SPI80N03S2L-06 INFINEON | Alldatasheet

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Technical content

SPP80N03S2L-06,SPB80N03S2L-06 OptiMOSâ Power-Transistor Product Summary VDS 30 V RDS(on) max. SMD version 5.9 mW ID 80 A Feature

  • N-Channel
  • Enhancement mode
  • Logic Level
  • Low On-Resistance RDS(on)
  • Excellent Gate Charge x RDS(on) product (FOM)
  • Superior thermal resistance
  • 175°C operating temperature
  • Avalanche rated
  • dv/dt rated P- TO263 -3-2P- TO262 -3-1 P- TO220 -3-1 Marking 2N03L06 2N03L06 2N03L06 Type Package Ordering Code SPP80N03S2L-06 P- TO220 -3-1 Q67042-S4088 SPB80N03S2L-06 P- TO263 -3-2 Q67042-S4089 SPI80N03S2L-06 P- TO262 -3-1 Q67042-S4092 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current 1) TC=25°C ID A Pulsed drain current TC=25°C ID puls 320 Avalanche energy, single pulse ID=20A, VDD=25V, RGS=25W EAS 240 mJ Repetitive avalanche energy, limited by Tjmax2) EAR 15 Reverse diode dv/dt IS=80A, VDS=24V, di/dt=200A/µs, Tjmax=175°C dv/dt 6 kV/µs Gate source voltage VGS ±20 V Power dissipation TC=25°C Ptot 150 W Operating and storage temperature Tj , Tstg -55... +175 °C IEC climatic category; DIN IEC 68-1 55/175/56

SPP80N03S2L-06,SPB80N03S2L-06 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - 0.68 1 K/W SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage VGS=0V, ID=1mA V(BR)DSS 30 - - V Gate threshold voltage, VGS = VDS ID = 80 µA VGS(th) 1.2 1.6 2 Zero gate voltage drain current VDS=30V, VGS=0V, Tj=25°C VDS=30V, VGS=0V, Tj=125°C IDSS 0.01 100 µA Gate-source leakage current VGS=20V, VDS=0V IGSS - 1 100 nA Drain-source on-state resistance VGS=4.5V, ID=80A VGS=4.5V, ID=80A, SMD version RDS(on) 6.6 9.5 9.2 mW Drain-source on-state resistance4) VGS=10V, ID=80A VGS=10V, ID=80A, SMD version RDS(on) 4.6 6.2 5.9 1Current limited by bondwire ; with an RthJC = 1K/W the chip is able to carry ID= 120A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 4Diagrams are related to straight lead versions

SPP80N03S2L-06,SPB80N03S2L-06

Electrical Characteristics

Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs VDS³2*ID*RDS(on)max , ID=80A 44 88 - S Input capacitance Ciss VGS=0V, VDS =25V, f=1MHz - 1900 2530 pF Output capacitance Coss - 740 990 Reverse transfer capacitance Crss - 175 265 Turn-on delay time td(on) VDD=15V, VGS=10V, ID=20A, RG=3.6W - 10 15 ns Rise time tr - 23 35 Turn-off delay time td(off) - 73 109 Fall time tf - 61 91 Gate Charge Characteristics Gate to source charge Qgs VDD =24V, ID=80A - 6 8 nC Gate to drain charge Qgd - 18 27 Gate charge total Qg VDD =24V, ID=80A, VGS=0 to 10V - 51 68 Gate plateau voltage V(plateau) VDD =24V, ID=80A - 3.1 - V Reverse Diode Inverse diode continuous forward current IS TC=25°C - - 80 A Inv. diode direct current, pulsed ISM - - 320 Inverse diode forward voltage VSD VGS=0V, IF=80A - 0.9 1.3 V Reverse recovery time trr VR=15V, IF=lS, diF/dt=100A/µs - 41 52 ns Reverse recovery charge Qrr - 46 58 nC

SPP80N03S2L-06,SPB80N03S2L-06

1 Power dissipation

Ptot = f (TC) parameter: VGS³ 4 V 0 20 40 60 80 100 120 140 160 °C 190 TC 100 120 W

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2 Drain current

ID = f (TC) parameter: VGS³ 10 V 0 20 40 60 80 100 120 140 160 °C 190 TC A

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4 Max. transient thermal impedance ZthJC = f (tp) parameter : D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 K/W SPP80N03S2L-06 ZthJC single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50

3 Safe operating area

ID = f ( VDS ) parameter : D = 0 , TC = 25 °C 10 -1 10 0 10 1 10 2 V VDS 0 10 1 10 2 10 3 10 A SPP80N03S2L-06 ID R DS(on) V DS / I D 1 ms 100 µs tp = 22.0µs

SPP80N03S2L-06,SPB80N03S2L-06 5 Typ. output characteristic ID = f (VDS); Tj=25°C parameter: tp = 80 µs 0 0.5 1 1.5 2 2.5 3 3.5 4 V 5 VDS 100 120 140 160 A

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VGS [V] a a 3.5 b b 4.0 c c 4.5 d d 5.0 e e 6.0 f Ptot = 150W f 10.0 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: VGS 0 20 40 60 80 100 120 140 160 A 200 ID mW 100 R DS(on) a b c d e f VGS[V]= a= 3.5 b= 4 c= 4.5 d= 5 e= 6 f= 10 7 Typ. transfer characteristics ID= f ( VGS ); VDS³ 2 x ID x RDS(on)max parameter: tp = 80 µs 0 0.5 1 1.5 2 2.5 3 3.5 4 V 5 VGS 100 120 A 160 ID 8 Typ. forward transconductance gfs = f(ID); Tj=25°C parameter: gfs 0 20 40 60 80 A 120 ID 100 S 120 gfs

SPP80N03S2L-06,SPB80N03S2L-06

9 Drain-source on-state resistance

RDS(on) = f (Tj) parameter : ID = 80 A, VGS = 10 V -60 -20 20 60 100 140 °C 200 Tj mW SPP80N03S2L-06 R DS(on) typ 98% 10 Typ. gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS -60 -20 20 60 100 °C 180 Tj 0.5 1.5 V VGS(th) 1mA 83µA 11 Typ. capacitances C = f (VDS) parameter: VGS=0V, f=1 MHz 0 5 10 15 20 V 30 VDS 2 10 3 10 4 10 pF C Ciss Coss Crss 12 Forward character. of reverse diode IF = f (VSD) parameter: Tj , tp = 80 µs VSD 0 10 1 10 2 10 3 10 A SPP80N03S2L-06 IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 175 °C typ Tj = 175 °C (98%)

SPP80N03S2L-06,SPB80N03S2L-06 13 Typ. avalanche energy EAS = f (Tj) par.: ID = 20 A, VDD = 25 V, RGS = 25 W 25 45 65 85 105 125 145 °C 185 Tj 100 120 140 160 180 200 220 mJ 260 EAS 14 Typ. gate charge VGS = f (QGate) parameter: ID = 80 A pulsed 0 10 20 30 40 50 60 nC 80 QGate V

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0,8 VDS max DS maxV0,2

15 Drain-source breakdown voltage

V(BR)DSS = f (Tj) parameter: ID=10 mA -60 -20 20 60 100 140 °C 200 Tj V

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V(BR)DSS

SPP80N03S2L-06,SPB80N03S2L-06 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Further information Please notice that the part number is BSPP80N03S2L-06, BSPB80N03S2L-06 and BSPI80N03S2L-06, for simplicity the device is referred to by the term SPP80N03S2L-06, SPB80N03S2L-06 and SPI80N03S2L-06 throughout this documentation