SPP15P10P_09 INFINEON | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 10
Technical content
Features
- P-Channel
- Enhancement mode
- Normal level
- Avalanche rated
- Pb-free lead plating; RoHS compliant Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T C=25 °C A T C=100 °C Pulsed drain current I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=-15 A, R GS=25 Ω mJ Gate source voltage V GS V Power dissipation P tot T C=25 °C W Operating and storage temperature T j, T stg °C ESD Class Soldering temperature IEC climatic category; DIN IEC 68-1 -15 -10.6 128 Value 230 -60 55/175/56 -55 ... 175 ±20 260 °C 1C (1kV to 2kV) V DS -100 V R DS(on),max 0.24 Ω I D -15 A Product Summary PG-TO252-3 PG-TO220-3 Type Package Marking Lead free Packing SPP15P10P G PG-TO220-3 15P10P Yes Non dry SPD15P10P G PG-TO252-3 15P10P Yes Non dry Rev 1.6 page 1 2009-08-25
Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - soldering point R thJC - - 1.17 K/W Thermal resistance, junction - ambient R thJA minimal footprint, steady state -- 7 5 6 cm 2 cooling area1), steady state -- 4 5 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=-1 mA -100 - - V Gate threshold voltage V GS(th) V DS=V GS, I D=- 1.54 mA -4 -3 -2.1 Zero gate voltage drain current I DSS V DS=-100 V, V GS=0 V, V DS=-100 V, V GS=0 V, T j=150 °C - -10 -100 Gate-source leakage current I GSS V GS=-20 V, V DS=0 V - -10 -100 nA Drain-source on-state resistance R DS(on) V GS=-10 V, I D=-10.6 A - 160 240 mΩ Transconductance g fs |V DS|>2|I D|R DS(on)max, 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Values Rev 1.6 page 2 2009-08-25
Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 961 1280 pF Output capacitance C oss - 237 315 Reverse transfer capacitance C rss - 100 150 Turn-on delay time t d(on) - 9.5 15.9 ns Rise time t r -2 3 3 3 Turn-off delay time t d(off) -3 3 4 3 Fall time t f -1 6 2 0 Gate Charge Characteristics2) Gate to source charge Q gs - 5.4 7.2 nC Gate to drain charge Q gd -1 8 2 7 Gate charge total Q g -3 7 4 8 Gate plateau voltage V plateau - 5.9 - V Reverse Diode Diode continuous forward current I S - - -15 A Diode pulse current I S,pulse -- 6 0 Diode forward voltage V SD V GS=0 V, I F=-15 A, Reverse recovery time t rr - 100 150 ns Reverse recovery charge Q rr - 419 628 nC 2) See figure 16 for gate charge parameter definition T C=25 °C Values V GS=0 V, V DS=-25 V, f =1 MHz V DD=-50 V, V GS=-10 V, I D=-15 A, R G=6 Ω V DD=-80 V, I D=-15 A, V GS=0 to -10 V V R=50 V, I F=|I S|, di F/dt =100 A/µs Rev 1.6 page 3 2009-08-25
1 Power dissipation 2 Drain current
P tot=f(T C) I D=f(T C); |V GS|≥10 V 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 1 µs 100 µs 1 ms 10 ms DC 103102101100 102 101 100 10-1 -V DS [V] -I D [A] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10010-110-210-310-410-5 101 100 10-1 10-2 t p [s] Z thJS [K/W] 100 120 140 0 40 80 120 160 T C [°C] P tot [W] 0 40 80 120 160 T C [°C] -I D [A] Rev 1.6 page 4 2009-08-25
5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j -4 V -4.5 V -5 V -6 V -7 V -8 V -10 V 100 200 300 400 500 01 0 2 0 3 0 -I D [A] R DS(on) [mΩ ] 25 °C 125 °C 1357 -V GS [V] -I D [A] 0 5 10 15 20 25 30 -I D [A] g fs [S] -4 V -4.5 V -5 V -6 V -7 V -8 V -10 V 02468 1 0 -V DS [V] -I D [A] Rev 1.6 page 5 2009-08-25
9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=-10.6 A; V GS=-10 V V GS(th)=f(T j); V GS=V DS; I D=-1.54 mA 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j typ. 98 % 100 200 300 400 500 -60 -20 20 60 100 140 180 T j [°C] R DS(on) [mΩ ] Ciss Coss Crss 103 102 101 0 2 04 06 08 0 -V DS [V] C [pF] typ. min. max. -60 -20 20 60 100 140 180 T j [°C] -V GS(th) [V] 25 °C, typ 175 °C, typ 25 °C, 98% 175 °C, 98% 102 101 100 10-1 10-2 0 0.5 1 1.5 -V SD [V] I F [A] Rev 1.6 page 6 2009-08-25
13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=-15 A pulsed parameter: T j(start) parameter: V DD
15 Drain-source breakdown voltage 16 Gate charge waveforms
V BR(DSS)=f(T j); I D=-1mA 100 105 110 115 120 -60 -20 20 60 100 140 180 T j [°C] -V BR(DSS) [V] V GS Q gate V gs(t h ) Q g(th) Q gs Q gd Q sw Q g 25 °C 100 °C 125 °C 103102101100 101 100 10-1 t AV [µs] -I AV [A] 20 V 50 V 80 V 0 1 02 03 04 0 - Qgate [nC] - VGS [V] Rev 1.6 page 7 2009-08-25
Package Outline: PG-TO-252-3 Rev 1.6 page 8 2009-08-25
PG-TO220-3: Outline Rev 1.6 page 9 2009-08-25
Rev 1.6 page 10 2009-08-25 SPP15P10P G SPD15P10P G