SPP20N60S5_01 INFINEON | Alldatasheet

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SPB20N60S5Preliminary data Cool MOS™ ====Power Transistor

  • =New revolutionary high voltage technology
  • Worldwide best RDS(on) in TO 220
  • Ultra low gate charge
  • =Improved periodic avalanche rating
  • Extreme dv/dt rated
  • =Optimized capacitances
  • =Improved noise immunity
  • =Former development designation: SPPx1N60S5/SPBx1N60S5 C Power Semiconductors OO LMOS Product Summary VDS @ Tjmax 650 V RDS(on) 0.19 Ω ID 20 A P-TO263-3-2 P-TO220-3-1 G,1 D,2 S,3 Marking 20N60S5 20N60S5 Type Package Ordering Code SPP20N60S5 P-TO220-3-1 Q67040-S4751 SPB20N60S5 P-TO263-3-2 Q67040-S4171 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current TC=25°C TC=100°C ID A Pulsed drain current 1) TC=25°C ID puls 40 Avalanche energy, single pulse ID = 10 A, VDD = 50 V EAS 690 mJ Avalanche energy (repetitive, limited by Tjmax) ID = 20 A, VDD = 50 V EAR 1 Avalanche current (repetitive, limited by Tjmax) IAR 20 A Reverse diode dv/dt IS=20A, VDS<VDSS, di/dt=100A/µs, Tjmax=150°C dv/dt 6 kV/µs Gate source voltage VGS ±20 V Power dissipation TC=25°C Ptot 208 W Operating and storage temperature Tj , Tstg -55... +150 °C

SPB20N60S5Preliminary data Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Thermal Characteristics Thermal resistance, junction - case RthJC - - 0.6 K/W Thermal resistance, junction - ambient (Leaded and through-hole packages) RthJA - - 62 SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 2) RthJA Static Characteristics, at Tj = 25 °C, unless otherwise specified Drain-source breakdown voltage VGS = 0 V, ID = 0.25 mA V(BR)DSS 600 - - V Gate threshold voltage, VGS = VDS ID = 1 mA, Tj = 25 °C VGS(th) 3.5 4.5 5.5 Zero gate voltage drain current, VDS=VDSS VGS = 0 V, Tj = 25 °C VGS = 0 V, Tj = 150 °C IDSS 0.5 250 µA Gate-source leakage current VGS = 20 V, VDS = 0 V IGSS - - 100 nA Drain-source on-state resistance VGS = 10 V, ID = 13 A RDS(on) - 0.16 0.19 Ω 1current limited by Tjmax 2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm² (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air.

SPB20N60S5Preliminary data Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs VDS≥2*ID*RDS(on)max , ID=13A - 12 - S Input capacitance Ciss VGS=0V, VDS=25V, f=1MHz - 3000 - pF Output capacitance Coss - 1170 - Reverse transfer capacitance Crss - 28 - Turn-on delay time td(on) VDD=350V, VGS=10V, ID=20A, RG=5.7Ω - 120 - ns Rise time tr - 25 - Turn-off delay time td(off) - 140 210 Fall time tf - 30 45 Gate Charge Characteristics Gate to source charge Qgs VDD=350V, ID=20A - 21 - nC Gate to drain charge Qgd - 47 - Total gate charge Qg VDD=350V, ID=20A, VGS=0 to 10V - 79 103 Reverse Diode Inverse diode continuous forward current IS TC=25°C - - 20 A Inverse diode direct current,pulsed ISM - - 40 Inverse diode forward voltage VSD VGS=0V, IF=20A - 1 1.2 V Reverse recovery time trr VR=100V, IF=lS, diF/dt=100A/µs - 610 - ns Reverse recovery charge Qrr - 12 - µC

SPB20N60S5Preliminary data Power dissipation Ptot = f (TC) 0 20 40 60 80 100 120 °C 160 TC 100 120 140 160 180 200 W 240 SPP20N60S5 Ptot Drain current ID = f (TC) parameter: VGS≥ 10 V 0 20 40 60 80 100 120 °C 160 TC A SPP20N60S5 ID Safe operating area ID=f (VDS) parameter: D=0.01, TC=25°C 10 0 10 1 10 2 10 3 V VDS -1 10 0 10 1 10 2 10 A SPP20N60S5 ID R DS(on) = V DS / I D DC 10 ms 1 ms 100 µs tp = 11.0µs Transient thermal impedance ZthJC = f (tp) parameter : D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 K/W SPP20N60S5 ZthJC single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50

