SPP30N03

SPP30N03 INFINEON | Alldatasheet

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a SIPMOS® Power Transistor Features Product Summary « Enhancement mode [Drain-Source on-state resistance | Rpsion| 0.023|0 | «dvidtrated x] + 175°C operating temperature £9} [Type [Package [Ordering Code [Packaging Le [os | Maximum Ratings, at 7; = 25 ‘C, unless otherwise specified Parameter [Symbot | Vale [Unt Continuous drain current Ib A To = 25°C, ") To = 100°C Pulsed drain current Pulse Avalanche energy, single pulse Eas 145 mJ ‘Avalanche energy, periodic limited by Timax Reverse diode dv/dt dvidt kVius Ig = 30 A, Vpg = 24 V, difdt = 200 Alus, Tymax = 175°C Gate source voltage [Ves | 220 SCY Vv Power dissipation 75 w Operating and storage temperature c IEC climatic category; DIN IEC 68-1 ee ee @™ 6235605 0133702 Ted Data Book 980 06.99

[ma | Characteristics Thermal resistance, junction - case [Amc | - | | 2 [Kw Thermal resistance, junction - ambient, leded Anya | - | - | 62 | SMD version, device on PCB: Rina @ min. footprint : @ 6 cm? cooling area?) Electrical Characteristics, at T| = 25 °C, unless otherwise specified Parameter Pn | Unit [min | wp. [max | Static Characteristics Drain- source breakdown voltage fYeness] T=] | v Ves = OV, fp = 0.25 mA Gate threshold voltage, Vas = Vos vom arf | * | fp = 50 pA Zero gate voltage drain current pA cfmmas [sls Vos = 30 V, Vag = 0 V, T= 150°C Gate-source leakage current fe | fe] nA Veg = 20 V, Vos =0V Drain-Source on-state resistance | [coral eco| Q Vag = 10 V, Ip = 30A 0.014 current limited by bond wire 2 Device on 40mm*40mm*1.Smm epoxy PCB FR4 with 6 cm2 (one layer, 70pm thick) copper area for drain connection. PCB is vertical without blown air. M@™@ 6235605 0133703 9b4 a Data Book 981 06.99

Electrical Characteristics, at 7; = 25 °C, unless otherwise specified Parameter _——- Unit [ ruin. | typ. | max. | Dynamic Characteristics Transconductance ~ [relat] Ss Vos?2"Ip*Ros(on)max » /p = 30 A Input capacitance Ciss 1075 | pF Veg = 0 V, Vpg = 25 V, f= 1 MHz Output capacitance Coss Reverse transfer capacitance Crs Vag =0V, Vpg = 25 V, f= 1 MHz im | Turn-on delay time fon) 24 = J|ns Vpp = 18 V, Vag = 10 V, Ip = 30A, Rg=122 Rise time t 87 Vpp = 18 V, Veg = 10 V, Ip = 30A, Rg=122 Turn-off delay time tao 35 Von = 15 V, Vag = 10 V, Ip =30A, Rg=122 Fall time Vpn = 15 V, Vag = 10 V, Ip =30A, Rg=122 M™ 8235605 0133704 &TO a Data Book 982 06.99

Electrical Characteristics, at T; = 25 °C, unless otherwise specified Parameter Pee met Unit [min | we. [max | Dynamic Characteristics Gate to source charge nc Gate to drain charge jm] [| Vpp = 24 V, Ip = 30A Gate charge total Gate plateau voltage Youn] = ] 5°] = | v Vpp = 24 V, Ip =30A Reverse Diode Inverse diode continuous forward current fe fy ee] A To =25°C Inverse diode direct current,pulsed Inverse diode forward voltage vo fey | 7 Veg =0V, Ip = 60A Reverse recovery time 57 [ns Reverse recovery charge 0.048 | pC W@™ 46235605 0133705 737 Data Book 983 06.99

Power Dissipation Drain current Pra (Te) Ip= (To) parameter: Vag 2 10 V “ToT TTT = w CONE CON or CONC COON SHEACUFRAAAAEEAEEL SASEUARRSUEAGREEL NCCC Coo NEBERE 5 eH SESERGREGEEREEA ERED & SON ee eT ASSHEESURRERERER EEE CCCCEPON Eee) COOP t « RASSEREEAACSSUEAE {Co eer COCOONS COREE cece AN LCE AUGSGHGRGHORGREREA EG CoCo COR eC J Copco oreo COCEEPCEPEEPee a) (CEC Pe (CECE © 20 40 60 80 100 120 140 16°C 190 0 «20 40 60 80 100 120 140 16C°C 190 — To —— To Safe operating area Transient thermal impedance Ip=f (Vos) Zhac =f (tp) parameter: D=0, To =25°C parameter : D = /T ose 10 eS ae eer corn C one e ee eee ee se all oo EER Sea 2 oo TTT # Pea oo N fSseiis Seti Soci pte eens: esti: Seat Pa A REE dl BB SSS 7 is Shas Seti eat TI ee eats: amen Seuss Savi Sai meedts ma AY ae ars sa t COED ASI td SSecri ammatincn ne ‘oC of — AN ei pepe Sih SH St: a soe UTNE TTI Sai wv WU 107 10° 0" v 107 10, 10° 10° 10 10) 10 s 10° eos >} Data Book 984 06.99 wm 8235b05 0133706 673 mm

