SPP16N50C3_07 INFINEON | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 14
Technical content
2007-08-30Rev. 3.0 Page 1 SPP16N50C3 SPI16N50C3, SPA16N50C3 Cool MOS™ Power Transistor VDS @ Tjmax 560 V RDS(on) 0.28 Ω ID 16 A Feature
- New revolutionary high voltage technology
- Ultra low gate charge
- Periodic avalanche rated
- Extreme dv/dt rated
- Ultra low effective capacitances
- Improved transconductance
- PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute) PG-TO220FP PG-TO220PG-TO262 P-TO220-3-1 2 3 P-TO220-3-31 1 2 3 Marking 16N50C3 16N50C3 16N50C3 Type Package Ordering Code SPP16N50C3 PG-TO220 Q67040-S4583 SPI16N50C3 PG-TO262 Q67040-S4582 SPA16N50C3 PG-TO220FP SP000216351 Maximum Ratings Parameter Symbol Value Unit SPP_I SPA Continuous drain current TC = 25 °C TC = 100 °C ID 161) 101) A Pulsed drain current, tp limited by Tjmax ID puls 48 48 A Avalanche energy, single pulse ID=8, VDD=50V EAS 460 460 mJ Avalanche energy, repetitive tAR limited by Tjmax2) ID=16A, VDD=50V EAR 0.64 0.64 Avalanche current, repetitive tAR limited by Tjmax IAR 16 16 A Gate source voltage VGS ±20 ±20 V Gate source voltage AC (f >1Hz) VGS ±30 ±30 Power dissipation, TC = 25°C Ptot 160 34 W Operating and storage temperature Tj , Tstg -55...+150 °C Reverse diode dv/dt dv/dt 15 V/ns
2007-08-30Rev. 3.0 Page 2 SPP16N50C3 SPI16N50C3, SPA16N50C3 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope VDS = 400 V, ID = 16 A, Tj = 125 °C dv/dt 50 V/ns Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Thermal resistance, junction - case RthJC - - 0.78 K/W Thermal resistance, junction - case, FullPAK RthJC_FP - - 3.7 Thermal resistance, junction - ambient, leaded RthJA - - 62 Thermal resistance, junction - ambient, FullPAK RthJA FP - - 80 Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s3) Tsold - - 260 °C Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 500 - - V Drain-Source avalanche breakdown voltage V(BR)DS VGS=0V, ID=16A - 600 - Gate threshold voltage VGS(th) ID=675µA, VGS=VDS 2.1 3 3.9 Zero gate voltage drain current IDSS VDS=500V, VGS=0V, Tj=25°C Tj=150°C 0.1 100 µA Gate-source leakage current IGSS VGS=20V, VDS=0V - - 100 nA Drain-source on-state resistance RDS(on) VGS=10V, ID=10A Tj=25°C Tj=150°C 0.25 0.68 0.28 Ω Gate input resistance RG f=1MHz, open drain - 1.5 -
2007-08-30Rev. 3.0 Page 3 SPP16N50C3 SPI16N50C3, SPA16N50C3 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Characteristics Transconductance gfs VDS≥2*ID*RDS(on)max, ID=10A - 14 - S Input capacitance Ciss VGS=0V, VDS=25V, f=1MHz - 1600 - pF Output capacitance Coss - 800 - Reverse transfer capacitance Crss - 30 - Effective output capacitance,4) energy related Co(er) VGS=0V, VDS=0V to 400V - 64 - Effective output capacitance,5) time related Co(tr) - 124 - Turn-on delay time td(on) VDD=380V, VGS=0/10V, ID=16A, RG=4.3Ω - 10 - ns Rise time tr - 8 - Turn-off delay time td(off) - 50 - Fall time tf - 8 - Gate Charge Characteristics Gate to source charge Qgs VDD=380V, ID=16A - 7 - nC Gate to drain charge Qgd - 36 - Gate charge total Qg VDD=380V, ID=16A, VGS=0 to 10V - 66 - Gate plateau voltage V(plateau) VDD=380V, ID=16A - 5 - V 1Limited only by maximum temperature 2Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f. 3Soldering temperature for TO-263: 220°C, reflow 4Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. 5Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 6ISD<=ID, di/dt<=400A/us, VDClink=400V, Vpeak<VBR, DSS, Tj<Tj,max. Identical low-side and high-side switch.
