SPP24N60C3

SPP24N60C3 INFINEON | Alldatasheet

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2004-03-02Rev. 2.0 Page 1 SPP24N60C3 Cool MOS™ Power Transistor VDS @ Tjmax 650 V RDS(on) 0.16 Ω ID 24.3 A Feature

• New revolutionary high voltage technology
• Worldwide best RDS(on) in TO 220
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance P-TO220-3-1 Type Package Ordering Code SPP24N60C3 P-TO220-3-1 Q67040-S4639 Marking 24N60C3 Maximum Ratings Parameter Symbol Value Unit Continuous drain current TC = 25 °C TC = 100 °C ID 24.3 15.4 A Pulsed drain current, tp limited by Tjmax ID puls 72.9 Avalanche energy, single pulse ID = 10 A, VDD = 50 V EAS 780 mJ Avalanche energy, repetitive tAR limited by Tjmax1) ID = 24.3 A, VDD = 50 V EAR 1 Avalanche current, repetitive tAR limited by Tjmax IAR 24.3 A Gate source voltage static VGS ±20 V Gate source voltage AC (f >1Hz) VGS ±30 Power dissipation, TC = 25°C Ptot 240 W Operating and storage temperature Tj , Tstg -55... +150 °C

2004-03-02Rev. 2.0 Page 2 SPP24N60C3 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope VDS = 480 , ID = 24.3 , Tj = 125 °C dv/dt 50 V/ns Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Thermal resistance, junction - case RthJC - - 0.52 K/W Thermal resistance, junction - ambient, leaded RthJA - - 62 Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Tsold - - 260 °C Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 600 - - V Drain-Source avalanche breakdown voltage V(BR)DS VGS=0V, ID=24.3A - 700 - Gate threshold voltage VGS(th) ID=1200µΑ, VGS=VDS 2.1 3 3.9 Zero gate voltage drain current IDSS VDS=600V, VGS=0V, Tj=25°C, Tj=150°C 0.1 100 µA Gate-source leakage current IGSS VGS=20, VDS=0V - - 100 nA Drain-source on-state resistance RDS(on) VGS=10V, ID=15.4A, Tj=25°C Tj=150°C 0.14 0.34 0.16 Ω Gate input resistance RG f=1MHz, open Drain - 0.66 -

2004-03-02Rev. 2.0 Page 3 SPP24N60C3 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Transconductance gfs VDS≥2*ID*RDS(on)max, ID=15.4A - 21.5 - S Input capacitance Ciss VGS=0V, VDS=25V, f=1MHz - 3000 - pF Output capacitance Coss - 1000 - Reverse transfer capacitance Crss - 60 - Effective output capacitance,2) energy related Co(er) VGS=0V, VDS=0V to 480V - 141 - pF Effective output capacitance,3) time related Co(tr) - 224 - Turn-on delay time td(on) VDD=380V, VGS=0/10V, ID=24.3A, RG=3.3Ω - 13 - ns Rise time tr - 21 - Turn-off delay time td(off) - 140 - Fall time tf - 14 - Gate Charge Characteristics Gate to source charge Qgs VDD=480, ID=24.3A - 12.7 - nC Gate to drain charge Qgd - 45.8 - Gate charge total Qg VDD=480V, ID=24.3A, VGS=0 to 10V - 104.9 135 Gate plateau voltage V(plateau) VDD=480V, ID=24.3A - 5 - V 1Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f. 2Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. 3Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.

2004-03-02Rev. 2.0 Page 4 SPP24N60C3 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Inverse diode continuous forward current IS TC=25°C - - 24.3 A Inverse diode direct current, pulsed ISM - - 72.9 Inverse diode forward voltage VSD VGS=0V, IF=IS - 1 1.2 V Reverse recovery time trr VR=480V, IF=IS , diF/dt=100A/µs - 600 - ns Reverse recovery charge Qrr - 13 - µC Peak reverse recovery current Irrm - 70 - A Peak rate of fall of reverse recovery current dirr/dt - 1400 - A/µs Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit typ. typ. Thermal resistance Rth1 0.006524 K/W Rth2 0.013 Rth3 0.025 Rth4 0.096 Rth5 0.117 Rth6 0.053 Thermal capacitance Cth1 0.0004439 Ws/K Cth2 0.001662 Cth3 0.002268 Cth4 0.006183 Cth5 0.014 Cth6 0.104 External Heatsink Tj Tcase Tamb Cth1 Cth2 Rth1 Rth,n Cth,n Ptot (t)

