SPP17N80C3

SPP17N80C3_07 INFINEON | Alldatasheet

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Technical content

Rev. 2.6 Page 1 2007-08-30 SPP17N80C3 SPA17N80C3 Cool MOS™ Power Transistor VDS 800 V RDS(on) 0.29 Ω ID 17 A Feature

• New revolutionary high voltage technology
• Worldwide best RDS(on) in TO 220
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
• PG-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) PG-TO220-3-31 PG-TO220 P-TO220-3-31 1 2 3 Marking 17N80C3 17N80C3 Type Package Ordering Code SPP17N80C3 PG-TO220 Q67040-S4353 SPA17N80C3 PG-TO220-3-31 SP000216353 Maximum Ratings Parameter Symbol Value Unit SPA Continuous drain current TC = 25 °C TC = 100 °C ID 171) 111) A Pulsed drain current, tp limited by Tjmax ID puls 51 51 A Avalanche energy, single pulse ID=3.4A, VDD =50V EAS 670 670 mJ Avalanche energy, repetitive tAR limited by Tjmax2) ID=17A, VDD =50V EAR 0.5 0.5 Avalanche current, repetitive tAR limited by Tjmax IAR 17 17 A Gate source voltage VGS ±20 ±20 V Gate source voltage AC (f >1Hz) VGS ±30 ±30 Power dissipation, TC = 25°C Ptot 208 42 W SPP Operating and storage temperature Tj , Tstg -55...+150 °C

Rev. 2.6 Page 2 2007-08-30 SPP17N80C3 SPA17N80C3 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope V DS = 640 V, ID = 17 A, Tj = 125 °C dv/dt 50 V/ns Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Thermal resistance, junction - case RthJC - - 0.6 K/W Thermal resistance, junction - case, FullPAK RthJC_FP - - 3.6 Thermal resistance, junction - ambient, leaded RthJA - - 62 Thermal resistance, junction - ambient, FullPAK RthJA_FP - - 80 SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) RthJA Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s 4) Tsold - - 260 °C Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Drain-source breakdown voltage V(BR)DSS V GS =0V, ID=0.25mA 800 - - V Drain-Source avalanche breakdown voltage V(BR)DS V GS =0V, ID=17A - 870 - Gate threshold voltage VGS(th) ID=1000µA, VGS=VDS 2.1 3 3.9 Zero gate voltage drain current IDSS V DS =800V, V GS =0V, Tj=25°C Tj=150°C 0.5 250 µA Gate-source leakage current IGSS V GS =20V, V DS =0V - - 100 nA Drain-source on-state resistance RDS(on) V GS =10V, ID=11A Tj=25°C Tj=150°C 0.25 0.78 0.29 Ω Gate input resistance R G f=1MHz, open drain - 0.7 -

Rev. 2.6 Page 3 2007-08-30 SPP17N80C3 SPA17N80C3

Electrical Characteristics

Parameter Symbol Conditions Values Unit min. typ. max. Transconductance gfs V DS ≥2*ID*RDS(on)max, ID=11A - 15 - S Input capacitance C iss V GS =0V, VDS =25V, f=1MHz - 2320 - pF Output capacitance C oss - 1250 - Reverse transfer capacitanceC rss - 60 - Effective output capacitance,5) energy related Co(er) V GS =0V, V DS =0V to 480V - 59 - Effective output capacitance,6) time related Co(tr) - 124 - Turn-on delay time td(on) V DD =400V, VGS =0/10V, ID=17A, R G =4.7Ω, Tj=125°C - 25 - ns Rise time tr - 15 - Turn-off delay time td(off) - 72 82 Fall time tf - 6 9 Gate Charge Characteristics Gate to source charge Q gs V DD =640V, ID=17A - 12 - nC Gate to drain charge Q gd - 46 - Gate charge total Qg V DD =640V, ID=17A, V GS =0 to 10V - 91 177 Gate plateau voltage V(plateau) V DD =640V, ID=17A - 6 - V 1Limited only by maximum temperature 2Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR *f. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 4Soldering temperature for TO-263: 220°C, reflow 5Co(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% VDSS. 6Co(tr) is a fixed capacitance that gives the same charging time as C oss while VDS is rising from 0 to 80% VDSS.

Rev. 2.6 Page 4 2007-08-30 SPP17N80C3 SPA17N80C3 Parameter Symbol Conditions Values Unit min. typ. max. Inverse diode continuous forward current IS TC =25°C - - 17 A Inverse diode direct current, pulsed ISM - - 51 Inverse diode forward voltage VSD VGS =0V, IF=IS - 1 1.2 V Reverse recovery time trr VR =400V, IF=IS , diF/dt=100A/µs - 550 - ns Reverse recovery charge Q rr - 15 - µC Peak reverse recovery currentIrrm - 51 - A Peak rate of fall of reverse recovery current dirr/dt Tj=25°C - 1200 - A/µs Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit SPA SPA Rth1 0.00812 0.00812 K/W Cth1 0.0003562 0.0003562 Ws/K Rth2 0.016 0.016 Cth2 0.001337 0.001337 Rth3 0.031 0.031 Cth3 0.001831 0.001831 Rth4 0.114 0.16 Cth4 0.005033 0.005033 Rth5 0.135 0.324 Cth5 0.012 0.008657 Rth6 0.059 2.522 Cth6 0.092 0.412 SPP SPP External HeatsinkTj Tcase Tamb Cth1 Cth2 Rth1 Rth,n Cth,n Ptot (t)

