SPP20N65C3_09 INFINEON | Alldatasheet
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2009-12-01Rev. 3.1 Page 1 SPP20N65C3, SPA20N65C3 SPI20N65C3 Cool MOS™ Power Transistor V DS 650 V RDS(on) 0.19 Ω ID 20.7 A Feature
- New revolutionary high voltage technology
- Worldwide best RDS(on) in TO 220
- Ultra low gate charge
- Periodic avalanche rated
- Extreme dv/dt rated
- High peak current capability
- Improved transconductance PG-TO262 PG-TO220FP P G-TO220 P-TO220-3-31 1 2 3 Marking 20N65C3 20N65C3 20N65C3 Type Package Ordering Code SPP20N65C3 PG-TO220 Q67040-S4556 SPA20N65C3 PG-TO220FP SP000216362 SPI20N65C3 PG-TO262 Q67040-S4560 Maximum Ratings Parameter Symbol Value Unit SPA Continuous drain current TC = 25 °C TC = 100 °C ID 20.7 13.1 20.71) 13.11) A Pulsed drain current, tp limited by Tjmax ID puls 62.1 62.1 A Avalanche energy, single pulse ID=3.5A, VDD =50V EAS 690 690 mJ Avalanche energy, repetitive tAR limited by Tjmax2) ID=7A, VDD =50V EAR 1 1 Avalanche current, repetitive tAR limited by Tjmax IAR 7 7 A Gate source voltage VGS ±20 ±20 V Gate source voltage AC (f >1Hz) VGS ±30 ±30 Power dissipation, TC = 25°C Ptot 208 34.5 W SPP_I Operating and storage temperature Tj , Tstg -55...+150 °C
2009-12-01Rev. 3.1 Page 2 SPP20N65C3, SPA20N65C3 SPI20N65C3 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope VDS = 480 V, ID = 20.7 A, Tj = 125 °C dv/dt 50 V/ns Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Thermal resistance, junction - case RthJC - - 0.6 K/W Thermal resistance, junction - case, FullPAK RthJC_FP - - 3.6 Thermal resistance, junction - ambient, leaded RthJA - - 62 Thermal resistance, junction - ambient, FullPAK RthJA_FP - - 80 SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) RthJA Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s Tsold - - 260 °C Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Drain-source breakdown voltage V(BR)DSS V GS =0V, ID=0.25mA 650 - - V Drain-Source avalanche breakdown voltage V(BR)DS V GS =0V, ID=7A - 730 - Gate threshold voltage VGS(th) ID=1000µA, VGS=VDS 2.1 3 3.9 Zero gate voltage drain current IDSS V DS =600V, V GS =0V, Tj=25°C Tj=150°C 0.1 100 µA Gate-source leakage current IGSS V GS =20V, V DS =0V - - 100 nA Drain-source on-state resistance RDS(on) V GS =10V, ID=13.1A Tj=25°C Tj=150°C 0.16 0.43 0.19 Ω Gate input resistance R G f=1MHz, open drain - 0.54 -
2009-12-01Rev. 3.1 Page 3 SPP20N65C3, SPA20N65C3 SPI20N65C3
Electrical Characteristics
Parameter Symbol Conditions Values Unit min. typ. max. Transconductance gfs V DS ≥2*ID*RDS(on)max, ID=13.1A - 17.5 - S Input capacitance C iss V GS =0V, VDS =25V, f=1MHz - 2400 - pF Output capacitance C oss - 780 - Reverse transfer capacitanceC rss - 50 - Effective output capacitance,4) energy related Co(er) V GS =0V, V DS =0V to 480V - 83 - Effective output capacitance,5) time related Co(tr) - 160 - Turn-on delay time td(on) V DD =380V, VGS =0/13V, ID=20.7A, R G =3.6Ω, Tj=125 - 10 - ns Rise time tr V DD =380V, VGS =0/13V, ID=20.7A, R G =3.6Ω - 5 - Turn-off delay time td(off) - 67 100 Fall time tf - 4.5 12 Gate Charge Characteristics Gate to source charge Q gs V DD =480V, ID=20.7A - 11 - nC Gate to drain charge Q gd - 33 - Gate charge total Qg V DD =480V, ID=20.7A, V GS =0 to 10V - 87 114 Gate plateau voltage V(plateau) V DD =480V, ID=20.7A - 5.5 - V 1Limited only by maximum temperature 2Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR *f. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 4Co(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% VDSS. 5Co(tr) is a fixed capacitance that gives the same charging time as C oss while VDS is rising from 0 to 80% VDSS.
