SPP7001K SYNC-POWER | Alldatasheet

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2015/04/20 Ver.1 Page 1 SPP7001K P-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS The SPP7001K is the P -Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in -line power loss are needed in a very small outline surface mount package.  Power Management in Note book  Portable Equipment  Battery Powered System  DC/DC Converter  Load Switch  DSC  LCD Display inverter FEATURES PIN CONFIGURATION(SOT-23)  -60V/-0.5A,RDS(ON)= 6Ω@VGS=- 10V  -60V/-0.25A,RDS(ON)= 10Ω@VGS=-4.5V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  SOT-23 package design PART MARKING 701KYW W

2015/04/20 Ver.1 Page 2 SPP7001K P-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description

1 G Gate

2 S Source

3 D Drain

ORDERING INFORMATION

Part Number Package Part Marking SPP7001KS23RGB SOT-23 701KYW ※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) ※ SPP7001KS23RGB : Tape Reel ; Pb – Free; Halogen – Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Symbol Typical Unit Drain-Source V oltage VDSS -60 V Gate –Source V oltage VGSS ±20 V Continuous Drain Current(TJ=150℃) TA=25℃ ID -0.5 A TA=70℃ -0.3 Pulsed Drain Current IDM -1 A Continuous Source Current(Diode Conduction) IS -0.5 A Power Dissipation TA=25℃ PD 1.25 W TA=70℃ 0.8 Operating Junction Temperature TJ 150 ℃ Storage Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 375 ℃/W

2015/04/20 Ver.1 Page 3 SPP7001K P-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS

(TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown V oltage V(BR)DSS VGS=0V ,ID=-250uA -60 V Gate Threshold V oltage VGS(th) VDS=VGS,ID=-250uA -1 -3 Gate Leakage Current IGSS VDS=0V ,VGS=±20V ±10 uA Zero Gate V oltage Drain Current IDSS VDS=-60V ,VGS=0V -1 uA VDS=-60V ,VGS=0V TJ=55℃ -10 On-State Drain Current ID(on) VDS≦-5V ,VGS=-10V -1 A Drain-Source On-Resistance RDS(on) VGS=- 10V ,ID=-0.5A 6 Ω VGS=-4.5V ,ID=-0.25A 10 Forward Transconductance gfs VDS=-10V ,ID=-0.5A 1 S Diode Forward V oltage VSD IS=-0.2A,VGS=0V -1.5 V Dynamic Total Gate Charge Qg VDS=-30V, VGS=-15V ID= -0.5A nC Gate-Source Charge Qgs 0.53 Gate-Drain Charge Qgd 0.72 Input Capacitance Ciss VDS=-25V ,VGS=0V f=1MHz pF Output Capacitance Coss 13 Reverse Transfer Capacitance Crss 7.3 Turn-On Time td(on) VDD=-25V, ID=-200mA, VGEN=-10V nS Turn-Off Time td(off) 35

2015/04/20 Ver.1 Page 4 SPP7001K P-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS Drain-Current vs. Gate-Source Voltage On-Resistance vs. Drain-Current On-Resistance vs. Gate-Source Voilage Drain-Source Current vs. Drain-Source Voltage

2015/04/20 Ver.1 Page 5 SPP7001K P-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS Capacitance vs. Drain-Source Voltage On-Resistance vs. Drain-Current

2015/04/20 Ver.1 Page 6 SPP7001K P-Channel Enhancement Mode MOSFET SOT-23 PACKAGE OUTLINE

2015/04/20 Ver.1 Page 7 SPP7001K P-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from i ts use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously s upplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. © The SYNC Power logo is a registered trademark of SYNC Power Corpora tion © 2014 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 © http://www.syncpower.com