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2013/10/18 Ver.1 Page 1 SPP2311 P-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS The SPP2311 is the P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed.  Drivers : Relays/Solenoids/Lamps/Hammers  Power Supply Converter Circuits  Load/Power Switching Cell Phones, Pagers

FEATURES

PIN CONFIGURATION( SOT-23 )  P-Channel -20V/0.45A,RDS(ON)= 0.65Ω@VGS=-4.5V -20V/0.35A,RDS(ON)= 0.90Ω@VGS=-2.5V -20V/0.25A,RDS(ON)= 1.5Ω@VGS=-1.8V -20V/0.25A,RDS(ON)= 3.0Ω@VGS=-1.5V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  SOT-23 package design PART MARKING

2013/10/18 Ver.1 Page 2 SPP2311 P-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description

1 G Gate

2 S Source

3 D Drain

ORDERING INFORMATION

Part Number Package Part Marking SPP2311S23RGB SOT-23 S11 ※ SPP2311S23RGB : Tape Reel ; Pb – Free, Halogen – Free ABSOULTE MAXIMUM RATINGS (TA=25 Unless otherwise noted)℃ Parameter Symbol Typical Unit Drain-Source V oltage V DSS -30 V Gate –Source V oltage V GSS ±12 V Continuous Drain Current(TJ=150 )℃ T A=25℃ I D -0.45 A Pulsed Drain Current I DM -1.0 A Continuous Source Current(Diode Conduction) I S -0.3 A Power Dissipation T A=25℃ P D 0.15 W Operating Junction Temperature T J -55/150 ℃ Storage Temperature Range T STG -55/150 ℃

2013/10/18 Ver.1 Page 3 SPP2311 P-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS

(TA=25 Unless otherwise noted)℃ Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown V oltage V (BR)DSS VGS=0V ,ID=-250uA -30 V Gate Threshold V oltage V GS(th) VDS=VGS,ID=-250uA -0.35 -1.0 Gate Leakage Current I GSS V DS=0V ,VGS=±12V ±30 uA Zero Gate V oltage Drain Current I DSS VDS=-24V ,VGS=0V -1 uAVDS=-24V ,VGS=0V TJ=55℃ -5 On-State Drain Current I D(on) V DS≤ -4.5V ,VGS =-5V -0.7 A Drain-Source On-Resistance R DS(on) VGS=-4.5V ,ID=-0.45A 550 650 mΩVGS=-2.5V ,ID=-0.35A 750 900 VGS=-1.8V ,ID=-0.25A 1100 1500 VGS=-1.5V ,ID=-0.25A 2200 3000 Forward Transconductance gfs V DS=-10V ,ID=-0.25A 0.4 S Diode Forward V oltage V SD I S=-0.15A,VGS=0V -0.8 -1.2 V Dynamic Total Gate Charge Q g VDS=-10V ,VGS=-4.5V ,ID ≡-0.6A 1.5 2.0 nCGate-Source Charge Q gs 0.3 Gate-Drain Charge Q gd 0.35 Turn-On Time td(on) VDD=-10V ,RL=10Ω , ID≡-0.4A VGEN=-4.5V ,RG=6Ω 5 10 ns tr 15 25 Turn-Off Time td(off) 8 15 tf 1.4 1.8

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2013/10/18 Ver.1 Page 6 SPP2311 P-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS

2013/10/18 Ver.1 Page 7 SPP2311 P-Channel Enhancement Mode MOSFET SOT-23 PACKAGE OUTLINE

2013/10/18 Ver.1 Page 8 SPP2311 P-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any pate nt or patent rights of SYNC Power Corporation. Conditions mentioned in this publication ar e subject to change without notice. This p ublication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2004 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com