2009-12-01Rev. 3.1 Page 4 SPP20N65C3, SPA20N65C3 SPI20N65C3 Parameter Symbol Conditions Values Unit min. typ. max. Inverse diode continuous forward current IS TC =25°C - - 20.7 A Inverse diode direct current, pulsed ISM - - 62.1 Inverse diode forward voltage VSD V GS =0V, IF=IS - 1 1.2 V Reverse recovery time trr V R=480V, IF=IS , diF/dt=100A/µs - 500 800 ns Reverse recovery charge Q rr - 11 - µC Peak reverse recovery currentIrrm - 70 - A Peak rate of fall of reverse recovery current dirr/dt Tj=25°C - 1400 - A/µs Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit SPA SPA Rth1 0.00769 0.00769 K/W Cth1 0.0003763 0.0003763 Ws/K Rth2 0.015 0.015 Cth2 0.001411 0.001411 Rth3 0.029 0.029 Cth3 0.001931 0.001931 Rth4 0.114 0.163 Cth4 0.005297 0.005297 Rth5 0.136 0.323 Cth5 0.012 0.008453 Rth6 0.059 2.526 Cth6 0.091 0.412 SPP_I SPP_I External HeatsinkTj Tcase Tamb Cth1 Cth2 Rth1 Rth,n Cth,n Ptot (t)
2009-12-01Rev. 3.1 Page 5 SPP20N65C3, SPA20N65C3 SPI20N65C3
1 Power dissipation
Ptot = f (TC ) 0 20 40 60 80 100 120 °C 160 TC 100 120 140 160 180 200 W 240 SPP20N65C3 Ptot
2 Power dissipation FullPAK
Ptot = f (TC ) 0 20 40 60 80 100 120 °C 160 TC W Ptot
3 Safe operating area
I D = f ( VDS ) parameter : D = 0 , TC =25°C 10 0 10 1 10 2 10 3 V VDS -210 -110 010 110 210 A ID tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC
4 Safe operating area FullPAK
ID = f (VDS ) parameter: D = 0, TC = 25°C 10 0 10 1 10 2 10 3 V VDS -210 -110 010 110 210 A ID tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms DC
2009-12-01Rev. 3.1 Page 6 SPP20N65C3, SPA20N65C3 SPI20N65C3
5 Transient thermal impedance FullPAK
ZthJC = f (tp) parameter: D = tp/t 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 s tp -310 -210 -110 010 110 K/WZthJC D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 6 Typ. output characteristic ID = f (VDS ); Tj=25°C parameter: tp = 10 µs, VGS 0 5 10 15 V 25 VDS A ID 4,5V 5,5V 6,5V 20V 10V 7 Typ. output characteristic ID = f (VDS ); Tj=150°C parameter: tp = 10 µs, VGS 0 2 4 6 8 10 12 14 16 18 20 22 V 25 VDS A ID 4.5V 5.5V 20V 10V 8 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150°C, VGS 0 5 10 15 20 25 30 A 40 ID 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.1 1.2 1.3 Ω 1.5 RDS(on) 4V 4.5V 5.5V 6.5V 20V
2009-12-01Rev. 3.1 Page 7 SPP20N65C3, SPA20N65C3 SPI20N65C3
9 Drain-source on-state resistance
RDS(on) = f (Tj) parameter : ID = 13.1 A, VGS = 10 V -60 -20 20 60 100 °C 180 Tj 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Ω 1.1 SPP20N65C3 RDS(on) typ 98% 10 Typ. transfer characteristics I D= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 10 µs 0 1 2 3 4 5 6 7 V 9 VGS A ID 150°C 25°C
12 Forward characteristics of body diode
I F = f (VSD) parameter: Tj , tp = 10 µs VSD -110 010 110 210 A SPP20N65C3 IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%) 11 Typ. gate charge VGS = f (QGate) parameter: ID = 20.7 A pulsed 0 20 40 60 80 100 nC 140 QGate V SPP20N65C3 VGS 0,8 VDS max DS maxV0,2
