SPP80N03 SIEMENS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 9

Technical content

Features

  • N channel
  • Enhancement mode
  • Avalanche rated
  • dv/dt rated
  • 175°C operating temperature Pin 1 Pin 2 Pin 3 G D S PackagingType Package Ordering Code SPP80N03 TubeP-TO220-3-1 Q67040-S4734-A2 SPB80N03 Tabe and ReelQ67040-S4734-A3P-TO263-3-2 Maximum Ratings , at Tj = 25 °C, unless otherwise specified Parameter Symbol UnitValue Continuous drain current TC = 25 °C, 1) TC = 100 °C ID A Pulsed drain current TC = 25 °C IDpulse 320 Avalanche energy, single pulse ID = 80 A, VDD = 25 V, R GS = 25 Ω mJEAS 700 Avalanche energy, periodic limited by Tjmax 30 EAR Reverse diode dv/dt IS = 80 A, VDS = 24 V, di/dt = 200 A/µs, Tjmax = 175 °C dv/dt 6 kV/µs Gate source voltage VGS ±20 V Power dissipation TC = 25 °C Ptot 300 W Operating and storage temperature Tj , Tstg °C-55... +175 55/175/56IEC climatic category; DIN IEC 68-1

Parameter ValuesSymbol Unit typ. max.min. Characteristics R thJC - - 0.5 K/WThermal resistance, junction - case -Thermal resistance, junction - ambient, leded R thJA - 62 SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area2) R thJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol UnitValues min. max.typ. Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 25 °C -V(BR)DSS 30 - V Gate threshold voltage, VGS = VDS ID = 240 µA VGS(th) 432.1 Zero gate voltage drain current VDS = 30 V, VGS = 0 V, Tj = 25 °C VDS = 30 V, VGS = 0 V, Tj = 150 °C IDSS µA 100 0.1 Gate-source leakage current VGS = 20 V, VDS = 0 V IGSS - 10 nA100 Drain-Source on-state resistance VGS = 10 V, ID = 80 A R DS(on) - 0.0038 0.006 Ω 1current limited by bond wire 2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air.

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Transconductance VDS ≥2*ID *R DS(on)max , ID = 80 A gfs 30 93 - S Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz C iss - 3970 5000 pF Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz C oss - 1920 2500 Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz C rss - 775 1000 Turn-on delay time VDD = 15 V, V GS = 10 V, ID = 80 A, R G = 2.5 Ω td(on) - 22 33 ns Rise time VDD = 15 V, V GS = 10 V, ID = 80 A, R G = 2.5 Ω tr - 25 38 Turn-off delay time VDD = 15 V, V GS = 10 V, ID = 80 A, R G = 2.5 Ω td(off) - 55 85 Fall time VDD = 15 V, V GS = 10 V, ID = 80 A, R G = 2.5 Ω tf - 40 60

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Gate to source charge VDD = 24 V, ID = 80 A 30 nC20Q gs - - 51Q gdGate to drain charge VDD = 24 V, ID = 80 A 76.5 Gate charge total VDD = 24 V, ID = 80 A, VGS = 0 to 10 V - 112 175Q g Gate plateau voltage VDD = 24 V, ID = 80 A V(plateau) 4.7 - V- Reverse Diode Inverse diode continuous forward current TC = 25 °C IS - - 80 A Inverse diode direct current,pulsed TC = 25 °C ISM - - 320 Inverse diode forward voltage VGS = 0 V, IF = 160 A VSD - 1.1 V1.7 Reverse recovery time VR = 15 V, IF=IS , diF/dt = 100 A/µs trr - 60 ns90 Reverse recovery charge VR = 15 V, IF=lS , diF/dt = 100 A/µs Q rr - µC0.06 0.09