SPB20N60S5Preliminary data Typ. output characteristic ID = f (VDS) Parameter: VGS, Tj = 25 °C 0 5 10 15 20 V 30 VDS A ID 10V 20V 15V 12V 11V Drain-source on-resistance RDS(on) = f (Tj) parameter : ID = 13 A, VGS = 10 V -60 -20 20 60 100 °C 180 Tj 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Ω 1.1 SPP20N60S5 RDS(on) typ 98% Typ. capacitances C = f (VDS) parameter: VGS=0 V, f=1 MHz 0 10 20 30 40 50 60 70 80 V 100 VDS 0 10 1 10 2 10 3 10 4 10 5 10 pF Ciss Coss Crss Typ. transfer characteristics ID= f ( VGS ) VDS≥ 2 x ID x RDS(on)max 0 2 4 6 8 10 12 14 16 V 20 VGS A ID

SPB20N60S5Preliminary data Avalanche Energy EAS = f (Tj) par.: ID = 10 A, VDD = 50 V 20 40 60 80 100 120 °C 160 Tj 100 150 200 250 300 350 400 450 500 550 600 mJ 750 EAS Avalanche SOA IAR = f (tAR) par.: Tj ≤ 150 °C 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 µs tAR A IAR Tj(START)=25°C Tj(START)=125°C Drain-source breakdown voltage V(BR)DSS = f (Tj) -60 -20 20 60 100 °C 180 Tj 540 560 580 600 620 640 660 680 V 720 SPP20N60S5 V(BR)DSS Gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS, ID = 1 mA -60 -20 20 60 100 °C 180 Tj V VGS(th) typ. max. min.

SPB20N60S5Preliminary data Forward characteristics of reverse diode IF = f (VSD) parameter: Tj , tp = 10 µs VSD -1 10 0 10 1 10 2 10 A SPP20N60S5 IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%) Typ. gate charge VGS = f (QGate) parameter: IDpuls = 20 A 0 20 40 60 80 nC 120 Qg V SPP20N60S5 VGS 0,8 VDS max DS maxV0,2

SPB20N60S5Preliminary data P-TO220-3-1 symbol [mm] [inch] m i nm a xm i nm a x A 9.70 10.30 0.3819 0.4055 B 14.88 15.95 0.5858 0.6280 C 0.65 0.86 0.0256 0.0339 D 3.55 3.89 0.1398 0.1531 E 2.60 3.00 0.1024 0.1181 F 6.00 6.80 0.2362 0.2677 G 13.00 14.00 0.5118 0.5512 H 4.35 4.75 0.1713 0.1870 K 0.38 0.65 0.0150 0.0256 L 0.95 1.32 0.0374 0.0520 M N 4.30 4.50 0.1693 0.1772 P 1.17 1.40 0.0461 0.0551 T 2.30 2.72 0.0906 0.1071 2.54 typ. 0.1 typ. dimensions P-TO220-3-1 TO-263 (D²Pak/P-TO220SMD) symbol [mm] [inch] min max min max A 9.80 10.20 0.3858 0.4016 B 0.70 1.30 0.0276 0.0512 C 1.00 1.60 0.0394 0.0630 D 1.03 1.07 0.0406 0.0421 E F 0.65 0.85 0.0256 0.0335 G H 4.30 4.50 0.1693 0.1772 K 1.17 1.37 0.0461 0.0539 L 9.05 9.45 0.3563 0.3720 M 2.30 2.50 0.0906 0.0984 N P 0.00 0.20 0.0000 0.0079 Q 4.20 5.20 0.1654 0.2047 R S 2.40 3.00 0.0945 0.1181 T 0.40 0.60 0.0157 0.0236 U V W X Y Z 0.3701 0.6358 0.1811 2.54 typ. 5.08 typ. 4.60 9.40 16.15 15 typ. 6.23 1.15 10.80 8° max dimensions 0.4252 0.0453 0.2453 0.1 typ. 0.2 typ. 0.5906 typ. 8° max

SPB20N60S5Preliminary data Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.