hari characteristics Typ. drain-source-on-resistance varameter = 80 Us ~ Poston) = Flo) Pa ter fp = ls parameter: Vag = sees "PREEEEEE oo ee em ppt pee is PI TT TT Ty KY rn oe rs 0.060] a (7 coo + HET TI so ee Fs es se Z 0.050 ine eT TTT 2} eee} LTT TT TT ies Sl ///onen ae os poet EI oy (7a bs et A UE ‘i “ iol Pi TT | oe A tooo} 4A oe oe eer ATA All) SATS oe os HAH TY (Ae 199 a — aA Aap ZEp. set Pesastastasn) oo Pree 00s | ZAZEESee const fs ko ds fn ds fo Fe eo as fo wo Qo os 10 15 bo BE 80 38 40°V 50 saan Cr a a) —> Vos b Typ. transfer characteristics Ip= f (Vgs) Typ. forward transconductance parameter: f, = 80 ps Os = Kl); T= 25°C Vg = 2 X Ip x Apsion) max parameter: gs Lt ty) 67) _| 7 | TIE ot °% 6 v 10 % Ss 10 18 2 2 2 A «0 A —* Ves — b Data Book 985 06.99 . MM 6235605 0133707 SOT am

< nfineon SPP 30N03 Drain-source on-resistance we ne voltage Pos(on) = f(T) ‘GS(th) = my _ _ parameter: fp = 90 A, Vag = 10V parameter : Vas = Vos, Ip = 50 HA 0.060; —_ ied A all TTT Ti tity) JEEEEFEEEREEEH oso! PPP TT Cet] PPE TT Pitty tae aa ee SCOP g EEE BCCCCCCTT CCCP) * SERRE © 00s a Ee eC LPT eT TT os or mL Peet TTT Be SS 0.025 | I = t Se) A GD A sot beet | | Try | eE-EE EEE re ele rt | | | BEE E EEE Ee 0.015) tort a a He Leer TT TT | a LEE a seCCEPPETT ETE) 0 apSSEEEEEr eo 00055-9920 8000 tad B00 oo ee mee —- 7 j Typ. capacitances Forward characteristics of reverse diode C=f(Vps) fp = f(Vep) parameter: Veg = 0 V, f= 1 MHz parameter: Tj , = 80 us 2200 0 2 SS FERRER EERE SEES | ART rrr) | Coe eee \\ w SL © 4 SRR Spee 000 \\ se \\ ee OA ! \\N a t CLOUT a = FEARS; -15'cr = FRA S+E5-| BESS = fT, = 175°C (98%) , | Pane TH a a oo 4 08 2 Ne 20 2a V 30 —> Vos — > Vsp . Data Book 986 06.99 M™@ 8235605 0133708 44b mm

Avalanche Energy Eqs = f(T) Typ. gate charge parameter: Ip = 30 A, Vpp = 25 V Vas= 1 (Qsate) Res = 252 Parameter: fp puis = 30 A “ “CUTTY aaa v HHH ~™ LETT yA [| AUGUERRERGEEE 0/008 iN ET AAA eCNCCCIT “HERE week CEE saa a \\| TAT f Gaia f COO 0) \\ Ni eee ee | A DW AEeen nRGRRRGRal CPT ba AP SSRSRRERaneeeeeee — | SK Pooocoee eee >< LT i) So 406080100 +120 140 C180 04 82 16 20 Be BAG 7 — "Oen Drain-source breakdown voltage Veryoss = f(T) v aH eT g HT A & fp te ata tHe BERD ZGRRREREE tt tH SAGRRRERE | "eg 20 =) e000 uo G0 ey Data Book 987 06.99 @™® 6235605 01337059 342

