SPP6241 SYNC-POWER | Alldatasheet
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Technical content
P-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS The SPP6241 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in -line power loss are needed in a very small outline surface mount package. Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter FEATURES PIN CONFIGURATION(UDFN2X2-6L) -20V/-3.3 A,RDS(ON)=45mΩ@VGS=-4.5V -20V/-2.8 A,RDS(ON)=55mΩ@VGS=-2.5V -20V/-2.3 A,RDS(ON)=65mΩ@VGS=-1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability UDFN2X2-6L package design PART MARKING
P-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description
1 D Drain
2 D Drain
3 G Gate
4 S Source
5 D Drain
6 D Drain
ORDERING INFORMATION
Part Number Package Part Marking SPP6241UDN6RGB UDFN2X2-6L 6241YW ※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) ※ SPP6241UDN6RGB : Tape Reel ; Pb – Free ; Halogen – Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Symbol Typical Unit Drain-Source V oltage VDSS -20 V Gate –Source V oltage VGSS ±12 V Continuous Drain Current(TJ=150℃) TA=25℃ ID -4.3 A TA=70℃ -3.8 Pulsed Drain Current* IDM -30 A Continuous Source Current(Diode Conduction) IS -1.6 A Power Dissipation TA=25℃ PD 1.9 W TA=70℃ 1.2 Operating Junction Temperature TJ -55/150 ℃ Storage Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 65 ℃/W *Junction temperature limited.
P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown V oltage V(BR)DSS VGS=0V ,ID=-250uA -20 V Gate Threshold V oltage VGS(th) VDS=VGS,ID=-250uA -0.35 -0.9 Gate Leakage Current IGSS VDS=0V ,VGS=±12V ±100 nA Zero Gate V oltage Drain Current IDSS VDS=-20V ,VGS=0V -1 uA VDS=-20V ,VGS=0V TJ=55℃ -10 On-State Drain Current ID(on) VDS≦-5V ,VGS=-4.5V -6 A Drain-Source On-Resistance RDS(on) Forward Transconductance gfs VDS=-5.0V ,ID=-3.3A 3 S Diode Forward V oltage VSD IS=-1.6A,VGS=0V -0.8 -1.2 V Dynamic Total Gate Charge Qg VDS=-6V ,VGS=-4.5V ID≡-3.3A 8 13 nC Gate-Source Charge Qgs 1.2 Gate-Drain Charge Qgd 2.2 Input Capacitance Ciss VDS=-6V ,VGS=0V f=1MHz 700 pF Output Capacitance Coss 160 Reverse Transfer Capacitance Crss 120 Turn-On Time td(on) VDD=-6V ,RL=6Ω ID≡-1.0A,VGEN=-4.5V RG=6Ω 15 25 nS tr 35 55 Turn-Off Time td(off) 60 90 tf 40 60
P-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS
P-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS
P-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS
P-Channel Enhancement Mode MOSFET UDFN2X2-6L PACKAGE OUTLINE
P-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication sur passes and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. © The SYNC Power logo is a registered trademark of SYNC Power Corporation © 2016 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 9F-5, No.3-2, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 © http://www.syncpower.com