SPP24N60C3_09 INFINEON | Alldatasheet
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2009-12-01Rev. 2.5 Page 1 SPP24N60C3 Cool MOS™ Power Transistor VDS @ Tjmax 650 V RDS(on) 0.16 Ω ID 24.3 A Feature
- New revolutionary high voltage technology
- Worldwide best RDS(on) in TO 220
- Ultra low gate charge
- Periodic avalanche rated
- Extreme dv/dt rated
- Ultra low effective capacitances
- Improved transconductance PG-TO220-3-1 Type Package Ordering Code SPP24N60C3 PG-TO220-3-1 Q67040-S4639 Marking 24N60C3 Maximum Ratings Parameter Symbol Value Unit Continuous drain current TC = 25 °C TC = 100 °C ID 24.3 15.4 A Pulsed drain current, tp limited by Tjmax ID puls 72.9 Avalanche energy, single pulse ID = 10 A, VDD = 50 V EAS 780 mJ Avalanche energy, repetitive tAR limited by Tjmax1) ID = 24.3 A, VDD = 50 V EAR 1 Avalanche current, repetitive tAR limited by Tjmax IAR 24.3 A Gate source voltage static VGS ±20 V Gate source voltage AC (f >1Hz) VGS ±30 Power dissipation, TC = 25°C Ptot 240 W Operating and storage temperature Tj , Tstg -55... +150 °C Reverse diode dv/dt dv/dt 15 V/ns4)
2009-12-01Rev. 2.5 Page 2 SPP24N60C3 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope VDS = 480 , ID = 24.3 , Tj = 125 °C dv/dt 50 V/ns Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Thermal resistance, junction - case RthJC - - 0.52 K/W Thermal resistance, junction - ambient, leaded RthJA - - 62 Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s Tsold - - 260 °C Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 600 - - V Drain-Source avalanche breakdown voltage V(BR)DS VGS=0V, ID=24.3A - 700 - Gate threshold voltage VGS(th) ID=1200µΑ, VGS=VDS 2.1 3 3.9 Zero gate voltage drain current IDSS VDS=600V, VGS=0V, Tj=25°C, Tj=150°C 0.1 100 µA Gate-source leakage current IGSS VGS=20, VDS=0V - - 100 nA Drain-source on-state resistance RDS(on) VGS=10V, ID=15.4A, Tj=25°C Tj=150°C 0.14 0.34 0.16 Ω Gate input resistance RG f=1MHz, open Drain - 0.66 -
2009-12-01Rev. 2.5 Page 3 SPP24N60C3 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Transconductance gfs VDS≥2*ID*RDS(on)max, ID=15.4A - 21.5 - S Input capacitance Ciss VGS=0V, VDS=25V, f=1MHz - 3000 - pF Output capacitance Coss - 1000 - Reverse transfer capacitance Crss - 60 - Effective output capacitance,2) energy related Co(er) VGS=0V, VDS=0V to 480V - 141 - pF Effective output capacitance,3) time related Co(tr) - 224 - Turn-on delay time td(on) VDD=380V, VGS=0/10V, ID=24.3A, RG=3.3Ω - 13 - ns Rise time tr - 21 - Turn-off delay time td(off) - 140 - Fall time tf - 14 - Gate Charge Characteristics Gate to source charge Qgs VDD=480, ID=24.3A - 12.7 - nC Gate to drain charge Qgd - 45.8 - Gate charge total Qg VDD=480V, ID=24.3A, VGS=0 to 10V - 104.9 135 Gate plateau voltage V(plateau) VDD=480V, ID=24.3A - 5 - V 1Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f. 2Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. 3Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 4ISD<=ID, di/dt<=200A/us, VDClink=400V, Vpeak<VBR, DSS, Tj<Tj,max. Identical low-side and high-side switch.