2009-12-01Rev. 3.1 Page 8 SPP20N65C3, SPA20N65C3 SPI20N65C3 13 Typ. switching time t = f (ID), inductive load, Tj=125°C par.: VDS =380V, VGS =0/+13V, R G =3.6Ω 0 4 8 12 16 A 24 ID 010 110 210 ns t tr td(off) td(on) tf 14 Typ. switching time t = f ( RG ), inductive load, Tj=125°C par.: VDS =380V, VGS =0/+13V, ID=20.7 A 0 5 10 15 20 25 30 Ω 40 R G 010 110 210 310 ns t td(off) td(on) tr tf 15 Typ. drain current slope di/dt = f(RG ), inductive load, Tj = 125°C par.: VDS =380V, VGS =0/+13V, ID=20.7A 0 5 10 15 20 25 30 Ω 40 R G 500 1000 1500 2000 2500 3000 3500 4000 A/µs 5000 di/dt di/dt(on) di/dt(off) 16 Typ. drain source voltage slope dv/dt = f(R G ), inductive load, Tj = 125°C par.: VDS =380V, VGS =0/+13V, ID=20.7A 0 5 10 15 20 25 30 Ω 40 R G 100 V/ns 150 dv/dt dv/dt(on) dv/dt(off)
2009-12-01Rev. 3.1 Page 9 SPP20N65C3, SPA20N65C3 SPI20N65C3 17 Typ. switching losses E = f (ID), inductive load, Tj=125°C par.: VDS =380V, VGS =0/+13V, R G =3.6Ω 0 3 6 9 12 15 A 21 ID 0.01 0.02 0.03 0.04 0.05 0.06 mWs 0.08 E Eon* Eoff *) Eon includes SPD06S60 diode commutation losses 18 Typ. switching losses E = f(R G ), inductive load, Tj=125°C par.: VDS =380V, VGS =0/+13V,ID=11A 0 5 10 15 20 25 30 Ω 40 R G 0.05 0.1 0.15 0.2 0.25 0.3 mWs 0.4 E Eon* Eoff *) Eon includes SPD06S60 diode commutation losses
19 Avalanche SOA
IAR = f (tAR) par.: Tj≤ 150 °C 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 µs tAR 0.5 1.5 2.5 3.5 4.5 5.5 A IAR Tj(Start)=25°C Tj(Start)=125°C
20 Avalanche energy
E AS = f (Tj) par.: ID = 3.5 A, VDD = 50 V 20 40 60 80 100 120 °C 160 Tj 100 200 300 400 500 mJ 700 EAS
2009-12-01Rev. 3.1 Page 10 SPP20N65C3, SPA20N65C3 SPI20N65C3
22 Avalanche power losses
PAR = f (f ) parameter: EAR =1mJ 10 4 10 5 10 6 Hz f 100 150 200 250 300 350 400 W 500 PAR
21 Drain-source breakdown voltage
V(BR)DSS = f (Tj) -60 -20 20 60 100 °C 180 Tj 585 605 625 645 665 685 705 725 745 V
785 SPP20N65C3
V(BR)DSS 23 Typ. capacitances C = f ( VDS ) parameter: VGS =0V, f=1 MHz 0 100 200 300 400 V 600 VDS 010 110 210 310 410 510 pF C Ciss Coss Crss 24 Typ. C oss stored energy Eoss=f(VDS ) 0 100 200 300 400 V 600 VDS µJ Eoss
2009-12-01Rev. 3.1 Page 11 SPP20N65C3, SPA20N65C3 SPI20N65C3 Definition of diodes switching characteristics
2009-12-01Rev. 3.1 Page 12 SPP20N65C3, SPA20N65C3 SPI20N65C3 PG-TO220-3-1, PG-TO220-3-21
2009-12-01Rev. 3.1 Page 13 SPP20N65C3, SPA20N65C3 SPI20N65C3 PG-TO220-3-31/3-111 Fully isolated package ( 2500 VAC; 1 minute )
2009-12-01Rev. 3.1 Page 14 SPP20N65C3, SPA20N65C3 SPI20N65C3 PG-TO262-3-1, PG-TO262-3-21 (I²-PAK)
2009-12-01Rev. 3.1 Page 15 SPP20N65C3, SPA20N65C3 SPI20N65C3 Published by Infineon Technologies AG
81726 Munich, Germany
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