2007-08-30Rev. 3.0 Page 4 SPP16N50C3 SPI16N50C3, SPA16N50C3
Electrical Characteristics
Parameter Symbol Conditions Values Unit min. typ. max. Inverse diode continuous forward current IS TC=25°C - - 16 A Inverse diode direct current, pulsed ISM - - 48 Inverse diode forward voltage VSD VGS=0V, IF=IS - 1 1.2 V Reverse recovery time trr VR=380V, IF=IS , diF/dt=100A/µs - 420 - ns Reverse recovery charge Qrr - 7 - µC Peak reverse recovery current Irrm - 40 - A Peak rate of fall of reverse recovery current dirr/dt Tj=25°C - 1100 - A/µs Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit SPP_I SPA SPP_I SPA Rth1 0.012 0.012 K/W Cth1 0.0002495 0.0002495 Ws/K Rth2 0.023 0.023 Cth2 0.0009406 0.0009406 Rth3 0.043 0.043 Cth3 0.001298 0.001298 Rth4 0.149 0.176 Cth4 0.00362 0.00362 Rth5 0.17 0.371 Cth5 0.009484 0.008025 Rth6 0.069 2.522 Cth6 0.077 0.412 External HeatsinkTj Tcase Tamb Cth1 Cth2 Rth1 Rth,n Cth,n Ptot (t)
2007-08-30Rev. 3.0 Page 5 SPP16N50C3 SPI16N50C3, SPA16N50C3
1 Power dissipation
Ptot = f (TC) 0 20 40 60 80 100 120 °C 160 TC 100 120 140 W 170 SPP16N50C3 Ptot
2 Power dissipation FullPAK
P tot = f (TC) 0 20 40 60 80 100 120 °C 160 TC W Ptot
3 Safe operating area
I D = f ( VDS ) parameter : D = 0 , TC=25°C 10 0 10 1 10 2 10 3 V VDS -210 -110 010 110 210 A ID tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC
4 Safe operating area FullPAK
ID = f (VDS) parameter: D = 0, TC = 25°C 10 0 10 1 10 2 10 3 V VDS -210 -110 010 110 210 A ID tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms DC
2007-08-30Rev. 3.0 Page 6 SPP16N50C3 SPI16N50C3, SPA16N50C3
5 Transient thermal impedance
ZthJC = f (tp) parameter: D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -1 s tp -410 -310 -210 -110 010 110 K/WZthJC D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse
6 Transient thermal impedance FullPAK
ZthJC = f (tp) parameter: D = tp/t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 s tp -410 -310 -210 -110 010 110 K/WZthJC D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 7 Typ. output characteristic ID = f (VDS); Tj=25°C parameter: tp = 10 µs, VGS 0 5 10 15 V 25 VDS A ID 4.5V 5.5V 20V 6.5V 8 Typ. output characteristic ID = f (VDS); Tj=150°C parameter: tp = 10 µs, VGS 0 5 10 15 V 25 VDS A ID 4.5V 20V
2007-08-30Rev. 3.0 Page 7 SPP16N50C3 SPI16N50C3, SPA16N50C3 9 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150°C, VGS 0 5 10 15 20 A 30 ID 0.4 0.8 1.2 Ω RDS(on) 6V5V4.5V4V 20V
10 Drain-source on-state resistance
RDS(on) = f (Tj) parameter : ID = 10 A, VGS = 10 V -60 -20 20 60 100 °C 180 Tj 0.2 0.4 0.6 0.8 1.2 Ω 1.6 SPP16N50C3 RDS(on) typ 98% 11 Typ. transfer characteristics I D= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 10 µs 0 1 2 3 4 5 6 7 8 V 10 VGS A ID Tj = 25°C Tj = 150°C 12 Typ. gate charge V GS = f (QGate) parameter: ID = 16 A pulsed 0 10 20 30 40 50 60 70 80 nC 100 QGate V SPP16N50C3 VGS 0,8 VDS max DS maxV0,2
2007-08-30Rev. 3.0 Page 8 SPP16N50C3 SPI16N50C3, SPA16N50C3
13 Forward characteristics of body diode
IF = f (VSD) parameter: Tj , tp = 10 µs VSD -110 010 110 210 A SPP16N50C3 IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%)
14 Avalanche SOA
I AR = f (tAR) par.: Tj ≤ 150 °C 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 µs tAR A IAR Tj(start) = 25°C Tj(start) = 125°C
15 Avalanche energy
E AS = f (Tj) par.: ID = 8 , VDD = 50 V 20 40 60 80 100 120 °C 160 Tj 0.1 0.2 0.3 mJ 0.5 EAS
16 Drain-source breakdown voltage
V (BR)DSS = f (Tj) -60 -20 20 60 100 °C 180 Tj 450 460 470 480 490 500 510 520 530 540 550 560 570 V 600 SPP16N50C3 V(BR)DSS
2007-08-30Rev. 3.0 Page 9 SPP16N50C3 SPI16N50C3, SPA16N50C3
17 Avalanche power losses
PAR = f (f ) parameter: EAR=0.64mJ 10 2 10 3 10 4 10 5 10 6 Hz f 100 150 200 250 300 350 W 450 PAR 18 Typ. capacitances C = f (V DS) parameter: VGS=0V, f=1 MHz 0 100 200 300 V 500 VDS 010 110 210 310 410 pF C Crss Ciss Coss 19 Typ. Coss stored energy Eoss=f(VDS) 0 100 200 300 V 500 VDS µJ Eoss
2007-08-30Rev. 3.0 Page 10 SPP16N50C3 SPI16N50C3, SPA16N50C3 Definition of diodes switching characteristics
2007-08-30Rev. 3.0 Page 11 SPP16N50C3 SPI16N50C3, SPA16N50C3 PG-TO220-3-1, PG-TO220-3-21
2007-08-30Rev. 3.0 Page 12 SPP16N50C3 SPI16N50C3, SPA16N50C3 PG-TO220-3-31/-3-111: Outline/Fully isolated package (2500VAC; 1 minute)
2007-08-30Rev. 3.0 Page 13 SPP16N5 0C3 SPI16N50C3, SPA16N50C3 PG-TO262-3-1, PG-TO262-3-21 (I²-PAK)
2007-08-30Rev. 3.0 Page 14 SPP16N50C3 SPI16N50C3, SPA16N50C3 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.