2009-12-01Rev. 2.5 Page 4 SPP24N60C3 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Inverse diode continuous forward current IS TC=25°C - - 24.3 A Inverse diode direct current, pulsed ISM - - 72.9 Inverse diode forward voltage VSD VGS=0V, IF=IS - 1 1.2 V Reverse recovery time trr VR=480V, IF=IS , diF/dt=100A/µs - 600 - ns Reverse recovery charge Qrr - 13 - µC Peak reverse recovery current Irrm - 70 - A Peak rate of fall of reverse recovery current dirr/dt - 1400 - A/µs Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit typ. typ. Thermal resistance Rth1 0.006524 K/W Rth2 0.013 Rth3 0.025 Rth4 0.096 Rth5 0.117 Rth6 0.053 Thermal capacitance Cth1 0.0004439 Ws/K Cth2 0.001662 Cth3 0.002268 Cth4 0.006183 Cth5 0.014 Cth6 0.104 External HeatsinkTj Tcase Tamb Cth1 Cth2 Rth1 Rth,n Cth,n Ptot (t)
2009-12-01Rev. 2.5 Page 5 SPP24N60C3
1 Power dissipation
Ptot = f (TC) 0 20 40 60 80 100 120 °C 160 TC 100 120 140 160 180 200 220 W 260 SPP24N60C3 Ptot
2 Safe operating area
ID = f ( VDS ) parameter : D = 0 , TC=25°C 10 0 10 1 10 2 10 3 V VDS -210 -110 010 110 210 A ID tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC
3 Transient thermal impedance
ZthJC = f (tp) parameter: D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -1 s tp -410 -310 -210 -110 010 K/WZthJC D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 4 Typ. output characteristic ID = f (VDS); Tj=25°C parameter: tp = 10 µs, VGS 0 4 8 12 16 20 V 26 VDS A 100 ID Vgs = 20V Vgs = 7.5V Vgs = 7V Vgs = 6.5V Vgs = 6V Vgs = 5.5V Vgs = 5V Vgs = 4.5V Vgs = 4V
2009-12-01Rev. 2.5 Page 6 SPP24N60C3 5 Typ. output characteristic ID = f (VDS); Tj=150°C parameter: tp = 10 µs, VGS 0 4 8 12 16 20 V 26 VDS A ID Vgs = 20V Vgs = 6.5V Vgs = 6V Vgs = 5.5V Vgs = 5V Vgs = 4.5V Vgs = 4V 6 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150°C, VGS 0 5 10 15 20 25 30 35 40 A 50 ID 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Ω RDS(on) Vgs = 4V Vgs = 4.5V Vgs = 5V Vgs = 5.5V Vgs = 6V Vgs = 6.5V Vgs = 20V
7 Drain-source on-state resistance
RDS(on) = f (Tj) parameter : ID = 15.4 A, VGS = 10 V -60 -20 20 60 100 °C 180 Tj 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Ω SPP24N60C3 RDS(on) typ 98% 8 Typ. transfer characteristics ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 10 µs 0 1 2 3 4 5 6 7 8 V 10 VGS A 100 ID Tj = 25°C Tj = 150°C
2009-12-01Rev. 2.5 Page 7 SPP24N60C3 9 Typ. gate charge VGS = f (QGate) parameter: ID = 24.3 A pulsed 0 20 40 60 80 100 120 140 nC 170 QGate V SPP24N60C3 VGS 0.2 VDS max
0.8 VDS max
10 Forward characteristics of body diode
IF = f (VSD) parameter: Tj , tp = 10 µs VSD -110 010 110 210 A SPP24N60C3 IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%)
11 Avalanche SOA
IAR = f (tAR) par.: Tj ≤ 150 °C 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 µs tAR A IAR Tj(START)=125°C Tj(START)=25°C
12 Avalanche energy
EAS = f (Tj) par.: ID = 10 A, VDD = 50 V 25 50 75 100 °C 150 Tj 0.1 0.2 0.3 0.4 0.5 0.6 0.7 mJ 0.9 EAS
2009-12-01Rev. 2.5 Page 8 SPP24N60C3
13 Drain-source breakdown voltage
V(BR)DSS = f (Tj) -60 -20 20 60 100 °C 180 Tj 540 560 580 600 620 640 660 680 V 720 SPP24N60C3 V(BR)DSS
14 Avalanche power losses
PAR = f (f ) parameter: EAR=1mJ 10 3 10 4 10 5 10 6 Hz f 200 400 600 W 1000 PAR 15 Typ. capacitances C = f (VDS) parameter: VGS=0V, f=1 MHz 0 100 200 300 400 V 600 VDS 010 110 210 310 410 510 pF C Ciss Coss Crss 16 Typ. Coss stored energy Eoss=f(VDS) 0 100 200 300 400 V 600 VDS µJ Eoss
2009-12-01Rev. 2.5 Page 9 SPP24N60C3 Definition of diodes switching characteristics
2009-12-01Rev. 2.5 Page 10 SPP24N60C3 PG-TO-220-3-1
2009-12-01Rev. 2.5 Page 11 SPP24N60C3