Rev. 2.6 Page 5 2007-08-30 SPP17N80C3 SPA17N80C3

1 Power dissipation

Ptot = f (TC ) 0 20 40 60 80 100 120 °C 160 TC 100 120 140 160 180 200 W 240 SPP17N80C3 Ptot

2 Power dissipation FullPAK

P tot = f (TC ) 0 20 40 60 80 100 120 °C 160 TC W Ptot

3 Safe operating area

I D = f ( VDS ) parameter : D = 0 , TC =25°C 10 0 10 1 10 2 10 3 V VDS -210 -110 010 110 210 A ID tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC

4 Safe operating area FullPAK

ID = f (VDS ) parameter: D = 0, TC = 25°C 10 0 10 1 10 2 10 3 V VDS -210 -110 010 110 210 A ID tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms DC

Rev. 2.6 Page 6 2007-08-30 SPP17N80C3 SPA17N80C3

5 Transient thermal impedance

ZthJC = f (tp) parameter: D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -1 s tp -410 -310 -210 -110 010 110 K/WZthJC D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse

6 Transient thermal impedance FullPAK

ZthJC = f (tp) parameter: D = tp/t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 s tp -410 -310 -210 -110 010 110 K/WZthJC D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 7 Typ. output characteristic ID = f (VDS ); Tj=25°C parameter: tp = 10 µs, VGS 0 5 10 15 20 VDS 30 V A ID 20V 10V 8 Typ. output characteristic ID = f (VDS ); Tj=150°C parameter: tp = 10 µs, VGS 0 5 10 15 20 VDS 30 V A ID 4.5V 5.5V 6.5V 20V 10V

Rev. 2.6 Page 7 2007-08-30 SPP17N80C3 SPA17N80C3 9 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150°C, VGS 0 5 10 15 20 25 A 35 ID 0.5 0.6 0.7 0.8 0.9 1.1 1.2 1.3 Ω 1.5 RDS(on) 4V 4.5V 5V 5.5V 6V 6.5V 10V 20V

10 Drain-source on-state resistance

RDS(on) = f (Tj) parameter : ID = 11 A, VGS = 10 V -60 -20 20 60 100 °C 180 Tj 0.2 0.4 0.6 0.8 1.2 Ω 1.6 SPP17N80C3 RDS(on) typ 98% 11 Typ. transfer characteristics I D= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 10 µs 0 2 4 6 8 10 12 14 16 V 20 VGS A ID 25°C 150°C 12 Typ. gate charge V GS = f (QGate) parameter: ID = 17 A pulsed 0 20 40 60 80 100 120 nC 160 QGate V SPP17N80C3 VGS 0,8 VDS max DS maxV0,2

Rev. 2.6 Page 8 2007-08-30 SPP17N80C3 SPA17N80C3

13 Forward characteristics of body diode

IF = f (VSD) parameter: Tj , tp = 10 µs VSD -110 010 110 210 A SPP17N80C3 IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%)

14 Avalanche SOA

I AR = f (tAR) par.: Tj≤ 150 °C 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 µs tAR A IAR Tj(START)=125°C Tj(START)=25°C

15 Avalanche energy

E AS = f (Tj) par.: ID = 3.4 A, VDD = 50 V 25 50 75 100 °C 150 Tj 100 150 200 250 300 350 400 450 500 550 600 mJ 700 EAS

16 Drain-source breakdown voltage

V (BR)DSS = f (Tj) -60 -20 20 60 100 °C 180 Tj 720 740 760 780 800 820 840 860 880 900 920 940 V 980 SPP17N80C3 V(BR)DSS

Rev. 2.6 Page 9 2007-08-30 SPP17N80C3 SPA17N80C3

17 Avalanche power losses

PAR = f (f ) parameter: EAR =0.5mJ 10 4 10 5 10 6 Hz f 100 150 200 250 300 350 400 W 500 PAR 18 Typ. capacitances C = f (V DS ) parameter: VGS =0V, f=1 MHz 0 100 200 300 400 500 600 V 800 VDS 010 110 210 310 410 510 pF C C iss C oss C rss 19 Typ. C oss stored energy Eoss=f(VDS ) 0 100 200 300 400 500 600 V 800 VDS µJ Eoss

Rev. 2.6 Page 10 2007-08-30 SPP17N80C3 SPA17N80C3 Definition of diodes switching characteristics

2007-08-30Rev. 2.6 Page 11 SPP17N80C3 SPA17N80C3 PG-TO220-3-1, PG-TO220-3-21

2007-08-30Rev. 2.6 Page 12 SPP17N80C3 SPA17N80C3 PG-TO220-3-31 (FullPAK)

Rev. 2.6 Page 13 2007-08-30 SPP17N80C3 SPA17N80C3 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.