2004-03-02Rev. 2.0 Page 5 SPP24N60C3

1 Power dissipation

Ptot = f (TC) 0 20 40 60 80 100 120 °C 160 TC 100 120 140 160 180 200 220 W 260 SPP24N60C3 Ptot

2 Safe operating area

ID = f ( VDS ) parameter : D = 0 , TC=25°C 10 0 10 1 10 2 10 3 V VDS -2 10 -1 10 0 10 1 10 2 10 A ID tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC

3 Transient thermal impedance

ZthJC = f (tp) parameter: D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -1 s tp -4 10 -3 10 -2 10 -1 10 0 10 K/W ZthJC D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 4 Typ. output characteristic ID = f (VDS); Tj=25°C parameter: tp = 10 µs, VGS 0 4 8 12 16 20 V 26 VDS A 100 ID Vgs = 20V Vgs = 7.5V Vgs = 7V Vgs = 6.5V Vgs = 6V Vgs = 5.5V Vgs = 5V Vgs = 4.5V Vgs = 4V

2004-03-02Rev. 2.0 Page 6 SPP24N60C3 5 Typ. output characteristic ID = f (VDS); Tj=150°C parameter: tp = 10 µs, VGS 0 4 8 12 16 20 V 26 VDS A ID Vgs = 20V Vgs = 6.5V Vgs = 6V Vgs = 5.5V Vgs = 5V Vgs = 4.5V Vgs = 4V 6 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150°C, VGS 0 5 10 15 20 25 30 35 40 A 50 ID 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Ω RDS(on) Vgs = 4V Vgs = 4.5V Vgs = 5V Vgs = 5.5V Vgs = 6V Vgs = 6.5V Vgs = 20V

7 Drain-source on-state resistance

RDS(on) = f (Tj) parameter : ID = 15.4 A, VGS = 10 V -60 -20 20 60 100 °C 180 Tj 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Ω SPP24N60C3 RDS(on) typ 98% 8 Typ. transfer characteristics ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 10 µs 0 1 2 3 4 5 6 7 8 V 10 VGS A 100 ID Tj = 25°C Tj = 150°C

2004-03-02Rev. 2.0 Page 7 SPP24N60C3 9 Typ. gate charge VGS = f (QGate) parameter: ID = 24.3 A pulsed 0 20 40 60 80 100 120 140 nC 170 QGate V SPP24N60C3 VGS 0.2 VDS max

0.8 VDS max

10 Forward characteristics of body diode

IF = f (VSD) parameter: Tj , tp = 10 µs VSD -1 10 0 10 1 10 2 10 A SPP24N60C3 IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%)

11 Avalanche SOA

IAR = f (tAR) par.: Tj ≤ 150 °C 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 µs tAR A IAR Tj(START)=125°C Tj(START)=25°C

12 Avalanche energy

EAS = f (Tj) par.: ID = 10 A, VDD = 50 V 25 50 75 100 °C 150 Tj 0.1 0.2 0.3 0.4 0.5 0.6 0.7 mJ 0.9 EAS

2004-03-02Rev. 2.0 Page 8 SPP24N60C3

13 Drain-source breakdown voltage

V(BR)DSS = f (Tj) -60 -20 20 60 100 °C 180 Tj 540 560 580 600 620 640 660 680 V 720 SPP24N60C3 V(BR)DSS

14 Avalanche power losses

PAR = f (f ) parameter: EAR=1mJ 10 3 10 4 10 5 10 6 Hz f 200 400 600 W 1000 PAR 15 Typ. capacitances C = f (VDS) parameter: VGS=0V, f=1 MHz 0 100 200 300 400 V 600 VDS 0 10 1 10 2 10 3 10 4 10 5 10 pF C Ciss Coss Crss 16 Typ. Coss stored energy Eoss=f(VDS) 0 100 200 300 400 V 600 VDS µJ Eoss

2004-03-02Rev. 2.0 Page 9 SPP24N60C3 Definition of diodes switching characteristics

2004-03-02Rev. 2.0 Page 10 SPP24N60C3 P-TO-220-3-1 A BA0.25 M 2.8 15.38±0.6 2.54 0.75±0.1 ±0.131.27 4.44 B 9.98±0.48 0.05 All metal surfaces tin plated, except area of cut. C ±0.2 10±0.4 3.7 C 0.5±0.1 ±0.95.23 13.5±0.5 Metal surface min. x=7.25, y=12.3 ±0.2 ±0.221.17 ±0.22.51

2004-03-02Rev. 2.0 Page 11 SPP24N60C3 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.