Ptot = f (TC ) 0 20 40 60 80 100 120 140 160 °C 190 TC 120 160 200 240 W 320 SPP80N03 Ptot Drain current ID = f (TC ) parameter: VGS ≥ 10 V 0 20 40 60 80 100 120 140 160 °C 190 TC A SPP80N03 ID Transient thermal impedance ZthJC = f (tp) parameter : D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 K/W SPP80N03 ZthJC single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50 Safe operating area ID = f (V DS ) parameter : D = 0 , TC = 25 °C 10 -1 10 0 10 1 10 2 V VDS 1 10 2 10 3 10 A SPP80N03 ID R DS(on) = V DS / I D DC 10 ms 1 ms 100 µs tp = 54.0µs

Typ. output characteristics ID = f (VDS ) parameter: tp = 80 µs VDS 100 120 140 160 A 190 SPP80N03 ID VGS [V] a a 4.0 b b 4.5 c c 5.0d d 5.5 e e 6.0 f f 6.5 g g 7.0 h h 7.5 i i 8.0 j j 8.5 k k 9.0 l Ptot = 300W l 10.0 Typ. drain-source-on-resistance R DS(on) = f (ID ) parameter: V GS 0 20 40 60 80 100 120 A 150 ID 0.000 0.002 0.004 0.006 0.008 0.010 0.012 0.014 0.016 Ω 0.019 SPP80N03 R DS(on) VGS [V] = a a 4.0 b b 4.5 c c 5.0 d d 5.5 e e 6.0 f f 6.5 g g 7.0 h h 7.5 i i 8.0 j j 8.5 k k 9.0 l l 10.0 Typ. transfer characteristics ID= f (VGS ) parameter: tp = 80 µs VDS ≥ 2 x ID x R DS(on) max 0 1 2 3 4 V 6 VGS A ID Typ. forward transconductance gfs = f(ID ); Tj = 25°C parameter: gfs 0 10 20 30 40 A 60 ID S gfs

Drain-source on-resistance RDS(on) = f (Tj) parameter : ID = 80 A, VGS = 10 V -60 -20 20 60 100 140 °C 200 Tj 0.000 0.001 0.002 0.003 0.004 0.005 0.006 0.007 0.008 0.009 0.010 0.011 0.012 Ω 0.015 SPP80N03 R DS(on) typ 98% Gate threshold voltage VGS(th) = f (Tj) parameter : VGS = V DS , ID = 240 µA -60 -20 20 60 100 140 °C 200 Tj 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 V 5.0 VGS(th) min typ max Typ. capacitances C = f (VDS ) parameter: V GS = 0 V, f = 1 MHz 0 5 10 15 20 25 30 V 40 VDS 500 1500 2500 3500 4500 5500 6500 7500 pF 9500 C Ciss Coss Crss Forward characteristics of reverse diode IF = f (VSD ) parameter: Tj , tp = 80 µs VSD 0 10 1 10 2 10 3 10 A SPP80N03 IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 175 °C typ Tj = 175 °C (98%)

Typ. gate charge VGS = f (Q Gate) parameter: ID puls = 80 A 0 20 40 60 80 100 120 140nC 170 Q Gate V SPP80N03 VGS DS maxV0,8 DS maxV0,2 Avalanche Energy EAS = f (Tj) parameter: ID = 80 A, V DD = 25 V R GS = 25 Ω 20 40 60 80 100 120 140 °C 180 Tj 100 150 200 250 300 350 400 450 500 550 600 mJ 700 EAS Drain-source breakdown voltage V(BR)DSS = f (Tj) -60 -20 20 60 100 140 °C 200 Tj V SPP80N03 V(BR)DSS

Published by Siemens AG, Bereich Halbleiter Vetrieb, Werbung, Balanstraße 73,

81541 München

© Siemens AG 1997 All Rights Reserved. Attention please! As far as patents or other rights of third parties are concerned, liability is only assumed for components, not for applications, processes and circuits implemented within components or assemblies. The information describes a type of component and shall not be considered as warranted characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Semiconductor Group Offices in Germany or the Siemens Companies and Representatives worldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Siemens Office, Semiconductor Group. Siemens AG is an approved CECC manufacturer. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 of the Semiconductor Group of Siemens AG, may only be used in life-support devices or systems2 with the express written approval of the Semiconductor Group of Siemens AG. 1)A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2)Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain and/or protecf human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.