C Infineon GehdusemaBbilder technologies Package Outlines GehdusemaBbilder Package Outlines (MaBe in mm, wenn nicht anders angegeben) (Dimensions in mm, unless otherwise specified) Gewicht etwa 0.15 g 0:83 +008 x45° Approx. weight 0.15 g ar s 402 q.3 [ls x» siae | | 8 3 oy at ay 2 wl con SS stan 4 4S |G 7MIAIG) _, gor 5.0!) 4 Index Marking (Chamfer) 1 Does not include plastic or metal protrusion of 0.15 max. per side Bild 16 Figure 16 P-TO218-AA (P-TO218-2-1) 5. _ Gewicht etwa 4.9 g we rox. weight 4.9 job. 49 Aoproxwicon 499 \\roeti] art or iq LLP Jose foro) 1 4) Punch recon, bur max. 0.04 2) Dp timing 3) Max 155 by dip ting reas but max 005, {951 not cemersoned max. 0.2 ore Bild 17 Figure 17 Data Book 1055 06.99 @™ 6235605 0133774 115 a

r¢ i GehausemaBbilder In fineo i Package Outlines P-TO220-3-1 Gewicht etwa 1.8 g 10:02 i Approx. weight 1.8 g [gases | Icy | ms a el 12001 reo I] EE rit. | 0.015, [Lose tsa wat [105 "Typical ‘All metal surfaces tin plated, except area of cut, GPTosis6 Bild 18 Figure 18 P-TO251-3-1 Gewicht etwa 2.0 g Approx. weight 2.0 g Cod asi . 3 aw <> (1 [4] » rimrimiy BO 0.45 max LT z 1 ciamee 3 Il 3x075.0 seat ri {@[0.25 @IATBIC) All metal surtaces tin pated, except area of cut rrecea Bild 19 Figure 19 Data Book 1056 06.99 MB 6235605 0133775 O50 a

technologies Package Outlines P-T0252-3-1 Gewicht etwa 0.38 g Approx. weight 0.38 g ots ssi ase x ng . es 5 09st af | i ' if oxsmax [| il Bt TL o.01s por side 0.7501 [Lose me [[etsas | 10.25 WATB! fe] ‘Al metal sutaces tn plated, except area of cut rset Bild 20 Figure 20 P-T0262-3-1/PPAK tA (5) 10202 4.4201 35) | 2 tater |_| |= HI Fife]; «ml = | ae | 7 <O>y TE i ‘ 2 @ 2/3 3 i IL05:01 3075.01 sm [JL .05.02 Gay 2G8| | eroas WIAD) ” Typical Metal sutace min. X= 7.25, ¥ =7.35 ‘Alimetal surlaces tn plated, except area of cu. rroweus Bild 21 Figure 21 Data Book 1057 06.99 @™@ 8235605 0133776 TI?

C Infineon Gehausemabbilder Infineon Package Outlines a P:T0263-3-2/D°PAK Gewicht etwa 1.38. jow2 af [A] B ay [ate 4 id E1005) 4! ., 24 PY ai ber 4. Ti Ke> o— ir 3 0.75:01 M0500 [Its UI max : CL srw) Iai "Typical ‘Aiimetal sutaces tin pated, except area of cut oF Teo8s Bild 22 Figure 22 Gewicht etwa 0.01 g Approx. weight 0.01 g 1.Amax

2.9301 Ol max

K i= a 402 F - on WH HI 2 2 2 0430 Il € ' 0.08..0.15 1 | 28) 230 crsmsss? Bild 23 Figure 23 Data Book 1058 06.99 | mm 8235605 0133777 123

technologies Package Outlines Gewicht etwa 0.01 g Approx. weight 0.01 g cr S ral [0.2 ° -==42 Fy a

6 To PTA

ies wins || max {25 min a _ @ cPsvesss Bild 24 Figure 24 | $QT-223 (P:SOT223-4-1) Gewicht etwa 0.15 g Approx. weight 0.15 g a 6502 1.01 0.4 max P| [ 8 402 \\ ‘ pt ey Pou EF 2 | [fF orem | KT Qo BEM, [tel ‘ u KS 2 | a 3; 8 f crass Bild 25 Figure 25 Data Book 1059 06.99 M@™ 4235605 0133778 SbT Me

C Infineon GehausemaBbilder technologies Package Outlines T0-92 — Gewicht etwa 0.23 g Approx. weight 0.23 g 123 S202 4202 S ) g 3 %, 3 at ry 2 ba ge em “fijoews SF 1.27 “, f9.4r0es

2.54 GPTOSIS8

Gewicht etwa 0.23 g Approx. weight 0.23 g . \\ 28 52.2 42.99 Lys; | fete} 3 a t oO “tas” | Py Ve [fos + 0.4005 9.41008 [Tes orn Bild 27 Figure 27 Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information”, ‘SMD = Surface Mounted Device Data Book 1060 06.99 M@™ 8235605 0133779 77h