SPP18P06PG

SPP18P06PG_10 INFINEON | Alldatasheet

Document overview

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Technical content

Features

• P-Channel
• Enhancement mode
• Avalanche rated
• dv /dt rated 175°C operating temperature Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T A=25 °C A T A=100 °C Pulsed drain current I D,pulse T A=25 °C Avalanche energy, single pulse E AS I D=18.7 A, R GS=25 Ω mJ Avalanche energy, periodic limited by Tjmax E AR 8 Reverse diode dv /dt dv /dt I D=18.7 A, V DS=48 V, di /dt =-200 A/µs, T j,max=175 °C kV/µs Gate source voltage V GS V Power dissipation P tot T A=25 °C1) W Operating and storage temperature T j, T stg °C ESD class Soldering temperature IEC climatic category; DIN IEC 68-1 55/150/56 "-55 ... +175" ±20 260 °C -18.7 -13.2 81.1 Value 151 -74.8 steady state V DS -60 V R DS(on),max 0.13 Ω I D -18.7 A Product Summary Type Package Tape and reel information Marking Lead free SPP18P06PG PG-TO220-3 Yes PG-TO220-3 Rev1.9 page 1 2010-04-12 50pcs / tube 18P06P

Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R thJC - - 1.85 K/W Thermal resistance, junction - ambient, leaded R thJA -- 6 2 SMD version, device on PCB: R thJA minimal footprint - - 62 K/W 6 cm2 cooling area1) -- 4 0 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=-250 µA -60 - - V Gate threshold voltage V GS(th) V DS=V GS, I D=- 1000 µA -2.1 2.7 -4 Zero gate voltage drain current I DSS V DS=-60 V, V GS=0 V, V DS=-60 V, V GS=0 V, T j=150 °C - -10 -100 Gate-source leakage current I GSS V GS=-20 V, V DS=0 V - -10 -100 nA Drain-source on-state resistance R DS(on) V GS=-10 V, I D=-13.2 A - 102 130 mΩ Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=-13.2 A 51 0- S 1) Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Values Rev1.9 page 2 2010-04-12

Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 690 860 pF Output capacitance C oss - 230 290 Reverse transfer capacitance C rss - 95 120 Turn-on delay time t d(on) - 12.0 18.0 ns Rise time t r - 5.8 8.7 Turn-off delay time t d(off) -2 5 3 7 Fall time t f - 11 16.5 Gate Charge Characteristics Gate to source charge Q gs - -4.1 -5.5 nC Gate to drain charge Q gd - -11 -17 Gate charge total Q g - -21 -28 Gate plateau voltage V plateau - -5.94 - V Reverse Diode Diode continuous forward current I S - - 18.60 A Diode pulse current I S,pulse - - -74.8 Diode forward voltage V SD V GS=0 V, I F=-18.6 A, Reverse recovery time t rr - 70 105 ns Reverse recovery charge Q rr - 139 208 nC T A=25 °C Values V GS=0 V, V DS=-25 V, f =1 MHz V DD=-30 V, V GS=- 10 V, I D=-13.2 A, R G=2.7 Ω V DD=-48 V, I D=-

18.6 A, V GS=0 to -10 V

V R=30 V, I F=|I S|, di F/dt =100 A/µs Rev1.9 page 3 2010-04-12

1 Power dissipation 2 Drain current

P tot=f(T A) I D=f(T A); |V GS|≥10 V 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C1); D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 10 µs 100 µs 1 ms 10 ms DC 101 100 10-1 10-2 0.1 1 10 100 -V DS [V] -I D [A] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10210110010-110-210-310-410-5 101 100 10-1 t p [s] Z thJS [K/W] 0 40 80 120 160 T A [°C] P tot [W] 0 40 80 120 160 T A [°C] -I D [A] Rev1.9 page 4 2010-04-12

5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j -7 V -5.5 V -4 V -4.5 V -5 V -6 V -20 V -10 V 160 240 320 400 0 5 10 15 20 25 30 35 -I D [A] R DS(on) [mΩ] 25 °C 125 °C 012345 -V GS [V] -I D [A] 0 5 10 15 20 25 30 -I D [A] g fs [S] -4 V -4.5 V -5 V -5.5 V -6 V -7 V -20 V -10 V 02468 -V DS [V] -I D [A] Rev1.9 page 5 2010-04-12

9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=-13.2 A; V GS=-10 V V GS(th)=f(T j); V GS=V DS; I D=-1000 µA 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j typ. 98 % 100 150 200 250 300 350 -60 -20 20 60 100 140 180 T j [°C] R DS(on) [mΩ] Ciss Coss Crss 103 102 101 0 5 10 15 20 25 -V DS [V] C [pF] typ. min. max. 0.5 1.5 2.5 3.5 -60 -20 20 60 100 140 180 T j [°C] -V GS(th) [V] 25 °C, typ 150 °C, typ 25 °C, 98% 150 °C, 98% 101 100 10-1 0 0.5 1 1.5 2 2.5 3 -V SD [V] I F [A] Rev1.9 page 6 2010-04-12

13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=-18.6 A pulsed parameter: T j(start) parameter: V DD

15 Drain-source breakdown voltage 16 Gate charge waveforms

V BR(DSS)=f(T j); I D=-250 µA -60 -20 20 60 100 140 180 T j [°C] -V BR(DSS) [V] V GS Q gate V gs(t h ) Q g(th) Q gs Q gd Q sw Q g 25 °C 100 °C 125 °C 103102101100 102 101 100 t AV [µs] -I AV [A]

12 V 30 V

Q gate [nC] V GS [V] Rev1.9 page 7 2010-04-12

Rev1.9 page 8 2010-04-12

Rev1.9 page 9 2010-04-12 SPP18P06P G Published by Infineon Technologies AG

81726 Munich, Germany

© 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.