on) V DS / I D 1 ms 100 µs tp = 29.0µs
SPP80N04S2-H4,SPB80N04S2-H4 5 Typ. output characteristic ID = f (VDS); Tj=25°C parameter: tp = 80 µs 0 0.5 1 1.5 2 2.5 3 3.5 4 V 5 VDS 100 120 140 160 A
190 SPP80N04S2-H4
VGS [V] a a 4.0 b b 4.5 c c 5.0 d d 5.5 e e 6.0 f f 6.5 g g 7.0 h Ptot = 300W h 10.0 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: VGS 0 20 40 60 80 100 120 140 A 180 ID W
13 SPP80N04S2-H4
R DS(on) VGS [V] = d d 5.5 e e 6.0 f f 6.5 g g 7.0 h h 10.0 7 Typ. transfer characteristics ID= f ( VGS ); VDS³ 2 x ID x RDS(on)max parameter: tp = 80 µs 0 1 2 3 4 V 6 VGS 100 120 A 160 ID 8 Typ. forward transconductance gfs = f(ID); Tj=25°C parameter: gfs 0 20 40 60 80 100 120 A 160 ID 100 S 140 gfs
SPP80N04S2-H4,SPB80N04S2-H4
9 Drain-source on-state resistance
RDS(on) = f (Tj) parameter : ID = 80 A, VGS = 10 V -60 -20 20 60 100 140 °C 200 Tj W
12 SPP80N04S2-H4
R DS(on) typ 98% 10 Typ. gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS -60 -20 20 60 100 °C 180 Tj 0.5 1.5 2.5 V 3.5 VGS(th) 250 µA 1.25 mA 11 Typ. capacitances C = f (VDS) parameter: VGS=0V, f=1 MHz 0 5 10 15 20 V 30 VDS 2 10 3 10 4 10 5 10 pF C Ciss Coss Crss 12 Forward character. of reverse diode IF = f (VSD) parameter: Tj , tp = 80 µs VSD 0 10 1 10 2 10 3 10 A SPP80N04S2-H4 IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 175 °C typ Tj = 175 °C (98%)
SPP80N04S2-H4,SPB80N04S2-H4 13 Typ. avalanche energy EAS = f (Tj) par.: ID = 80 A , VDD = 25 V, RGS = 25 W 25 45 65 85 105 125 145 °C 185 Tj 100 150 200 250 300 350 400 450 500 550 600 mJ 700 EAS 14 Typ. gate charge VGS = f (QGate) parameter: ID = 80 A pulsed 0 20 40 60 80 100 120 140 nC 170 QGate V
16 SPP80N04S2-H4
VGS 0,8 VDS max DS maxV0,2
15 Drain-source breakdown voltage
V(BR)DSS = f (Tj) parameter: ID=10 mA -60 -20 20 60 100 140 °C 200 Tj V
48 SPP80N04S2-H4
V(BR)DSS
SPP80N04S2-H4,SPB80N04S2-H4 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Further information Please notice that the part number is BSPP80N04S2-H4 and BSPB80N04S2-H4, for simplicity the device is referred to by the term SPP80N04S2-H4 and SPB80N04S2-H4 throughout this documentation.